• Title/Summary/Keyword: $BaTiO_{3}$

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Microwave Dielectric Properties of $BaTi_4O_9$ Ceramics with addition of $Y_2O_3$ ($Y_2O_3$ 첨가에 따른 $BaTi_4O_9$ 세라믹스의 마이크로파 유전특성)

  • Kim, Jung-Hun;Kim, Ji-Heon;Chung, Jang-Ho;Park, In-Gil;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.88-90
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    • 2002
  • The $BaTi_4O_9$ ceramics with $Y_2O_3$(0.5wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. The microwave dielectric properties also were investigated as a function of sintering temperature. According to the X-ray diffraction pattern of the $BaTi_4O_9$ ceramics with $Y_2O_3$(0.5wt%), the orthorhombic $BaTi_4O_9$ were appeared. In the case of $BaTi_4O_9+Y_2O_3$(0.5wt%) ceramics sintered $1400^{\circ}C$, dielectric constant. quality factor and temperature coefficient of resonant frequency were 41.3, 41,600, $+3.2ppm/^{\circ}C$, respectively.

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Defect Chemistry in Simple ATi$O_3$Perovskite Ceramics (ATi$O_3$단순 페롭스카이트의 결함구조)

  • Han, Yeong-Ho
    • Korean Journal of Materials Research
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    • v.2 no.4
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    • pp.248-256
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    • 1992
  • This paper has reviewed some of the basic principles that underlie the field of defect chemistry in simple ATi$O_3$(A=Ca, Sr, Ba) perovskites. Frenkel defects in perovskite structure is very much unlikely, and Schottky defects and intrinsic electronic defects in undoped materials are negligibly small compared with background acceptor impurities. The electrical properties of perovskite ceramics are dependent on the aliovalent impurities. Since perovskite structure is a ternary system, the stoiohiometry between cations as well as cation-anion ratio will affect defect structure and electrical properties. BaTi$O_3$and SrTi$O_3$show a limited deviation from the cation stoichiometry while CaTi$O_3$has significant excess CaO and Ti$O_2$solubility.

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Preparation of Ferroelectric Barium Titanate Fine Particles by Hydrothermal Method and Their Dielectric Properties -Variation of Dielectric Properties and Phase Transition by Heat Treatment- (강유전성 티탄산바륨 극미립자의 수열합성과 그 유전특성 - 열처리에 의한 상전이 및 유전 특성 변화 -)

  • Um, Myeong-Heon;Lee, Jin-Sik;Lee, Chul-Tae
    • Applied Chemistry for Engineering
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    • v.9 no.6
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    • pp.817-821
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    • 1998
  • $BaTiO_3$ particles were prepared using $Ba(OH)_2{\cdot}8H_2O$ and $Ti(OC_2H_5)O_4$ by the hydrothermal method and their characteristics treated at the various temperatures have been investigated. This prepared $BaTiO_3$ powder includes a very small amount of $H_2O$ and $OH^-$. By increasing the treated temperature from $200^{\circ}C$ to $1000^{\circ}C$, the mean particle size was accordingly increased from $0.022{\mu}m$ to $0.072{\mu}m$ and the tetrogonality(c/a)was increased from 1.02 to 1.2 so that the phase transition to tetroganal takes place. $BaTiO_3$ sintered at $1250^{\circ}C$ after heat treatment at $400^{\circ}C$ for 3 hrs showed a specific dielectric constant of 8120 and surface activation energy was 9680 kcal/mol.

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Sintering and Microwave Dielectric Properties Of Ba2Ti9O20 Ceramics Prepared by Precursor Method

  • Sung, Je-Hong;Lee, Joon-Hyung;Kim, Jeong-Joo;Lee, Hee-Young;Cho, Sang-Hee
    • Journal of the Korean Ceramic Society
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    • v.40 no.4
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    • pp.365-370
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    • 2003
  • The phase development process of $Ba_2$ $Ti_{9}$ $O_{20}$ ceramics is not clearly known and frequently accompanies second phases which deteriorate dielectric properties. In synthesizing $Ba_2$ $Ti_{9}$ $O_{20}$ ceramics, in order to trace the reaction sequence during conventional solid-state reaction in BaO-Ti $O_2$ system, different barium sources of BaC0$_3$ and BaTi0$_3$ precursor were used as starting materials. From the analysis of XRD patterns, different secondary phases could be identified depending on the barium source used, which might mean that the equilibrium phases in BaO-Ti $O_2$ system are very difficult to be synthesized. Because the BaTi0$_3$ precursor provides short diffusion paths of ions, the system revealed less secondary phases during solid state reaction. In synthesizing BaO-xSm$_2$0$_3$-4.5Ti0$_2$ system using different barium sources, different secondary phases were developed also. Microstructure and dielectric properties were examined and discussed in terms of secondary phase development.

