• Economic and Environmental Geology
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• v.25 no.1
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• pp.27-39
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• 1992

Several pyrophyllite deposits occur around the Milyang area where Cretaceous andesitic rocks and spatially related granitic rocks are widely distributed. Pyrophyllite ores consist mainly of pyrophyllite, and quartz with small amount of sericite, pyrite, dumortierite, and diaspore. The andesitic rocks and spatially related granitic rocks in this area suggest that they could be formed from the same series of a calc-alkaline magma series. The contents of $SiO_2$, $Al_2O_3$, LOI(loss on ignition) are enriched, and $K_2O$, $Na_2O$, CaO, MgO, $Fe_2O_3$ are depleted in altered andesitic rocks and ores. Enrichment of As, Cr, Sr, V, Sb and depletion of Ba, Cs, Ni, Rb, U, Y, Co, Sc, Zn are characteristic during mineralization. The pyrophyllite ores can be discriminated from the altered-and unaltered wall-rocks by an increasing of $(La/Lu)_{cn}$ from 4.18~22.13 to 8.98~55.05. In R-mode cluster analysis, Yb-Lu-Y, La-Ce-Hf-Th-U-Zr, $TiO_2-V-Al_2O_3$, Sm-Eu, $CaO-Na_2O-MnO$, Cu-Zn-Ag, $K_2O-Rb$ are closely correlated. In the discriminant analysis of multi-element data, $P_2O_5$, As, Cr and $Fe_2O_3$, Sr are helpful to identify the ores from the unaltered-and altered wall-rocks. In the factor analysis, the factors of alteration of andesitic rocks and ore mineralization were extracted. In the change of ions per unit volume, $SiO_2$, $Al^{3+}$ and LOI are enriched and $Na^+$, $K^+$, $Ca^{2+}$, $Mg^{2+}$, $Mn^{2+}$ and $Fe^{3+}$ are depleted during the alteration processes. The Milyang and the Sungjin pyrophyllite deposits could be mineralized by hydrothermal alteration in a geochemical condition of low activity ratio of alkaline ions to hydrogen ion with reference to spatially related granitic rocks.

• Economic and Environmental Geology
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• v.23 no.2
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• pp.245-259
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• 1990

Petrochemical analyses of granitic rocks including trace element, REE and oxygen isotope were carried out to understand petrogenesis of plutonic rocks from the Chungju, Wolaksan and Jecheon granite batholiths, which might be related with tungsten-base metal-fluorite mineralization in the Hwanggangri metallogenic province. Different geochemical characteristics such as major and trace elements were found between Jurassic Daebo granitic rocks (Chungju, Jecheon, Wonju, and Boeun granitic rocks) and Cretaceous Bulgugsa granitic rocks (Wolaksan, Muamsa and Sokrisan granitic rocks). Cretaceous granitoids are characterized by high $SiO_2$and $K_2O$ contents and low $TiO_2$, $Al_2O_3$, MgO and CaO contents. They also have relatively high contents of trace elements(Zn, V, Co, Cr, Sr, and Ba) in comparison with the Jurassic granitoids. (Eu)/($Eu^*$) and $(La/Lu)_{CN}$ ratios of Jurassic plutons vary from 0.78 to 1.13 and from 26.02 to 30.5, respectively, while the ratios of Cretaceous ones range from 0.22 to 0.28 and from 4.42 to 14.2, respectively. The REE patterns of the Cretaceous and Jurassic granitic rocks have quite different Eu anomalies: large negative Eu anomaly in the former, and mild or absent Eu anomaly in the latter. The large Eu negative of Cretaceous granitic rocks are interpreted as a differentiated product of fractional crystallization of granitic magma deduced by Rayleigh fractionation model(Tsusue et al., 1987). Oxygen isotopic compositions of quartz for Daebo and Bulgugsa granitic rocks range from 9.98 to 10.51‰ and from 8.26 to 9.56‰, respectively. The Daebo granitic rocks enriched in $^{18}0$ suggest that the magma be undergone different partial melting processes from the Bulgugsa ones. Of the Bulgugsa granitoids, Wolaksan and Sokrisan mass have different contents of trace elements and ${\delta}\;^{18}0$ values of the silicate minerals, which indicate that they are not from the identical source of magma. Many mineral deposits are distributed in and/or near the Wolaksan and Muamsa granitic rocks, but a few mineral deposits are found in and near the Chungju and Jecheon granite batholiths. It might be depend on geochemisty of the related igneous rocks which have low contents of Ba, Sr, Co, V, Cr, Ni, Zn and high contents of Nb and Y, and on lithology of country rocks such as cabonate and noncarbonate rocks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Korean Journal of Mineralogy and Petrology
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• v.34 no.1
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• pp.1-14
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• 2021

