• 제목/요약/키워드: $BaTiO_3$ film

검색결과 290건 처리시간 0.026초

PZT/BT 이종박막의 특성 (The Characteristic of PZT/BT Heterolayered films)

  • 이상헌;남성필;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.260-261
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    • 2005
  • The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

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p-Si 기판에 성장한 BaTiO3 박막의 두께와 구조적 특성과의 관계 (Relationship between Thin Film Thickness and Structural Properties of BaTiO3 Thin Films Grown on p-Si Substrates)

  • 민기득;이종원;김선진
    • 한국재료학회지
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    • 제23권6호
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    • pp.334-338
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    • 2013
  • In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of $BaTiO_3$ thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of $BaTiO_3$ thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from $700^{\circ}C$. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/$BaTiO_3$ are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of $BaTiO_3$ thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed $BaTiO_3$ thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.

BaTiO3-Poly Vinylidene Fluoride 복합 압전발전기의 출력특성에 미치는 배합비와 분극의 효과 (Effects of Mixing Ratio and Poling on Output Characteristics of BaTiO3-Poly Vinylidene Fluoride Composite Piezoelectric Generators)

  • 김희태;박상식
    • 한국재료학회지
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    • 제33권12호
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    • pp.517-524
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    • 2023
  • BaTiO3-Poly vinylidene fluoride (PVDF) solution was prepared by adding 0~25 wt% BaTiO3 nanopowder and 10 wt% PVDF powder in solvent. BaTiO3-PVDF film was fabricated by spreading the solution on a glass with a doctor blade. The output performance increased with increasing BaTiO3 concentration. When the BaTiO3 concentration was 20 wt%, the output voltage and current were 4.98 V and 1.03 ㎂ at an applied force of 100 N. However, they decreased when the over 20 wt% BaTiO3 powder was added, due to the aggregation of particles. To enhance the output performance, the generator was poled with an electric field of 150~250 kV/cm at 100 ℃ for 12 h. The output performance increased with increasing electric field. The output voltage and current were 7.87 V and 2.5 ㎂ when poled with a 200 kV/cm electric field. This result seems likely to be caused by the c-axis alignment of the BaTiO3 after poling treatment. XRD patterns of the poled BaTiO3-PVDF films showed that the intensity of the (002) peak increased under high electric field. However, when the generator was poled with 250 kV/cm, the output performance of the generator degraded due to breakdown of the BaTiO3-PVDF film. When the generator was matched with 800 Ω resistance, the power density of the generator reached 1.74 mW/m2. The generator was able to charge a 10 ㎌ capacitor up to 1.11 V and turn on 10 red LEDs.

새로운 방법으로 제조된 적층구조 $BaTiO_3$ 박막의 전기적 특성에 관한 연구 (Study on the electric properties of layered $BaTiO_3$ films prepared new stacking method)

  • 송만호;이윤희;한택상;오명환;윤기현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1129-1132
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    • 1995
  • In the preparation of the layered $BaTiO_3$ thin films with high performance, the new stacking method using the continuous cooling of the substrate was introduced. Amorphous/polycrystalline $BaTiO_3$ layered structure was confirmed by SEM and index of refraction. The layered $BaTiO_3$ thin films formed by the new stacking method showed such a high dielectric constant that the layered structure could not be explained by a stacking structure of the two defined layers but could only be explained by multi-layered structure, i.e. amorphous/micro crystalline/polycrystalline structure. The layered $BaTiO_3$ thin film with a thickness of 240 nm showed higher capacitance per unit area and breakdown strength than the double layered $BaTiO_3$ thin film prepared by the conventional stacking method. And well defined ferroelectric hysteresis leer was observed in the layered $BaTiO_3$ thin film with a thickness of 200 nm.

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$CeO_2$/$BaTiO_3$이중완충막을 이용한 YBCO 박막 제작 (Fabrication of YBCO Superconducting Film with $CeO_2$/$BaTiO_3$Double Buffer Layer)

  • 김성민;이상렬
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.959-962
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    • 2000
  • We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1${\mu}{\textrm}{m}$. When BaTiO$_3$ is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4$\times$10$^4$ A/$\textrm{cm}^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

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연마제 첨가를 통한 BTO Film의 CMP (CMP of BTO Thin Films using Mixed Abrasive slurry)

  • 김병인;이기상;박정기;정창수;강용철;차인수;정판검;신성헌;고필주;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.101-102
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    • 2006
  • BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant, It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the sell-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS). respectively. The removal rate of BTO thin film using the $BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%.

