• Title/Summary/Keyword: $BaTiO_{3}$

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The Structural and electrical Properties of $BaTiO_3$ Thin Films Deposited on Si/MgO Substrates (Si/MgO 기판에 증착된 BaTiO$_3$ 박막의 구조 및 전기적 특성)

  • 홍경진;김태성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1108-1114
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    • 1998
  • $BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

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Effect of $Bi_2O_3$ on Dielectric Properties and Temperature Characteristics of $[BaTiO_3]_{0.9}+[BaZrO_3, SnO_2, La_2O_3, ZrO_2]_{0.1}$ ($[BaTiO_3]_{0.9}+[BaZrO_3, SnO_2, La_2O_3, ZrO_2]_{0.1}$의 Dielectric Properties 및 Temperature Characteristics에 미치는 $Bi_2O_3$의 영향)

  • 이병하;이경희;윤영호;손상철;유광수
    • Journal of the Korean Ceramic Society
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    • v.30 no.5
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    • pp.397-403
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    • 1993
  • Widely used dielectrics, barium titanate was promising material for ceramic capacitor. It was produced by specific formulation with various dopants-La2O3, ZrO2, SnO2, CaZrO3, CaTiO3, CaSnO3, Bi2O3, and etc.-according to demanded properties of capacitor. In this study, we would examinate the study of dielectric properties and temperatuer characteristics (T.C.) with the amount of Bi2O3. The sample was prepared with [BaTiO3]10+[BaZrO3, SnO2, La2O3, ZrO2]10 and Bi2O3 varied from 1.0, 1.5, 2.0, 2.5 to 3.0wt%. After milling and mixing for 15hrs, each sample was dried and then pressed at 700kg/$\textrm{cm}^2$ into pellets. Pellets were fired at 131$0^{\circ}C$, for 3hrs in air. As the result of measurements, dielectric constant, break down voltage, and insulation resistance were increased with the amount of Bi2O3, and the resonant frequency was shifted from high frequency to low frequency range. In the case of temperature characteristics, capacitance change rate was symmetrically changed at -$25^{\circ}C$ and +85$^{\circ}C$ respectively. Therefore, it is recognized that the temperature characteristics can be moderated with doping Bi2O3 in our study.

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Preparation and PTC properties of thin films $BaTiO_3$ ceramic system using RF/DC magnetron sputtering method (RF/DC 마그네트론 스퍼터법을 이용한 $BaTiO_3$계 세라믹 박막의 제조와 PTC특성)

  • 박춘배;송민종;김태완;강도열
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.77-82
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    • 1995
  • PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

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Electrical Properties of Donor-doped BaTiO3 Ceramics by Attrition Milling and Calcination Temperature (분쇄 방법 및 하소온도에 따른 Doner-doped BaTiO3의 전기적 특성)

  • Lee, Jeong-Cheol;Myong, Seong-Jae;Chun, Myoung-Pyo;Cho, Jeong-Ho;Kim, Byung-Ik;Shin, Dong-Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.3
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    • pp.217-221
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    • 2008
  • In this study, We have been investigated the effect of calcination temperature and high-energy ball-milling of powder influences the $BaTiO_3$-based PTCR(Positive Temperature coefficient Resistance) characteristics and microstructure. The mixed powder was obtained from $BaCO_3$, $TiO_2$, $CeO_2$ ball-milled in attrition mill. The mixed powder was calcine from 1000 $^{\circ}C$ to 1200 $^{\circ}C$ in air and then it was sintered in reduction- re-oxidation atmosphere. As a result, The room-temperature electrical resistivity decreased and increased with increasing calcination temperature. specially, Attrition milled powder could have low room-temperature resistivity and high PTC jump order at 1100 $^{\circ}C$. attrition milling had lower room-temperature resistivity than ball milling. Particle size decreased by Attrition milling of powder influences in calcination temperature and room-temperature resistivity.

Control of the Composition of $Ba_{1-x}Sr_ xTiO_3$ Single Crystals ($Ba_{1-x}Sr_ xTiO_3$ 단결정의 조성 제어)

  • 노건배;양상돈;유상임
    • Korean Journal of Crystallography
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    • v.14 no.2
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    • pp.73-78
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    • 2003
  • (Ba/sub 1-x/Sr/sub x/)TiO₃ (BST, 0.4< x <0.65) single crystals were successfully grown by the TSSG (Top-Seeded Solution Growth) method, using a commercial [100] SrTiO₃ or as-grown [100] BST single crystals as seed crystals. To obtain the BST single crystals with various compositions x, the Ba/sr molar ratios in the solutions were systematically controlled while the Ti ion content among all cations was fixed at 67 mol%. A linear regression curve between their x values and the molar ratios of Sr/(Ba + Sr) in the solutions could be obtained, which in turn could used to select the initial composition to produce BST crystal with an aimed x value. In addition, the isothermal growth was found more effective for obtaining a compositional uniformity than a slow cooling process.

Synthesis of Spherical Fine $PbTiO_3$ Particles by the Spray Pyrolysis Method Using Ultrasonic Vibrator (초음파 분무 열분해법에 의한 구형의 $PbTiO_3$ 미립자 제조)

  • 이서영;이동주;신건철
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.1
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    • pp.107-116
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    • 1991
  • Fine $PbTiO_3$ Particles were synthesized from the $Pb(NO_3)_2$and $TiO(NO_3)_2$ solution by the spray pyrolysis method using the ultrasonic vibrator as a mist generator. The obtained particles were characterized. The mechanisms of particle formation were discussed in comparison with those if other particles, such as $BaTiO_3$, $ZnO_2$, ZnO ....., in the same spray pyrolysis process.

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Electric Properties of $LiCO_3$ doped $(Ba_{0.5}Sr_{0.5})TiO_3$ Thick Films ($LiCO_3$가 첨가된 $(Ba_{0.5}Sr_{0.5})TiO_3$ 후막의 전기적 특성)

  • Nam, Sung-Pill;Park, In-Gil;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1432-1433
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    • 2006
  • $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were fabrication by sol-gel method. Sintering temperature must be suited to the LTCC technology. Structure and dielectric properties were investigated for effect of $Li_{2}CO_3$ dopants at BST. Structure of $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were dense and homogeneous with almost no pore. Relative permittivity was decreased and dielectric loss was increased with increasing $Li_{2}CO_3$ doping rations. In the case of the 3wt% $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics sintered at $900^{\circ}C$, relative permittivity and dielectric loss were 907 and 0.003 at 100 kHz.

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Structural and Dielectric Properties of the (Ba,Sr)$TiO_3$Thin Films Prepared by Sol-Gel Method (Sol-Gel법으로 제조한 (Ba,Sr)$TiO_3$ 박막의 구조 및 유전특성)

  • 이문기;정장호;이성갑;이영희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.9
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    • pp.711-717
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    • 1998
  • BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

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