• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• Economic and Environmental Geology
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• v.27 no.1
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• pp.29-39
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• 1994

Gabbroic rocks in which titanomagnetite orebodies are embedded were emplaced in Precambrian metasedimentary rocks. Hornblende K-Ar ages for equigranula and gneissic gabbros were obtained to be $1021.8{\pm}14.5$ Ma and $1468.4{\pm}20.8$ Ma, respectively. Biotite-granite has an age of 116.4 Ma, which has corresponded to Daebo granite. Amphibole minerals of the gabbroic rock and the magnetite orebodies belong to calcic amphibole group such as ferroan pargasite, pargasite, and ferro-pargasite. The gabbroic rocks have unusually high content of $TiO_2$ ranging from 0.88 to 6.03 wt.% with an average value of 3.46 wt.% as compared to normal gabbroic rock with 1.32 wt.% in $TiO_2$. Incompatible elements such as Ba and Sr of the gabbros are negatively correlated with $SiO_2$. In contrast, Co and Cr have a positive correlation with $SiO_2$, suggesting a normal differentiation trend of gabbroic magma.

• The Journal of the Petrological Society of Korea
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• v.6 no.1
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• pp.1-18
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• 1997

Andesitic pyroclastics and lava flows are deposited as a part of composite volcanoes by Cretaceous volcanic activity in Geojae Island, off the coast of Korea. The andesitic pyroclastics are composed of tuff breccia and lapilli tuff minor intercalated tuff. Lava flows are divided into dense and porphyritic andesite containing phenocrysts of plagioclase, pyroxene, and/or hornblende. The andesitic rocks represent charactersitcs of carc-alkaline BAR association with basalt, basaltic andesite, andesite, and dacite to rhyolite. Major element variations of the volcanic rocks show that $Al_2O_3$, total FeO, CaO, MgO and $TiO_2$ decrease with increasing $SiO_2$ but $K_2O$ and total alkalis increase, and represent differntiation trend of calc-alkaline rock series. In spider diagram, contents of Sr, K, Rb, Ba, and Th are relatively high, but contents of Nb, P, Ti and Cr are low. These petrochemcial characteristics are similar to those of rocks from island arc or continental margein related to plate subduction. Chondrite-normalized REE patterns of volcanic rocks are paralle to subparallel, with LREE enriched than HREE, and show gradual increase of negative Eu anomaly from basalt to dacite and rhyolite, suggesting comagmatic fractional crystallization with minor effects of assimilation and magma mixing. Andesitic rocks are assumed medium-K orogenic andesites that formed in the tectomagmatic environment of subduction zone under normal continental margin arc.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.35-41
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• 2012

Presently, the most promising family of lead-free piezoelectric ceramics is based on $K_{0.5}Na_{0.5}NbO_3$(KNN). Lithium, silver and antimony co-doped KNN ceramics show high piezoelectric properties at room temperature, but often suffer from abnormal grain growth. In the present work, the $(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$ component, which has relaxor ferroelectric characteristics, was doped to suppress the abnormal grain growth. To investigate this effect, Lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3-x(Ba_{0.85}Ca_{0.15})(Ti_{0.88}Zr_{0.12})O_3$[KNLN-AS-xBCTZ] piezoelectric ceramics were synthesized by ball mill and nanosized-milling processes in lead-Free $0.95(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}NbO_3-(0.05-x)AgSbO_3$ in order to suppress the abnormal grain growth. The nanosized milling process of calcined powders enhanced the sintering density. The phase structure, microstructure, and ferroelectric and piezoelectric properties of the KNLN-AS ceramics were systematically investigated. XRD patterns for the doped and undoped samples showed perovskite phase while tetragonality was increased with increasing BCZT content, which increase was closely related to the decrease of TO-T. Dense and uniform microstructures were observed for all of the doped BCZT ceramics. After the addition of BCTZ, the tetragonal-cubic and orthorhombic-tetragonal phase transitions shifted to lower temperatures compared to those for the pure KNNL-AS. A coexistence of the orthorhombic and tetragonal phases was hence formed in the ceramics with x = 0.02 mol at room temperature, leading to a significant enhancement of the piezoelectric properties. For the composition with x = 0.02 mol, the piezoelectric properties showed optimum values of: $d_{33}$ = 185 pC/N, $k_P$ = 41%, $T_C=325^{\circ}C$, $T_{O-T}=-4^{\circ}C$.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$increases in C1$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinity of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.171-172
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• 2008

