• Journal of the Semiconductor & Display Technology
• /
• v.11 no.3
• /
• pp.63-67
• /
• 2012

The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.

• Korean Journal of Mineralogy and Petrology
• /
• v.36 no.3
• /
• pp.185-197
• /
• 2023

The Gubong Au-Ag deposit consists of eight lens-shaped quartz veins. These veins have filled fractures along fault zones within Precambrian metasedimentary rock. This has been one of the largest deposits in Korea, and is geologically a mix of orogenic-type and intrusion-related types. Korea Mining Promotion Corporation drilled into a quartz vein (referred to as the No. 6 vein) with a width of 0.9 m and a grade of 27.9 g/t Au at a depth of -728 ML by drilling (No. 90-12) in the southern site of the deposit, To further investigate the potential redevelopment of the No. 6 vein, another drilling (No. 04-1) was carried out in 2004. In 2004, samples (wallrock, wallrock alteration and quartz vein) were collected from the No. 04-1 drilling core site to study the occurrence and chemical composition of Ti-bearing minerals (ilmenite, rutile). Rutile from mineralized zone at a depth of -275 ML occur minerals including K-feldspar, biotite, quartz, calcite, chlorite, pyrite in wallrock alteration zone. Ilmenite and rutile from ore vein (No. 6 vein) at a depth of -779 ML occur minerals including white mica, chlorite, apatite, zircon, quartz, calcite, pyrrhotite, pyrite in wallrock alteration zone and quartz vein. Based on mineral assemblage, rutile was formed by hydrothermal alteration (chloritization) of Ti-rich biotite in the wallrock. Chemical composition of ilmenite has maximum values of 0.09 wt.% (HfO₂), 0.39 wt.% (V₂O₃) and 0.54 wt.% (BaO). Comparing the chemical composition of rutile at a depth -275 ML and -779 ML, Rutile at a depth of -779 ML is higher contents (WO₃, FeO and BaO) than rutile at a depth of -275 ML. The substitutions of rutile at a depth of -275 ML and -779 ML are as followed : rutile at a depth of -275 ML Ba²⁺ + Al³⁺ + Hf⁴⁺ + (Nb⁵⁺, Ta⁵⁺) ↔ 3Ti⁴⁺ + Fe²⁺, 2V⁴⁺ + (W⁵⁺, Ta⁵⁺, Nb⁵⁺) ↔ 2Ti⁴⁺ + Al³⁺ + (Fe²⁺, Ba²⁺), Al³⁺ + V⁴⁺+ (Nb⁵⁺, Ta⁵⁺) ↔ 2Ti⁴⁺ + 2Fe²⁺, rutile at a depth of -779 ML 2 (Fe²⁺, Ba²⁺) + Al³⁺ + (W⁵⁺, Nb⁵⁺, Ta⁵⁺) ↔ 2Ti⁴⁺ + (V⁴⁺, Hf⁴⁺), Fe²⁺ + Al³⁺ + Hf ⁴⁺ + (W⁵⁺, Nb⁵⁺, Ta⁵⁺) ↔ 2Ti⁴⁺ + V⁴⁺ + Ba²⁺, respectively. Based on these data and chemical composition of rutiles from orogenic-type deposits, rutiles from Gubong deposit was formed in a relatively oxidizing environment than the rutile from orogenictype deposits (Unsan deposit, Kori Kollo deposit, Big Bell deposit, Meguma gold-bearing quartz vein).

• Korean Journal of Materials Research
• /
• v.16 no.12
• /
• pp.747-753
• /
• 2006

(BaSr)$TiO_3$ (BST) thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry and their dielectric properties were investigated. With an additive, $Li_2CO_3$, the sintering temperature was lowered by $200^{\circ}C$. Sintering density was 5.7 g/$cm^3$ and the BST thick films exhibited a maximum dielectric constant, tunability at temperatures near phase transition point. Whilst their characteristics were deteriorated above the phase transition temperature, they were unchanged below the phase transition temperature, which is presumedly due to the acceleration of $90^{\circ}$ domain formation, its contribution to the relaxation of internal stress and the increase in sintering according to the replacement of Li.

