• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.49-52
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• 2009

Barium strontium calcium titanate powders were prepared with the sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. Then we investigated the structural and dielectric properties of the BSCT thick films at different sintering temperatures. The thermal analysis showed that the BSCT polycrystalline perovskite phase formed at around $660^{\circ}C$. The X-ray diffraction analysis showed a cubic perovskite structure with no second phase present in all of the BSCT thick films. The average grain size and the thickness of the specimens sintered at $1450^{\circ}C$ were about $1.6{\mu}m$ and $45{\mu}m$, respectively. The relative dielectric constant increased and the dielectric loss decreased as the sintering temperature was increased; for BSCT thick films sintered at $1450^{\circ}C$ the values of the dielectric constant and the dielectric loss were 5641 and 0.4%, respectively, at 1 kHz.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.679-684
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• 1998

Dielectricand pyroelectric properties of {{{{ { { {Ba }_{0.67 }Sr }_{0.33 } }`TiO_{3 } ^{ } }} (BST) thin plates and films were investigated. For BST thin plates maximum dielectric constant and pyrolelectric coefficient were observed at around 24$^{\circ}C$ and pyroelectric characteristics were improved as applied bias field was increased. When the electric field of 4kV/cm was applied to the thin plates sintered at 140$0^{\circ}C$ the pyroelectric coefficients over 4$\times$10-7C/{{{{ { cm}^{2 }K }} were obtained in the range of 0-4$0^{\circ}C$ BST thin films deposited using rf magnetron sputtering showed [001] preferred orientation at substrate temperatures above 50$0^{\circ}C$ On the contrary to the thin plates the dielectric constants of the thin films gradually increased above 15$^{\circ}C$ and decreased as applied bias field in-creased. The pyroelectric coefficients of thin films were lower than 1/10 those of thin plates.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.56-64
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• 1996

A large amount of papers about the cubic-to-tetragonal phase transition the ferroelectric domain structures of the BaTiO3 were already reported but there exist still some needs to observe the domain behaviors directly. In this study the domain structures of the tinned plates prepared from ta single crystal grown by the TSSG technique were observed using a polarizing microscope TE and X-ray topography. The spatial relation be-tween the orientation states of domains was investigated and the effects of external stresses and electric fields on the behaviors of ferroelectric and ferroelastic domains were studied. All the 90$^{\circ}$walls cut off in the crystal are the wedge shaped lamellar domains and all the straight boundaries in the observed domain patte군 can be interpreted as the head-to-tail 90$^{\circ}$walls. The irregular overlapped boundaries commonly observed by using a polarizing microscope and X-ray topography are complex combinations of well-known 90$^{\circ}$walls and are domain walls were predominant and were stabilized after surface polishing. In the paraelectric phase region the domain walls vanished but the residual surface strain patterns could be seen at the same positions of the stabilized 90$^{\circ}$a-a walls in the tetragonal phase region, These stabilized walls resulted from the surface strain had a memory effect in domain formation during the repeated phase transitions and could notr be affected by an external electtric field.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.61-63
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• 2004

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as acceptors and sintered $1250^{\circ}C$/2hrs. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $Bi_2O_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength was lowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.529-537
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• 1994

The principle of the Isothermal Capacitance Transient Spectroscopy[ICTS] were explained to measure the electronic trap levels in oxide ceramics. The measurement apparatus and the theory of the ICTS were described in detail. The trap energy evaluation was performed for the ZnO varistor and BaTiO3 ceramics. The grain boundary interface trap levels were detected at -5$0^{\circ}C$~6$0^{\circ}C$ in the case of ZnO varistor and PTCR samples, and the bulk trap levels were detected at 2$0^{\circ}C$~60~ in BaTiO3. The trap energy levels of the above samples could be directly determined by ICTS measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.271-271
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• 2010

$BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.150-150
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.19-21
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• 1993

The perovskite type ferroelectrics has been studied to make a flim out of ceramic capacitor with large capacity and miniaturization. In this study. we make a capacitor in small size and high capacity, and measure SEM and dielectric permitivity of BCTM ceramic capacitor.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.68.2-68
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• 2002

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.516-521
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• 2022

We investigated the microstructure, crystal structure, dielectric, and elecromechanical strain properties of lead-free BaTiO₃ (BT)-modified (Bi_1/2Na_1/2)TiO₃-SrTiO₃ (BNT-ST) piezoelectric ceramics. Samples were prepared by a conventional ceramic processing route. Temperature dependent dielectric properties confirmed that a phase transition from a nonergodic relaxor to an ergodic relaxor was induced when the BT concentration reached 1.5 mol%, interestingly, where the average grain size reached a maximum value of 4.5 ㎛. At the same time, enhanced electromechanical strain (S_max/E_max = 600 pm/V) was obtained. It is suggested that the induced ferroelectric-relaxor phase transition by the BT modification is responsible for the enhancement of electromechanical strain in 1.5 mol% BT-modified BNT-ST ceramics.