• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.335-338
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• 1998

The effect of glass flit addition on microwave dielectric properties of BaTiO$_3$-3TiO$_2$ ceramic was studied. Addition of glass frit to this system obtained sintered sample below sintering temperature 105$0^{\circ}C$. At BaTiO$_3$-3TiO$_2$+ g1ass frit 3wt% + BaWO$_4$6 wt%m, this ceramic showed excellent microwave properties of dielectric constant 34, Q$\times$f 8,100, temperature coefficient of resonant frequency 4 ppm/$^{\circ}C$ .

• 한국세라믹학회지
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• 제33권7호
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• pp.743-754
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• 1996

In this study (Ba1-xPbx)TiO3 was synthesized by modified oxalate process in order to prevent vaporization of PbO through low temperature synthesis climinate Cl ion reproducibly substitute Pb for by and uniformly distribute ion (Ba1-xPbx)TiO3 was synthesized by coprecipitation of lead acetate barium acetate and ammonium titanyl oxalate have been used as starting materials. The substitution of Pb for Ba was reproducibly possible synthetic temperature of perovskite structure becomes lowed as the Pb concentration increases and fine partic-les (specific surface are :7.2 cm2/g) were obtained, BaTiO3 powders calcined at 90$0^{\circ}C$ for 3 hours were cubic from in XRD analysis and as Pb content was increases evident split of tetragonal peaks could be observed The optimum conditions to synthesize (Ba,Pb)TiO3 powder are the followings ; synthesis temperature (5$^{\circ}C$)

• 한국세라믹학회지
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• 제46권2호
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• pp.200-210
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• 2009

It is necessary to minimize the mismatch of sintering shrinkage between dielectric ceramic and Ni inner electrode layers for the purpose of developing the ultra high-capacity multi layered ceramic condenser(MLCC). Thus, low temperature sintering of dielectric $BaTiO_3$ ceramic should be precedently investigated. In this work, the influence of the milling condition on sintering behavior and electrical properties of $BaTiO_3$ ceramics was investigated in the $BaTiO_3$(BT)-Mg-Dy-Mn-Ba system with borosilicate glass as a sintering agent. As milling time increased, specific surface area(SSA) of the powder increased linearly, while both sinterability and dielectric property were found to be drastically decreased with an increasing SSA. It was also revealed that the sinterability of the excessively milled $BaTiO_3$ ceramics could be recovered by increasing Ba content, rather than increasing glass addition. These results suggest that the sintering behavior of $BaTiO_3$ ceramics under the high SSA was more strongly dependent on the transient liquid phase caused by Ba addition, than the liquid phase from additional glass.

• 한국세라믹학회지
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• 제48권6호
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• pp.525-530
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• 2011

We investigated the electrical properties the starting material and sintering condition on the laminated PTC thermistor for micro circuit protection. The influences of $BaTiO_3$ powder with the 0.3 and 0.45 ${\mu}m$ size and the electrical characteristics (Ba,Sr)$TiO_3$ sintered at 1350~1400$^{\circ}C$ for 2 h in a reducing atmosphere (1% $H_2/N_2$). The sintered (Ba,Sr)$TiO_3$ was increased pore and the grain size was decreased according to increasing Sr additions. In relative permittivity, the phase transition temperature of (Ba,Sr)$TiO_3$ was decreased for 2.5$^{\circ}C$ according to increasing 0.01 mole Sr additions, and the phase transition dose not appeared about 0.3 mole Sr addition. The (Ba,Sr)$TiO_3$ was show the low resistance from 0.01 mole to 0.05 mole by Sr addition, regardless of sintering temperature. The (Ba,Sr)$TiO_3$ was show $10^2$ jump order at 0.1 and 0.2 mole Sr addition, and PTCR of the sintered $(Ba_{0.7}Sr_{0.3})TiO_3$ does not appeared about 0.3 mole Sr addition, regardless of the sintering temperature and starting material size.

• 한국세라믹학회지
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• 제34권4호
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• 한국세라믹학회지
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• 제33권2호
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• pp.183-191
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• 1996

For the fabrication of semiconducting BaTiO3 ceramics at lower sintering temperature BN was selected as a sintering aid and the microsturcture of semiconducting BaTiO3 ceramics and PTCR characteristics by their microstructural changes were investigated. by adding BN to 0.1 mol% Sb2O3-doped BaTiO3 ceramics the sintering temperature showing semiconducting BaTiO3 ceramics was reduced by 16$0^{\circ}C$ from 130$0^{\circ}C$ to 114$0^{\circ}C$ and the specific resistivity ratio was increased as the amount of BN was increased.

• 한국세라믹학회지
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• 제32권7호
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.165-170
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• 2004

MLCC의 주재료인 $BaTiO_3$는 금속전극의 산화를 방지하기 위해 환원분위기에서 소결하는데 이는 비화학양론적 조성 및 전기적 성질, 결함 그리고 상의 변화를 가져온다. 본 연구에서는 상의 변화를 다양한 온도 범위에서 BaO 또는 $TiO_2$를 첨가시킨 $BaTiO_3$ powder을 가지고 급냉시킨 후 이를 X-선 회절 분석을 통하여 이들의 이차상 형성 여부 등을 조사하였다. $1320^{\circ}C$에서는 $TiO_2$의 고용도가 BaO의 고용도에 비해 상당히 큰 값을 가짐을 알 수 있었다. 이런 결과를 바탕으로 Ba/Ti 비, 산소분압 및 온도에 따른 $BaTiO_3$의 전기전도도 거동에 의하면, 고용범위내에서 BaO 첨가량이 증가할수록 전기전도도의 최소점은 낮은 산소분압쪽으로 이동함을 관찰하였으며 이는 $Ti^{4+}$빈자리에 따른 산소빈자리가 형성되는 결함 모델로 설명되어진다.

• 한국세라믹학회지
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• 제30권12호
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• pp.1023-1028
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• 1993

To obtain a single phase of Ba2Ti9O20 at lower temperature than previious other researches. We investigated the effect of Zr substitution for predetermined portions of Ti in Ba2Ti9O20. In this study, the four compounds(x=0, 0.028, 0.048, 0.068) of Ba2(Ti1-xZrx)9O20 were prepared by coprecipitation reaction of BaCl2, TiCl4 and ZrOCl2 with (NH4)2CO3 and NH4OH as the coprecipitating agents and pH regulators, in queous solution. Owing to 4.8 mol% addition, the single phase of Ba2Ti9O20 showing high Q was obtained at 115$0^{\circ}C$ which is lower by 25$0^{\circ}C$ than the temperature in case of mechanical mixtures of BaCO3 and TiO2.

• 한국세라믹학회지
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• 제33권4호
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• pp.448-454
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• 1996

BaTiO3 세라믹스의 입방정과 육방정간의 상전이에 따른 미세조직 변화를 관찰하였다. 입방정을 육방정영역에서 열처리하는 경우, 시편 표면부터 육방정상이 생성되었고 반대로 육방정을 입방정역에서 열처리하여 상전이 시킬때는 입방정상이 시편이 중심부에서부터 생성되었다. 또한 이러한 상전이 과정 중에는 빠른 입성장과 더불어 불규칙적인 입계형태를 나타내었다. 그 외 낮은 성형압으로 소결체의 밀도가 낮은 육방정 시편을 제조한 경우에는 상대적으로 입방정으로의 상전이가 억제되었다. 이러한 결과들은 육방정의 표면에너지가 입방정보다 상대적으로 낮기 때문으로 해석되었다.