• Title/Summary/Keyword: $BaTiO_3$절연체

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Multiple accelerated degradation test and failure analysis for $Ni-BaTiO_3$ MLCCs ($Ni-BaTiO_3$ MLCCs에 대한 복합 가속 열화 시험 및 고장 분석)

  • Kim, Jung-Woo;Kim, Jin-Seong;Lee, Hee-Soo;Kang, Do-Won;Kim, Jeong-Wook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.2
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    • pp.102-105
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    • 2009
  • The accelerated life time test of the MLCCs with different $BaTiO_3$ particle sizes were conducted at $150^{\circ}C$, 75 V condition and the effect of $BaTiO_3$ particle size on the breakdown voltage and degradation characteristics of MLCCs was investigated. The MLCCs were prepared by using the $BaTiO_3$ particles having the size of $0.525{\mu}m$, $0.555{\mu}m$, $0.580{\mu}m$ and Ni-electrode, respectively. The MLCCs which have the particle size of $0.525{\mu}m$, $0.555{\mu}m$, and $0.580{\mu}m$, respectively were confirmed to meet the standard requirements of X5R(change capacitance within ${\pm}15%$ at $-55{\sim}85^{\circ}C$) by TCC(Temperature Coefficient of Capacitance). The effect of the $BaTiO_3$ particle size on the insulation resistance behavior of MLCCs was confirmed by BDV(Breakdown Voltage) measurements and the cause and degree of degradation of MLCCs were characterized by XPS analysis after the accelerated life test. The MLCCs with $0.525{\mu}m-BaTiO_3$ showed better insulation resistance and BDV characteristics compare to other MLCCs and XPS analysis revealed that the MLCCs degradation is caused by the NiO peak and $BaTiO_3$ peak decrease.

Electrical properties and degradation behavior of Tm2O3 doped barium titanate ceramics for MLCCs (Tm2O3가 첨가된 MLCC용 BaTiO3 유전체의 전기적 특성 및 열화거동)

  • Kim, Do-Wan;Kim, Jin-Seong;Hui, K.N.;Lee, Hee-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.6
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    • pp.278-282
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    • 2010
  • The doping effect of thulium on electrical properties and degradation behavior in barium titanate ceramics ($BaTiO_3$) was investigated in terms of generations of core-shell structure and micro-chemical changes through highly accelerated degradation test. The dielectric specimens of pellet type and multi-layered sheets were prepared by using $BaTiO_3$ with undoped and doped with 1 mol% $Tm_2O_3$. The $BaTiO_3$ ceramics doped with 1 mol% $Tm_2O_3$ had 40% higher dielectric constant (${\varepsilon}$ = 2700) than that of the undoped $BaTiO_3$ specimen at curie temperature and met X7R specification. According to the result of highly accelerated degradation test conducted at $150^{\circ}C$, 70 V, and 24 hr, the oxygen diffusion was declined in dielectrics doped with 1 mol% $Tm_2O_3$. The $Tm^{3+}$ ion substituted selectively Ba site and Ti site and contributed to the generation of the core-shell structure. Oxygen vacancies occurred by substitution for Ti site could reduce excess oxygen that reacted to the Ni electrode.

Effect of NiO Addition on Dielectric Properties of BaTiO3 Ceramics (NiO 첨가가 BaTiO3 세라믹스의 유전특성에 미치는 영향)

  • 김윤호
    • Journal of the Microelectronics and Packaging Society
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    • v.1 no.2
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    • pp.105-112
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    • 1994
  • BaTiO3 의 B-site에 0-0.03 몰 범위의 NiO를 첨가한 Ba1-xSrxTi1-y-wNiyZrwO3-y 유전 체에서 NiO 첨가가 유전특성 및 절연저항의 내환원성에 미치는 영향을 조사하였다. B-site Ni 치환에 의해 a 축의 격자상수는 증가하고 c 축의 격자상수는 감소하여 정방성 c/a가 감 소하였으며 단위격자의 부피는 증가하였다. NiO 첨가에 따라 큐리온도는 저온으로 이동하 였으며 큐리온도의 변화율은 소결분위기에 영향을 받았다. NiO가 첨가되지 않은 조성에서 는 산소분압 109 MPa의 환원분위기 소성에 의해 비정항이 107$\Omega$.cm로 저하되었으나 0.01 몰이상의 NiO를 첨가한 조성에서는 공기중 소결시 얻을수 있었던 1011$\Omega$.cm로 저하되었으 나 0.01 몰 이상의 NiO를 첨가한 조성에서는 공기중 소결시 얻을 수 있었던 1011$\Omega$.cm 이 상의 비저항을 유지하였다.

$CaSnO_3$와 소결조제가 첨가된 $BaTiO_3$ 유전체 세라믹의 소결거동 및 유전특성

  • Kim, Tae-Hong;Lee, Jae-Shin;Choy, Tae-Goo
    • ETRI Journal
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    • v.13 no.2
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    • pp.42-53
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    • 1991
  • 고유전율 적충세라믹 커패시터 소재인 $BaTiO_3$ 자기물은 일반적으로 큐리오도인 약 $120^{\circ}C$부근에서 유전율이 최고 약 10,000정도로 증가한 다음 급격히 감소하므로 적절한 이동체를 첨가하여 큐리온도를 상온으로 이동시켜 상온에서 최대 유전율을 이용하여야 한다. 그리고$BaTiO_3$ 자기물은 $1300^{\circ}C$이상의 고온소결시 고가인 Pd전극이 요구된다. 그러나 자기물의 소결온도를 저온화화면 저가의 Ag합금으로 전극재료를 대체할 수 있다. 본 연구에서는 이동제로서 $CaSnO_3$ 를 이용하여 큐리온도를 상온으로 이동시켰다. 또한 소결온도를 저온화하기 위하여 $BaTiO_3$ 세라믹에 여러가지 산화물을 첨가하여 소결현상을 살펴보았다. 실험결과 첨가제를 넣지 않은 경우 소결온도는 $1350^{\circ}C$의 고온이 필요한 반면, $CuO,B_2O_3$$1050^{\circ}C$의 낮은 온도에서도 치밀화와 입도성장이 잘 일어났다. 특히 $B_2$$O_3$ 를 첨가한 경우는 $1250^{\circ}C$이상에서 소결할 때 절연저항이 낮아 유전손실이 큰 문제점을 보였지만, 최대 유전율이 11,000 정도로 높고, 양호한 유전율의 온도변화 특성을 나타내어 우수한 고유전율 소재의 첨가제로 응용될 가능성을 보였다