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적층구조 $BaTiO_3$ 박막의 전기적 특성 (Electrical properties of layered $BaTiO_3$ thin film)

  • 송만호;윤기현
    • 한국세라믹학회지
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    • 제34권2호
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    • pp.181-187
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    • 1997
  • 다결정 BaTiO3 박막의 높은 유전상수와 비정질 BaTiO3 박막의 우수한 절연특성을 함께 지닌 적층구조 BaTiO3 박막을 제조하여 적층방법에 따른 전기적 특성을 비교, 평가하였다. BaTiO3 박막은 ITO 투명전전막이 입혀진 유리기판위에 rf=magnetron sputtering방법으로 형성하였으며 적층구조 BaTiO3박막의 제조에는 다결정 BaTiO3 박막의 상부에 기판의 자연 냉각과정중에 비정질층이 형성되는 새로운 적층방법을 사용하였다. 이와같이 제조된 적층박막은 다결정 BaTiO3 박막의 상부에 상온에서 비정질층을 형성시키는 일반적인 적층방법으로 제조한 적층박막에 비하여 높은 단위면적당 정전용량과 유전상수, 우수한 절연특성을 나타내었다. 일반적인 적층방법에 의하여 이중층 구조가 형성되는 반면, 새로운 적층방법으로 제조된 적층박막은 AES depth profile과 전기적 특성 분석을 통하여 비정질/microcrystalline/다결정 구조의 다층구조를 지닌 것으로 확인되었다.

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Crystal structure of the epitaxial $BaTiO_{3}$ thin film on the MgO (100) substrate prepared by the coating-pyrolysis process

  • Kim, S.;Kwon, O.Y.;Choi, S.W.;Manabe, T.;Yamaguchi, I.;Kumagai, T.;Mizuta, S.
    • 한국결정성장학회지
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    • 제10권6호
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    • pp.378-380
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    • 2000
  • The epitaxial $BaTiO_{3}$ thin film was prepared on the MgO substrate by the coating-pyrolysis process using a mixed solution of Ba-naphthenate and Ti-naphthenate. The crystal structure of the epitaxial $BaTiO_{3}$ thin film was characterized by XRD ${\theta}/2{\theta}$ scan and asymmetric {303} rocking curve scan. The epitaxial $BaTiO_{3}$ thin film had the cubic phase with the lattice parameter of a = c = 0.4018 nm.

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스크린 프린팅 기법으로 제작된 ZnBO 첨가 (Ba,Sr)TiO3 Planner Capacitor 특성 분석 (Screen Printed ZnBO Doped (Ba,Sr)TiO3 Thick Film Planner Capacitors)

  • 문상호;고중혁
    • 한국전기전자재료학회논문지
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    • 제22권9호
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    • pp.724-727
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    • 2009
  • We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.

다결정 및 다층구조 $BaTiO_3$ 박막의 Time-Dependent Dielectric Breakdown 특성 (Time-Dependent Dielectric Breakdown of a Polycrystalline and a Multilayered $BaTiO_3$ Thin Films)

  • 오정훈;송만호;이윤희;박창엽;오명환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1526-1528
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    • 1996
  • The dielectric reliability of a polycrystalline and a multilayered $BaTiO_3$ thin films was evaluated using a time-zero dielectric breakdown (TZDB) and a time-dependent dielectric breakdown (TDDB) techniques. The $BaTiO_3$ thin films were prepared by rf-magnetron sputtering technique on ITO-coated glass substrates. In case of the multilayered $BaTiO_3$ thin film, the dielectric breakdown histogram, which was obtained from the TZDB measurements, showed a typical Weibull distribution. While in case of polycrystalIine $BaTiO_3$ thin film, a randomly distributed dielectric breakdown histogram was observed. The TDDB results of the multilayered $BaTiO_3$ thin film guaranteed about $10^5$ hours-operation under the stress field of 1 MV/cm.

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