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ (BSCT) thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ ($0.1{\sim}0.7$ mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The lattice constants of the BSCT thick film doped with 0.1 mol% is 0.3955 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about 6.3 mm. The thickness of all BSCT thick films was approximately 60 mm. The Curie temperature of the BSCT specimen doped with 0.1 mol% $Yb_2O_3$ was $18^{\circ}C$, and the dielectric constantand dielectric loss at this temperature was 4637 and 4.2%, respectively. The BSCT specimen doped with 0.1 mol% $Yb_2O_3$ showed the maximum value of $349{\times}10^{-9}C/cm^2K$ at Curie temperature. The figure of merit $F_D$ for specific detectivity of the specimens doped with 0.1 mol% $Yb_2O_3$ showed the highest value of $10.9{\times}10^{-9}Ccm/J$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.38-42
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• 2001

Electric and dielectric(Ba,Sr)$TiO_3$[BST] thin films for emtal-Insulator-Semiconductor(MIS) capacitors have been studied. BST thin films wre deposted on p-Si(100) substrates bythe RF magnetron sputtering with tempratue range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of Al/BST/$SiO_2$/Si sandwich structure were evaluated ot redcue the leakage current density. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. In order to reduce the leakage current in MIS capacitor, high quality $SiO_2$ layer was deposited on bare p-Si substrate. Depending on the oxygen pressure and substrate temperature both positive and negative polarities of effective oxide charge in the MIS capacitors were evaluated. It is considered that the density of electronic states, generated at the BST/$SiO_2$/p-Si interface due to the asymmetric structure within BST/$SiO_2$/Si structure, and the oxygen vacancy content has influence on the behavior of oxide charge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.632-635
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

• Journal of the Korean earth science society
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• v.28 no.3
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• pp.324-342
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• 2007

This study reports petrography and geochemical characteristics of the basalt lava flows in Seongsan-Ilchulbong area, the easternpart of Jeju island, Korea, to understand the evolutionary processes of magma. Basalt lavas are classified into the Pyoseon-ri basalt and the Seongsan-ri basalt. The Pyoseon-ri basalt is dark-gray colored with many vescicles, and mainly consists of olivine, feldspar and rarely of clinopyroxene as phenocrysts. The Seongsan-ri basalt is largely aphanitic basalt and bright-gray colored, divided into two lava-flow units: lower lava flow (B1) and upper lava flow (B2) by the intercalated yellowish lapillistone and paleosol. The lavas plotted into sub-alkaline tholeiitic basalt and alkaline basalt series. The tholeiitic basalts have characteristically higher $SiO_2,\;FeO^T$, and CaO contents, but lower $TiO_2,\;K_2O,\;P_2O_5$ and other incompatible elements compared to the alkali basalts. The tholeiitic basalts have higher $SiO_2$ to the same MgO contents than the alkalic basalts. The contents of Ni, Cr, and MgO show a strong positive correlation, which indicates that low-MgO phases like plagioclase and titanomagnetite were important during the differentiation of magma. The contents of incompatible elements against that of Th show a strong positive correlation. The chondrite-nomalized REE patterns of tholeiitic and alkalic basalts are subparallel each other. LREEs contents of the former are lower than, but HREEs contents are similar to the latter. They both are similar to their K/Ba ratios. The primitive-mantle normalized spider diagram demonstrates that the contents of Ba and Th of all basaltic magma are enriched, and yet Cr, Ni are depleted. The tholeiitic and alkalic basalts may be originated from a different degree of the partial melting of the same mantle material source, and one shows a higher degree of the partial melting than the other.