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The Insulation Characteristics of ($Ba_{0.85}Ca_{0.15}$)$TiO_3$-Zn Dielectrics (($Ba_{0.85}Ca_{0.15}$)$TiO_3$-Zn 유전체의 절연특성)

  • 홍경진;구할본;김태성;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.29-33
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    • 1995
  • The ($Ba_{0.85}Ca_{0.15}$)$TiO_3$-Zndielectrics was made by ZnO mol ratio from 0.1 to 0.4. The characteristics of structural was analyzed by SEM and XRD and the insulating properties was examined by dielectric constant and resistivity. The grain size were 1.3[$\mu\textrm{m}$] and those shape ware a rectangular. The relativity density were over 90[%] in all specimen. It was found that the best insulating characteristics were obtained for 0.3 mol ratio.

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Dielectric properties of dielectric for Mutilayer Ceramic Capacitor with low noise (저소음 특성을 가지는 적층 칩 세라믹 캐패시터용 유전체의 유전특성)

  • Yoon, Jung-Rag;Lee, Seog-Won;Lee, Heun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.284-285
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    • 2007
  • 본 논문에서는 저소음 및 저 신호 왜곡 특성을 가지는 내환원성 유전체 원료를 개발하기 위하여 $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$$CaTiO_3$, $SrTO_3$, $BaTiO_3$를 첨가하여 이에 따른 유전 특성을 조사하였다. 첨가량의 조절 및 glass frit 첨가를 통하여 환원성 분위기에서도 유전율 80 ~ 100, 절연저항 (R*C) 500[ohm-F] 이상의 유전특성을 얻었다. 본 연구결과로 얻어진 유전재료를 적용하면 무소음 및 저 신호 왜곡 특성을 가지면서도 고 신뢰성의 MLCC를 제작할 수 있을 것으로 예상된다.

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EL Devices for LCD Backlight Based on ZnS:Cu Phosphor (혼합파우더 및 절연박막층을 이용한 PELD의 광학특성)

  • 박수길;조성렬;전세호;엄재석;이주성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.391-394
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    • 1998
  • Electroluminescence is the light emission obtained by an electrical excitation energy passing through a phosphor under an applied high electrical field. EL are paid much attention on flat panel display as a backlight and indicator, which are divided into ACPRL(alternating-current powder electroluminescent) and ACTFEL(alternating-current powder electroluminescent). In this paper, Electric and emission properties on ACPEL are investigated based on ZnS:Cu phosphor. The basic structure on this is ITO glass/phosphor/insulator/ backelectrode, CR-M which has high efficiency on thermal properties and dielectric Properties was introduced and BaTiO$_3$ as a insulating layer in order to increase app1ied electric field on phosphor. Changing on Dielectric and emission Properties was caused by a different viscosity of binder which filled on space between phosphor particle. 60cd/$m^2$ under 60V, 2kHz sinusoidal was gotten from ACPELD prepared in this work.

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A study on the measurement of thermophysical properties of ceramic dielectric materials by unsteady square wave pulse heating method (非定常方形波 펄즈 加熱에 의한 세라믹 誘電體의 熱物性値 測定에 관한 硏究)

  • 차경옥
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.12 no.1
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    • pp.152-162
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    • 1988
  • In recent years, attention has been paid to the ceramic material next to metals and plastics due to its inherent characteristics, i.e., good hardness, resistance to heat and corrosion. Recently, various kinds of ceramic dielectrics have been developed for application in industry. It is of prime importance to know the thermophysical properties for wider use of these new materials. However, no extensive effort has been made for systematic measurement of the properties. In this paper, the dielectric constant of five different kinds of ceramic dielectrics ware measured. We call these samples as MgO.SiO$_{2}$, MgTiO$_{3}$, TiO$_{2}$, CaTiO$_{3}$, and BaTiO$_{3}$. Which are currently in commercial sue. The values of thermal dirrusivities, specific heats, and thermal conductivities of these ceramic dielectrics sere measured as a function of temperature ranging from room temperature to about 1300k.

Fabrication and Characteristics of a White Emission Electroluminicent Device (백색 전계발광소자의 제작과 그 특성)

  • Kim, Woo-Hyun;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.10 no.6
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    • pp.295-303
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    • 2001
  • White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

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Electrical and Optical Property of Powder Electroluminescent device at Dielectric variety (절연체 종류에 따른 후막 전계 발광소자의 광학 및 전기적 특성)

  • Oh, Joo-Youl;Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1800-1802
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    • 1999
  • Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/phosphor/Insulator/silver paste. The transparent electrode was ITO film and green(2704-01) and orange(2702-02) and blue-green(2703-01) were used as phosphor. The insulator was $BaTiO_3$ and $Y_2O_3$, back electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness, Transferred charge density using Sawyer-Towers circuit was measured.

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