• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• Corrosion Science and Technology
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• v.5 no.4
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• pp.149-152
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• 2006

$BaTiO_3$ coatings were prepared by micro arc oxidation (MAO) method. Only $Ba(OH)_2$ was dissolved in the electrolyte and process time was less than 30 min. Commercial purity $Ba(OH)_2$ (97%) containing $BaCO_3$ as impurity was used in preparing the electrolyte. XRD showed that the coating was composed of largely $BaTiO_3$, and in some process conditions, small quantity of impurity, $BaCO_3$, was characterized in the coating layer. The quantity of $BaCO_3$ could be controlled to negligible quantity by regulating the applied voltage and duration time of the MAO process.

• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.55-60
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• 1986

A mechanism for formation of surface reoxidation layer in Surface Boundary Layer Capacitor (SBLC) has been studied. SBLC were prepared by reduction of $BaTiO_3$ doped with $Bi_2O_3$ and electrode firing of silver paste containing $Bi_2O_3$ The apparent dielectric constant was in the order of $10^5$ and the insulation resistance larger than $10^6$$\Omega$ It can be expected that $Bi_2O_3$ dopant in $BaTiO_3$ plays the role of inhibition of grain growth and decreasing the resistivity of $BaTiO_3$. In order to confirm the process of surface reoxidation layer effects of atmosphere and annealing time in electrode sintering were investigated.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.201-204
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• 2009

$BaTiO_3/SrTiO_3$ and $PbTiO_3/PbZrO_3$ superlattice thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the pulsed laser deposition process. The morphologies and physical properties of deposited films were characterized by using X-ray diffractometer, HR-SEM, and Impedance Analyzer. XRD data and SEM images of the films indicate that each layer was well deposited alternatively in the superlattice structure. The dielectric constant of $BaTiO_3/SrTiO_3$ superlattice thin film was higher than that of individual $BaTiO_3$ or $SrTiO_3$ film. Same result was obtained in the $PbTiO_3/PbZrO_3$system. The dielectric constant of a superlattice film was getting higher as the number of layer is increased.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.517-524
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• 2005

Barium titanate ($BaTiO_3$) particles were prepared by spray pyrolysis from spray solution containing organic additives. The effects of the type and amount of organic precursors on the crystal structure and morphology of the $BaTiO_3$ particles were investigated. It was found that the morphology of $BaTiO_3$ particles before and after calcination depended on the type of organic additives such as citric acid, ethylene glycol and polyethylene glycol. Among these organic additives, citric acid was the most effective to prepare $BaTiO_3$ particles with nano-structured morphology consisting with uniform size nanometer particles after calcination. It was also found that the phase transformability of the metastable cubic phase to the tetragonal one during calcination could be improved by increasing the content of citric acid in the spray solution. As a result, $BaTiO_3$ particles prepared from spray solution containing high concentration of citric acid had good tetragonality, uniform and fine size, and high BET surface area after calcination. $BaTiO_3$ particles prepared by spray pyrolysis had nanometer size and uniform morphology after simple ball milling process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.57-58
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• 2008

PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}Na_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}Na_{1/2}TiO_3$. $Bi_{1/2}Na_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_{1/2}Na_{1/2}TiO_3$, $BaCO_3$, $TiO_2$ and $Y_2O_3$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1960-1961
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5, Ti0.5)O3/BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour, Structural properties of Pb(Zr0.5,Ti0.5)O3/BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / EaTiO3 multilayered thick films.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.511-515
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• 2000

The effect of Ba2+ ion dissolution with different pH and amount of PAA on microstructural changes of green and sintered bodies and its electrical properties was studied in aqueous nano-size BaTiO3 slurry system. The dissolution of Ba2+ was least at strong base, pH 10.8 and by addition of amount of 0.15 wt% PAA. The green body with the lowest of dissolution of Ba2+ at pH 10.8 and 0.15 wt% PAA had minimum values of average pore size, 40nm and shown high increase of sintered density. The compact sintered at 125$0^{\circ}C$ for 2 hr with highest Ba2+ dissolution had low density and dielectric constant due to abnormal grian growth. However, the sintered body with the lowest Ba2+ dissolution had high sintered density and then shown high dielectric constant.

• Journal of the Korean Ceramic Society
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• v.38 no.7
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• pp.615-620
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• 2001

E $r_2$ $O_3$-MgO 복합 첨가가 BaTi $O_3$계 내환원성 X7R 재질의 유전특성에 미치는 영향에 대하여 환원성 분위기에서 연구하였다. (B $a_{1-x}$ E $r_{x}$)( $Ti_{1-y}$M $g_{y}$ ) $O_3$첨가계에서 1.0 mol% 이상 MgO의 복합첨가로 E $r_{Ba}$ 도너 불순물과 $Mg_{Ti}$ 억셉터 불순물이 전기적으로 보상되어, 환원성분위기 소결 후에도 $10^{10}$Ωcm 이상의 높은 절연저항을 나타내었다. E $r_2$ $O_3$가 첨가된 시편에서 MgO가 2.0 mol% 이상 첨가될 경우, 유전율의 온도안정성이 향상되어 X7R 규격을 만족시켰으며 1.0$mu extrm{m}$ 이하의 작고 균일한 입자가 관찰되었다. 한편, E $r_2$ $O_3$의 첨가량이 3.0 mol%로 증가함에 따라 유전율의 온도안정성이 향상되었으나 상대적으로 상온 유전상수값이 현저히 감소하였다.였다.다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.