The Unsang gold deposit has been one of the three largest deposits (Daeyudong, Kwangyang) in Korea. The geology of this deposit consists of series of host rocks including Precambrian metasedimentary rock and Jurassic Porphyritic granite. The deposit consists of Au-bearing quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock and Jurassic Porphyritic granite, which suggests that it is an orogenic-type deposit. Quartz veins are classified as 1) galena-quartz vein type, 2) pyrrhotite-quartz vein type, 3) pyrite-quartz vein type, 4) pegmatic quartz vein type, 5) muscovite-quartz vein type and 6) simple quartz vein type based on mineral assembles. The studied quartz vein is pyrite-quartz vein type which occurs as sericitization, chloritization and silicification. The white mica from stylolitic seams of laminated quartz vein occurs as fine or medium aggregate associated with white quartz, pyrite, chlorite, rutile, monazite, apatite, K-feldspar, zircon and calcite. The structural formular of white mica from laminated quartz vein is (K0.98-0.86Na0.02-0.00Ca0.01-0.00Ba0.01-0.00 Sr0.00)1.00-0.88(Al1.70-1.57Mg0.22-0.09Fe0.23-0.10Mn0.00Ti0.04-0.02Cr0.01-0.00V0.00Ni0.00)2.06-1.95 (Si3.38-3.17Al0.83-0.62)4.00O10(OH2.00-1.91F0.09-0.00)2.00. It indicated that white mica of laminated quartz vein has less K, Na and Ca, and more Si than theoretical dioctahedral micas. Compositional variations in white mica from laminated quartz vein are caused by phengitic or Tschermark substitution [(Al3+)VI+(Al3+)IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV] and direct (Fe3+)VI <-> (Al3+)VI substitution. The structural formular of chlorite from laminated quartz vein is((Mg1.11-0.80Fe3.69-3.14Mn0.01-0.00Zn0.01-0.00K0.07-0.01Na0.01-0.00Ca0.04-0.01Al1.66-1.09)5.75-5.69 (Si3.49-2.96Al1.04-0.51)4.00O10 (OH)8. It indicated that chlorite of laminated quartz vein has more Si than theoretical chlorite. Compositional variations in chlorite from laminated quartz vein are caused by phengitic or Tschermark substitution (Al3+,VI+Al3+,IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV) and octahedral Fe2+ <-> Mg2+ (Mn2+) substitution. Therefore, laminated quartz vein and alteration minerals of the Unsan Au deposit was formed during ductile shear stage of orogeny.

• Coupled systems mechanics
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• v.1 no.2
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• pp.205-217
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• 2012

A smart beam made of magneto-electro-elastic (MEE) material having piezoelectric phase and piezomagnetic phase, shows the coupling between magnetic, electric, thermal and mechanical under thermal environment. Product properties such as pyroelectric and pyromagnetic are generated in this MEE material under thermal environment. Recently studies have been published on the product properties (pyroelectric and pyromagnetic) for magneto-electro-thermo-elastic smart composite. Hence, the magneto-electro-elastic beam with different volume fractions, investigated under uniform temperature rise is the main aim of this paper, to study the influence of product properties on clamped-free boundary condition, using finite element procedures. The finite element beam is modeled using eight node 3D brick element with five nodal degrees of freedom viz. displacements in the x, y and z directions and electric and magnetic potentials. It is found that a significant increase in electric potential observed at volume fraction of $BaTiO_3$, $v_f$ = 0.2 due to pyroelectric effect. In-contrast, the displacements and stresses are not much affected.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

• 한국정보통신설비학회:학술대회논문집
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• 2003.08a
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• pp.286-288
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• 2003

In this paper, in order to obtain a large differential phase shift with a little change in applied voltage, a ferroelectric reflective load circuit has been designed on top of barium strontium titanate $(Ba,Sr)TiO_3$ [BST] thin film. The design of the ferroelectric reflection-type phase shifter is based on a reflection theory of terminating circuit, which has a reflection-type analogue phase shifter with two ports terminated in symmetric phase-controllable reflective networks. To achieve large amounts of phase shift in low bias-voltage range, the effects of change of capacitance and transmission line connected with two coupled ports of a 3-dB $90^{\circ}$ branch-line hybrid coupler have been investigated. A large phase shift with a small capacitance change in the parallel terminating circuit has been demonstrated in the paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.180-181
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• 2008

화학양론적 $BaTiO_3$의 소결은 고온의 에너지를 필요로 하며, 내부전극과 세라믹충의 동시소성과정에서 Ni이 세라믹층으로의 확산이 발생되어 PTC의 물성저하를 초래한다. 본 연구에서는 저온에서 액상을 형성하여 소결온도를 낮추는 것으로 알려진 산화물 및 비산화물계 소결첨가제가 적층 PTC 세라믹스의 미세구조 및 전기적 특성에 미치는 영향에 대하여 고찰하였다. 소결과정에서 분해되어 기체를 형성하는 BN, $Li_2CO_3$, LiF의 경우 기공율을 증가시켜 산소의 이동경로를 형성하였으며, 이는 입계의 재산화를 용이하게 하여 PTC 효과를 보였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.3
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• pp.116-121
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• 2006

Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.