Piezoelectric and Dielectric Properties of (Na,Li)$NbO_3$ Ceramics According to the $BaTiO_3$ substitution ($BaTiO_3$ 치환에 따른 (Na,Li)$NbO_3$ 세라믹스의 압전 및 유전특성)

  • Lee, Sang-Ho;Lee, Kab-Soo;Ryu, Ju-Hyun;Ryu, Sung-Lim;Song, Hyun-Seon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.272-273
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    • 2007
  • In this study, in order to develop the composition ceramics of lead-free ultrasonic motor, (Na,Li)$NbO_3-BaTiO_3$ ceramics were fabricated using a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $BaTiO_3$, substitution. $BaTiO_3$ substitution enhanced density, dielectric constants$({\varepsilon}_r)$ and electromechanical coupling factor$(k_p)$. However, mechanical quality factor was deteriorated. At the $BaTiO_3$ substitution of 4mol%, density, electromechanical coupling factor$(k_p)$, dielectric constants$({\varepsilon}_r)$ and piezoelectric constant$(d_{33})$ of specimen showed the optimum value of $4.493g/cm^3$, 0.236, 175, 70pC/N, respectively.

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Terahertz Wave Generation via Stimulated Polariton Scattering in BaTiO3 Bulk Crystal with High Parametric Gain

  • Li, Zhongyang;Yuan, Bin;Wang, Silei;Wang, Mengtao;Bing, Pibin
    • Current Optics and Photonics
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    • v.2 no.3
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    • pp.261-268
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    • 2018
  • Stimulated polariton scattering (SPS) from the $A_1$ transverse optical (TO) modes of $BaTiO_3$ bulk crystal generating a terahertz (THz) wave with the noncollinear phase-matching (NPM) condition is theoretically investigated. To our best knowledge, this is the first report on THz wave generation from $BaTiO_3$ bulk crystal via SPS. Phase-matching (PM) characteristics in the NPM configuration are analyzed. Effective parametric gain lengths for the Stokes and THz waves in the NPM configuration are calculated. The effective parametric gain coefficient and absorption coefficient of the THz wave in $BaTiO_3$ are theoretically simulated. The THz phonon flux densities generated via SPS in $BaTiO_3$ are theoretically calculated by solving the coupled wave equations under the NPM condition. The PM characteristics and THz-wave parametric gain characteristics in $BaTiO_3$ are compared to those in $MgO:LiNbO_3$. The results of the analysis indicate that $BaTiO_3$ is an attractive optical crystal for efficient THz wave generation via SPS.

Synthesis of $BaTiO_3$ nanoparticle by a solvothermal method (Solvothermal 방법에 의한 $BaTiO_3$ 나노입자의 합성)

  • Yeo, Ki-Ho;Moon, Byung-Kee;Son, Se-Mo;Chung, Su-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.732-734
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    • 2003
  • A solvothermal synthetic method to $BaTiO_3$ nanoparticle has been investigated in toluene solution with $BaTi(OR)_6$ as precursor. A precursor prepared from barium metal with toluene, isopropanol and titanium isopropoxide was used as a starting material. Weight ratio of precursor to solvent prepared in the mixture are 5/100, 10/100, 20/100 and 50/100wt%. At the weight ratio of 50/100wt%, $BaTiO_3$ butterfly twin crystalline(${\fallingdotseq}100nm$) was obtained after synthesis at $250^{\circ}C$ for 20hrs in an autoclave. X-ray diffraction and transmission electron microscopy showed that the product of 50/100wt% has crystallization. At 5/100, 10/100, and 20/100wt%, however, red colloidal solution was obtained after synthesis and crystalline phase of $BaTiO_3$ was not produced.

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Structure Analysis of BaTiO3 Film on the MgO(100) Surface by Impact-Collision Ion Scattering Spectroscopy (직충돌 이온산란 분광법을 사용한 MgO(100) 면에 성장된 BaTiO3막의 구조해석)

  • Hwang, Yeon;Lee, Tae-Kun
    • Journal of the Korean Ceramic Society
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    • v.43 no.1 s.284
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    • pp.62-67
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    • 2006
  • Time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS) using 2 keV $He^+$ ion was applied to study the geometrical structure of the $BaTiO_3$ thin film which was grown on the MgO(100) surface. Hetero-epitaxial $BaTiO_3$ layers were formed on the MgO(100) surface by thermal evaporation of titanium followed first by oxidation at $400^{\circ}C$, subsequently by barium evaporation, and finally by annealing at $800^{\circ}C$. The atomic structure of $BaTiO_3$ layers was investigated by the scattering intensity variation of $He^+$ ions on TOF-ICISS and by the patterns of reflection high energy electron diffraction. The scattered ion intensity was measured along the <001> and <011> azimuth varying the incident angle. Our investigation revealed that perovskite structured $BaTiO_3$ layers were grown with a larger lattice parameter than that of the bulk phase on the MgO(100) surface.

Deposition $Ba_{1-x}Sr_xTiO_3$Thin Films and Electrical Properties with Various Materials Top Electrodes (강유전체$Ba_{1-x}Sr_xTiO_3$ 박막의 제조 및 상부전극재료에 따른 전기적 특성)

  • Park, Choon-Bae;Kim, Deok-Kyu;Jeon, Jang-Bae
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.6
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    • pp.410-415
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    • 1999
  • $Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

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