Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 9
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- Pages.121-127
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- 1994
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- 1016-135X(pISSN)
The Properties of ZnS:Mn AC TFEL Device with $BaTiO_3$ /$Si_3$ $N_4$ Insulating Thin Film
$BaTiO_3$ /$Si_3$ $N_4$ 이중절연막 구조의 교류구동형 ZnS:Mn 박막 EL 표시 조자의 특성
Abstract
The capability for application of rf magnetron sputterred and post annealed BaTiO
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