• Nuclear Engineering and Technology
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• v.56 no.5
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• pp.1822-1829
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• 2024

The search for materials that serve as good shields for radiation has become very important in light of the increasing exposure to ionizing radiation in various vital sectors. The aim is to search for novel materials with better radiation shielding properties that are stable, nontoxic, and abundant and environment friendly. The solidstate reaction approach has been used to synthesize a few ceramics, including BaZr_XTi_1-XO₃, Ba_1-XLa_XTiO₃ and Ba_1-XLa_XZr_XTi_1-XO₃ (with x = 0.10) i.eBaZr_0.10Ti_0.90O₃ (BZT), Ba_0.90La_0.10TiO₃ (BLT), and Ba_0.90La_0.10Zr_0.10Ti_0.90O₃ (BLZT). The density of the prepared samples varies from 6.3471 to 11.6003 g/cm³. The X-ray diffraction technique, shows strong peaks to confirm the crystalline structure of prepared ceramic samples. Using the G-P fitting approach, the advanced radiation shielding parameters (build-up factor) have been evaluated in the photon energy region of 1.5 keV-15 MeV. It is observed from the results that exposure buildup factor (EBF) and energy absorption buildup factor (EABF) are maximum for BLZT and has the minimum value for BZT in the entire photon energy regime. The results of this work should be useful in radiation shielding applications such as in industry, medicine, and nuclear engineering.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.370-374
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• 2002

This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.217-220
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• 1997

(Ba,Sr)TiO$_3$ thin film capacitors were prepared on SiO$_3$/Si(100)wafer by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Microstructural properties of (Ba,Sr)TiO$_3$ thin films were investigated by the SEM, XRD. The thickness and grain size were studied for the varying of RF power and temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.17-20
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• 1993

In this paper, the (1-x)($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$-x $Bi_2$$Ti_3$$O_{9}$(x=0,4,6,8[mol.%]) ceramics with paraelectric properties were, fabricated by mixed oxide method. The dielectric and structural properties of ceramics were studied with sintering temperature and addition of $Bi_2Ti_3O_{9}$, and the application for the high - voltage capacitor was investigated. In the specimens with sintering at 1350[$^{\circ}C$], sintered density was showed the highest value of 5.745[g/cm$^3$]. Increasing of sintering temperature, average grain size was increased. The specimen. ($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$sintered at 1350[$^{\circ}C$] showed good dielectric properties and breakdown voltage was showed the highest value of 200[kV]. Temperature coefficient of capacitance was stabilized in specimens added $Bi_2Ti_3O_{9}$ Sintered density. dielectric properties and breakdown voltage ware decreased with increasing the contents of $Bi_2Ti_3O_{9}$.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.3-8
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• 1994

Recently, sound and mechanical vibration are becoming important problems in our life. In the present study, the measurement of vibration absorption characteristics of barium titanate ceramics and the investigation of its relationship to microstructures were carried out. The barium titanate ceramics is expected to be better vibration absorption material owing to its chemical and physical stability than other conventional vibration absorbers like glasswool board. Barium titanate ceramics were prepared by sintering fiberous $BaTiO_{3}$ crystallites in order to enhance the vibration absorption characteristics. The fiberous $BaTiO_{3}$ ceramics were prepared through the ionic exchange after the preparation of fiberous $K_2Ti_4O_9$ with 0.2$\mu\textrm{m}$, 1.2$\mu\textrm{m}$, 2.0$\mu\textrm{m}$, diameter length by KDC method. The fiberous crystallites were oriented in a plane perpendicular to the press direction and sintered. The investigation of the grain diameters of the sintered ceramics, equivalent factor, electromechanical coupling factor($k_1$), and the generated voltage(V) shows that the grain's diameter decreases with the increase of the diameter of the used fiberous crystallites. The vibration absorption increases the crystallites' diameter. That means that the vibration absorption increases with the internal friction of grain boundary. Which was identified by the investigation of the equivallent circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.412-415
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• 2004

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as accepters and sintered $1250^{\circ}C/2hrs$. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $BaTiO_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.121-127
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• 1994

The capability for application of rf magnetron sputterred and post annealed BaTiO$_{3}$ thin films in dielectrics AC drived TFELD(thin film electroluminescent device) was investigated. The dielectric constant of the thin films slightly increased up to about 25 with increase fothe post annealing temperature in the range of 210$^{\circ}C$-480$^{\circ}C$. The dielectric loss was about 0.005-0.01 except for the high frequency range above 100kHz and nearly independent on post annealing temperature. The BaTiO$_{3}$ thin film used for TFELD was annealed at 480.deg. C and Si$_{3}$N$_{4}$ thin film was inserted between BaTiO$_{3}$, lower dielecrics and ZnS:Mn, phosphor layer for stable driving of the device and for fear of interdiffusion. Regardless of the frequency of the applied sine wave voltage, the threshold voltage of the prepared TFELD was 65volt and saturated brightness was about 3000cd/m$^{2}$ at 130volt(2kHz sine wave), 65volt above V$_{TH}$.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.169-175
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• 2002

Semiconductive nano $(Ba_{1-x}Sb_x)TiO_3$ powders were synthesized by the hydrothermal process and Sb was simultaneously doped in the hydrothermal condition. $(Ba_{1-x}Sb_x)TiO_3$ powders obtained from optimum condition(at 20$0^{\circ}C$ for 3hr) exhibited spherical shape, high purity and nano size. The PTCR characteristics was observed when 0.1 and 0.2 mole% Sb were added and sintered at over 130$0^{\circ}C$ for 1 hour, respectively. And The ceramics exhibit the PTCR characteristics with a resistively jump $ratio($\rho$_{max}/$\rho$_{min})$ of about $10^4$. Also we found that PTCR characteristics were dependent on the microstructure.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.516-524
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• 1995

In this study, to prepare the dielectric (Ba, Sr)TiO3 thin films by the sol-gel process, Titaminum (IV) sio-propoxide (Ti[OCH(CH3)2]4), Ba and Sr acetate were used for sol and thin films were prepared by dip-coating process. Stability of sol decreased with the increase of Sr, and thickness of thin films were obtained 0.13~0.17${\mu}{\textrm}{m}$ by 1 coating cycle. Transmittance of amorphous thin films heated at 500 and 55$0^{\circ}C$ was very good, and crystallization tendency of thin films according to heat-treatment temperature and crystallization characteristics of thin films heated at 11$0^{\circ}C$ for 3 hrs were analysed. As a result, good perovskite structure was obtained higher than 100$0^{\circ}C$, and tetragonality of thin film was decreased but pyrochlore was formed with increasing Sr. In case of addition to substitute 0.4mol% Sr for Ba, dielectric constant was 288 and loss factor (tan $\delta$) was 0.04.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.67-67
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• 2001