• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.378-380
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• 2000

The epitaxial $BaTiO_{3}$ thin film was prepared on the MgO substrate by the coating-pyrolysis process using a mixed solution of Ba-naphthenate and Ti-naphthenate. The crystal structure of the epitaxial $BaTiO_{3}$ thin film was characterized by XRD ${\theta}/2{\theta}$ scan and asymmetric {303} rocking curve scan. The epitaxial $BaTiO_{3}$ thin film had the cubic phase with the lattice parameter of a = c = 0.4018 nm.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.266-271
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• 2004

A very small amount of SiO$_2$ was locally added in sintered BaTiO$_3$ ceramics and then heat-treated at 135$0^{\circ}C$. In the region where SiO$_2$ was not added, grain growth occurred very slowly. In the region where a very small amount of SiO$_2$ was added, however, grain growth occurred very actively. After long time annealing at 135$0^{\circ}C$, abnormal grains appeared only in the part where SiO$_2$ was added and grew up to 2 cm in size. In the grown abnormal grains or single crystals, (111) double or single twins were not observed. The growth of abnormal grains or single crystals was explained by formation of liquid phase in the region where SiO$_2$ was added. These results showed that centimeter-sized BaTiO$_3$ single crystals without (111) double or single twins could be fabricated by using abnormal grain growth.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.110-115
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• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.

• Journal of the Korean Chemical Society
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• v.33 no.1
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• pp.65-69
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• 1989

Barium titanyl oxalate was synthesized by adding ethanol solution of oxalic acid to the mixed aqueous solution which contained barium or lanthanum radiotracers in addition to Ba(NO$_3)_2$ and TiO(NO$_3)_2$. The oxalate was finally converted to BaTiO$_3$ by calcination at 1000$^{\circ}$C in air. The chemical formula of the oxalate was confirmed to be BaTiO(CTEX>$_2O_4)_2{\cdot}4H_2O$ by the thermal analysis of the barium titanyl oxalate. When the mixture's molar ratio(Ba/Ti) was within a range of 0.950-1.05, the formation of stoichiometric Barium titanate was confirmed with the help of barium tracers. The homogeneity of lanthanum deposite in the final product was also confirmed through the behavior of lanthanum tracers. The results as well as those obtained by XRD and SEM have been explained on the basis of the fact that the reaction occurs on the molecular level in solution and the barium titanate is formed in crystals of single phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.206-210
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• 2010

$BaTiO_3$ dielectric ceramics are widely used to multi-layer ceramic capacitor. The $BaTiO_3$ powder was synthesized at $950^{\circ}C$ by using a solid state reaction and grinded by using a high-energy mill. And then, 2.53 wt% glass frit was added to the synthesized $BaTiO_3$ powders for lowering the sintering temperature. The mixed powders were sintered at various temperatures of $1170^{\circ}C$, $1200^{\circ}C$, $1230^{\circ}C$. Microstructures of the sintered $BaTiO_3$ ceramics were inspected by SEM and crystal structures were analyzed by XRD method. The relative dielectric constant was measured by using a impedance/gain phase analyzer. The synthesized $BaTiO_3$ powder had the tetragonal perovskite structure without secondary phase and the particle size was below 200 nm. The relative densities measured at the samples sintered at the temperature above $1200^{\circ}C$ were about 95%. The relative dielectric constant showed maximum value of 2310, which was measured in the specimen sintered at $1200^{\circ}C$. From these results, we could know that the added glass frit had effects on both lowering the sintering temperature and improving the dielectric property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.183-186
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• 1996

BaTiO$_3$thin films were deposited on Pt/SiO$_2$/Si substrates by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Deposition rates and structural properties of BaTiO$_3$thin films were investigated by the SEM, XRD and AFM. The thickness of BaTiO$_3$thin films deposited with optimized conditions was 5200[$\AA$]. The grain size was found to increase remarkably with increasing sputtering power and independent on the sputtering pressure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.57-57
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.22-22
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.47-47
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• 2000

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.280-286
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• 2001

10 이하의 저유전율을 갖는 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스의 미세구조와 고주파 유전특성을 조사하였다. (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 정방정(tetragonal) 구조를 가진다. 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$세라믹스는 BaWO$_4$와 $Mg_2$SiO$_4$의 상들이 공존하는 혼합상을 보였으며, $Mg_2$SiO$_4$가 이차사으로 형성된 것이 관찰되었다. 120$0^{\circ}C$~140$0^{\circ}C$에서 2시간 동안 소결된 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 $\varepsilon$$_{r}$=6.37~8.21, Q.f=15000~99422 그리고 $ au$$_{f}$=73.9~48.9 ppm/$^{\circ}C$의 고주파 유전특성을 가졌다. $\tau$$_{f}$를 보정하기 위해, CaTiO$_3$(1,5 wt%)가 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x$\geq$0.9) 세라믹스에 첨가되었다. 135$0^{\circ}C$에서 2시간 동안 소결된 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$+CaTiO$_3$(5 wt%) 세라믹스는 $\varepsilon$$_{r}$=7.3, Q.f=30532 그리고 $\tau$$_{f}$=-30 ppm/$^{\circ}C$의 고주파 유전특성을 얻었다. 얻었다.