• Korean Journal of Materials Research
• /
• v.8 no.8
• /
• pp.775-779
• /
• 1998

The resonant frequency fo and unloaded quality factor Qu of CoTi-substituted Barium ferrites($\textrm{BaCo}_{x}\textrm{Ti}_{x}\textrm{Fe}_{12-2x}\textrm{O}_{19}$, $1.0\leq\textrm{x}\leq5.0$) were measured at frequencies between 5 to 10GHz using the paralleled copper-plate wave guide method. The measurements showed that the permittivities of CoTi-substituted Barium ferrites(CoTi-BF) increased from 14.7 to 23.4 with the contents of CoTi, x, and the loss tangents had values of $\textrm{10}^{-3}$ order. From these results, CoTi-BF are considered to be very promising materials in microwave devices such as dielctric resonator antennas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.607-610
• /
• 2004

The Pb $(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4}TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were fabricated on the Pt/Ti/$SiO_2$/Si by RF sputtering method. The structural properties of the PZT(52/48)/BST(60/40) heterolayered thin films were investigated with Ar/$O_2$ ratio condition. All the PZT(52/48)/BST(60/40) heterolayered thin films had shown the PZT(111), (200) and BST(200) Peaks of the tetragonal structure. Increasing the Ar/$O_2$ ratio, the average roughness was increased. The thickness ratio of the to the PZT and BST thin film was 1:2. In the case of the PZT(52/48)/BST(60/40) heterolayered thin films with Ar/$O_2$ ratio of 80/20, the average roughness was 3.4 [nm].

• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.873-875
• /
• 1999

We have fabricated good quality superconducting $YBa_{2}Cu_{3}O_{7-\delta}$ thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrate with $CeO_2$ and $BaTiO_3$ buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with YBCO. $CeO_2$ layer may be helpful for power transmission due to its conducting property. In order to enhance the crystallization of YBCO films on metallic substrates. we deposited $CeO_2$ and $BaTiO_3$ buffer layers at various temperatures. The YBCO superconducting tape fabricated with $BaTiO_3$ and $CeO_2$ buffer layers shows 85K of transition temperature and about $8.4{\times}10^4A/cm^2$ of critical current density at 77K.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.12
• /
• pp.555-559
• /
• 2006

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.3
• /
• pp.37-43
• /
• 1999

Co-firing incompatibility between the low temperature sinterable Glass/ceramic and Ag-thick film was studied. The dielectric material, which has been developed for microwave frequency applications, consists of $SiO_2-TiO_2-Bi_2O_3$-$Bi_2O_3$-RO system(RO:BaO -CaO-SrO) crystallizable glass and $Al_2O_3$as a ceramic filler. The large camber in the sintered specimen and cracks at the Ag-film under the influence of the camber occurred due to the difference of densification rate between the ceramic sheet and the Ag-film $B_2O_3$addition to the Glass/ceramic mixture reduced the severe camber. The cambers decreased with increasing the $B_2O_3$ content, and completely disappeared with 14 vol% $B_2O_3$addition. With additions of $B_2O_3$, $\varepsilon_{r}$ decreased abruptly, Q$\times$f value increased largely and the $\tau_f$ value of the material quickly shifted to positive one.

• Clean Technology
• /
• v.23 no.1
• /
• pp.95-103
• /
• 2017

In this study, $ATiO_3$ (A = Ca, Sr, Ba) perovskite, which is the widely known for non $TiO_2$ photocatalysts, were synthesized using sol-gel method. And Ni was added at the A site of $ATiO_3$ by using that it is easy to incorporate. The physicochemical characteristics of the obtained $ATiO_3$ and Ni-$ATiO_3$ particles were confirmed using the X-ray diffraction (XRD) UV-visible spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), the $N_2$ adsorption-desorption isotherm measurement, and X-ray photoelectron spectroscopy (XPS). The $H_2$ was produced using the photolysis of MeOH. Using the Ni-$ATiO_3$ photocatalysts, $H_2$ production was higher than using the $ATiO_3$ photocatalysts. Especially, $273.84mmolg^{-1}$ $H_2$ was produced after 24 h reaction over the Ni-$SrTiO_3$. Also in the water (0.1 M KOH) with the Ni-$SrTiO_3$, $H_2$ production was $961.51mmolg^{-1}$ after 24 h reaction.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.43 no.3
• /
• pp.442-446
• /
• 1994

In this study, microwave dielectric properties of 0.182BaO-0.818TiOS12T ceramics were investigated with sintering temperature and annealing time, and the application for the microwave dielectric resonator was studied. In the specimen simtered at 1400[$^{\circ}C$], dielectric constant, unloaded Q and temperature coefficient of resonant frequency had good values of 35.36, 5692, -4.43[ppm/$^{\circ}C$], respectively. The specimen which temperature coefficient of resonant frequency($\tau$f) was vared positive to negative value was selected, thereafter microwave dielctric properties was investigated with annealing time(0~4[hr]) in the fixed annealing temperature of 1350[$^{\circ}C$]. Increasing the annealing time, dielectric constant and unloaded Q were increased and temperature coefficient of resonant frequency was decreased.