• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.158-162
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• 1997

In this paper, the electrical and dielectrical properties were investigated in Pb(Zr,Ti)O$_3$-Pb(Mn,Nb)O$_3$ ceramics which are manufactured with the substitution of Ba in site Pb. In older to increase the del and Kp , Ba was substitued to site Pb from 0 to 0.1 by 0.02 mol%. As the Ba substitution is increased, dielectric constant is increased and electricmachanical coupling factor showed the maximum value at Ba 0.06mol% and the mechanical qualify factor is decreased and the tetragonality and the grain size are decreased as the Ba substitution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.356-360
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• 2002

The piezoelectric properties of $0.05Pb(Al_{0.5}Nb_{0.5})O_3-0.95Pb(Zr_{0.52}Ti_{0.48})O_3+0.7wt%Nb_2O_5+o.5wt%MnO_2$ ceramics with the additive of BaCO$_3$were investigated. As the addition of BaCO$_3$increased from 0 to 0.4 wt%, the dielectric constant ($\epsilon^T _{33}$), piezoelectric constant ($d_33$), electromechanical coupling factor ($k_p$), and mechanical quality factor ($Q_m$) increased, while the dielectric loss ($tan\delta$) decreased. The highest piezoelectric and dielectric properties were observed at $1200^{\circ}C$ of the sintered temperature with 0.4 wt% of $BaCO_3$, and the properties of $d_33$, $k_p$, and $Q_m$ were 339 pC/N, 60% and 1754, respectively.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.333-338
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• 2000

$Ba_{0.7}Sr_{0.3}TiO_3$(BST) thin films were deposited simultaneously on various electrodes and buffers by the sputtering technique. When the substrate temperature was varied, the BST thin film on each electrode showed good crystallinity above $550^{\circ}C$ as revealed by X-ray diffraction measurements. The surface morphology, determined by atomic force microscopy, indicated that the roughness of BST thin films on $RuO_2$was substrate dependent. However, BST thin films on Ru electrodes are smoother and showed no substrate dependence, probably because the precursor surface diffusion length was greater than the sinusoidal perturbations of the wavelength.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.93-95
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• 2011

In this study we tried to measure the effect of magnetic field on the dielectric properties of $BaTiO_3-MgFe_2O_4$ soft magnetic composite. Composites with different weight percents of ferroelectric and ferromagnetic phases were subjected to magnetic field in the order of 0 to 450 Oe and the variation of the dielectric properties was observed. The Variation of dielectric polarization was discussed in terms of Maxwell-Wagner type polarization in particulate composites.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.529-537
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• 1994

The principle of the Isothermal Capacitance Transient Spectroscopy[ICTS] were explained to measure the electronic trap levels in oxide ceramics. The measurement apparatus and the theory of the ICTS were described in detail. The trap energy evaluation was performed for the ZnO varistor and BaTiO3 ceramics. The grain boundary interface trap levels were detected at -5$0^{\circ}C$~6$0^{\circ}C$ in the case of ZnO varistor and PTCR samples, and the bulk trap levels were detected at 2$0^{\circ}C$~60~ in BaTiO3. The trap energy levels of the above samples could be directly determined by ICTS measurement.

• ETRI Journal
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• v.27 no.6
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• pp.677-684
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• 2005

A phased array antenna was fabricated using four-element ferroelectric phase shifters with a coplanar waveguide (CPW) transmission line structure based on a $Ba_{0.6}Sr_{0.4}TiO_3(BST)/MgO$ structure. Epitaxial BST films were deposited on MgO (001) substrates by pulsed laser deposition. To attain the large differential phase shift and small losses for a ferroelectric CPW phase shifter, an impedance-matching-part adding technique between the effective transmission line and connecting cable was used. The return loss and insertion loss for this techniqueadapted BST CPW device were improved with respect to those for a normal BST CPW device. For an X-band phased array antenna system consisting of ferroelectric BST CPW phase shifters, power divider, dc block, patch antenna, and programmed dc power, the steering beam could be tilted by $15^{\circ}$ in either direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.362-363
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• 2006

In this study, the filter was designed for tuning center frequency and fabricated using ($Sr,Ba)TiO_3$ ferroelectrics and $YBa_2CuO_7$ high temperature superconductor thin film. The best result in figure of merit was 35 when the $Ba_{0.5}Sr_{0.5}TiO_3$ thin film deposition temperature was $600^{\circ}C$, the post anneal condition was $600^{\circ}C$, 10min in 1atm, $O_2$. When using $20{\mu}m$ IDC pattern gap. The higher tunability was obtained than using $30{\mu}m$ pattern gap.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.1-6
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• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• Korean Journal of Crystallography
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• v.7 no.2
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• pp.165-174
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• 1996

The effects of Ba2+, Sr2+, and Ca2+-substitutions for Pb2+ at Pb(Zr0.52Ti0.48)O3 composition were studied for thier dielictric, piezoelectric, and aging properties. For relative dielectric constants and electromechanical coupling factors, the Ba2+-substituted composition was the highest and the Ca2+-substityed composition was the lowest. In the case of mechanical quality factors, the opposite behavior occurred. Time dependence of frequency for various ion-substituted compositions is similar to that of non-substituted composition. The piezoelectric properties after aging at high temperature was the worse than that after aging at room temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.