• 한국세라믹학회지
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• 제24권5호
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• pp.484-490
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• 1987

Diffusion coupling experiment was done to study expansion of body and soild reaction in BaCO3-TiO2 system. Specimen of BaCO3 and TiO2 was formed with Pt-mark's method. Each specimen was fired at interval of 25℃ from 900℃ to 1000℃ for 2hrs. After that, specimen was fixed with resin and polished. Product layers of specimen were observed with SEM and EDS. The result were following; 1. Diffusion component is Ba2+, which diffuse toward TiO2. 2. Large crack between layer of BaCO3 and Ba2TiO4 was generated because of difference of thermal expansion coefficient. 3. Ba2TiO4 is formed to TiO2 body by the reaction of BaTiO3 and BaO and its structure is very porous. 4. BaTiO3 changes immediately to Ba2TiO4 by the reaction of BaO. But BaTiO3 which formed by the reaction of TiO2 and Ba2TiO4 exsists as layer because the diffusion distance of Ba2+ is far.

• 자연과학논문집
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• 제8권1호
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• pp.61-69
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• 1995

$BaTiO_3$는 일반적으로 $BaCO_3$와 $TiO_2$의 고상반응으로 얻어지는데 BaO의 활성이 높고 이차상이 생성되므로 순수하게 합성하기가 어렵다. 순수한 $BaTiO_3$를 얻기 위해서 공침법, 가수분해법등이 연구되고 있으나 출발 원료가 비싸고 제조 공정상 문제로 고상반응으로 합성한 것과 별차이가 없다. 그래서 고상반응의 공정을 개선하는 연구가 다시 진행되고 있으며 본 연구에서도 $BaTiO_3$를 고상반응으로 합성할 때 물성에 좋지 않은 영향을 주는 이차상인 $Ba_2TiO_4$의 생성기구를 밝히고, 그것을 조절하려 했다. $BaTiO_3$의 이론조성중 Ba가 과잉인 영역에서는 $Ba_2TiO_4$가 $TiO_2$가 과잉인 영역에서는 $BaTiO_2O_5$와 $BaTiO_3O_7$이 소지의 팽창에 원인이 되었다. 환원에서 소결되는 $CeAIO_3$와 $BaTiO_3$계의 유전체는 공기중에서 $CeAIO_3$가 분해되고 이때 생성되는 $CeO_2$가 $BaTiO_3$의 전기적 물성에 큰 영향을 주었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.194-196
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• 2004

$BaTiO_3/SrTiO_3$ heterolayered thick films on the $Al_2O_3$ substrate by screen printing method with stacking periodicity. The stacking periodicity of $BaTiO_3/SrTiO_3$ heterolayer structure was varied from $(BaTi_O_3)_1/(SrTiO_3)_1$ to $(BaTi_O_3)_3/(SrTiO_3)_3$. The total thickness of the $BaTiO_3/SrTiO_3$ films was about $120{\mu}m$. There was an interdiffusion at the interface of the $BaTiO_3$ and $SrTiO_3$ layers. The dielectric constant of $BaTiO_3/SrTiO_3$ heterolayered thick films was increased with decreasing stacking periodicity of the $BaTiO_3/SrTiO_3$. The dielectric constant of the ($(BaTi_O_3)_1/(SrTiO_3)_1$ herterolayered thick films was about 1780.

• 대한화학회지
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• 제38권4호
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• pp.309-318
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• 1994

La$_2O_3$-변형 BaTi$O_3$의 안정한 결함구조와 단일상 영역을 X-선 회절분석기와 주사전자현미경을 사용하여 연구하였다. La$_2O_3$-변형 BaTi$O_3$의 안정한 결함구조는 La$^{3+}$ 이온이 격자구조내의 Ba$^{3+}$ 이온을 치환하고 Ti빈자리가 전하 불균형을 보상하기 위한 결함으로 생성된 [($Ba^x_{Ba})_{1-2x}(La{\cdot}_{Ba})_{2x}][Ti^x_{Ti})_{1-x/2}(V""_{Ti})_{x/2}]O_3$이다. 안정한 결함구조가 형성되도록 BaTi$O_3$에 La$_2O_3{\cdot}3/2TiO_3$를 혼입할 때 단위격자는 약 3 mol%가 혼입될 때부터 정방정에서 입방정으로 변하였고, 고용한계는 약 14 mol%이었다. La2$O_3{\cdot}3/2TiO_2$를 고용한계 이상으로 혼입할 때는 이차상으로 La_4Ba_2Ti_5O){18}$가 생성되었다. La$_2O_3$-변형 BaTi$O_3$ 조성에서 BaO가 과량 존재하면 소결성이 나쁘지만, Ti$O_2$가 과량으로 존재하면 액상소결에 의하여 소결성이 좋아짐을 확인할 수 있다.

• 한국세라믹학회지
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• 제35권11호
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• 한국세라믹학회지
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• 제35권8호
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• pp.775-782
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• 1998

This experiment is third study concerning BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} (Ln=Sm, Nd, Pr, La..) system which is known to show a high dielectric constant and Q value in microwave dielectric materials. The process of cry-stallization and the microwave dielectric properties of the specimens sintered at 1220-140$0^{\circ}C$ for 2 hr was investigated in the BaO-(Na,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} as well as BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system. The single phase BaPr2Ti5O14 and Ba(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}Ti5O14 was finally formed from the Pr2Ti2O7 (Nd, Pr)2Ti2O7 as a secondary phase in the BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} and BaO-(Nd, {{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system respectively The dielectric constant of the specimens sint-ered at 1280~131$0^{\circ}C$ showed the maximum value as 105(BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system) and 88 (BaO-(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system) and the Q values of them showed higher value than 1800 which are due to the maximum den-sity. However the dielectric properties of the specimens sintered at higher temperature than 131$0^{\circ}C$ were reduced due to the increases of pore which were resulted from the sudden grain growth.

• 한국세라믹학회지
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• 제36권12호
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• pp.1327-1334
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• 1999

Behaviors of abnormal expansion during calcination process of Ba2Ti9O20 ceramics and its related effects on the sintering characteristics were investigated as a function of precursors. When BaCO3 and TiO2 powders were used as starting materials. BaTi4O9 phase which has relatively large molar volume was formed drastically with abnormal ex-pansion during the calcination at 95$0^{\circ}C$ to 115$0^{\circ}C$ ON the contrary using BaTiO3 and TiO2 powders as starting materials led to retardation of the formation of BaTi4O9 phase and concurrently suppressed the abnormal expansion during cal-cination process. Especially the calcined powder of BaTiO3 and TiO2 had advantages in the densification and formation of Ba2Ti9O20 single phase in the sintering process.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.819-829
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• 1997

The microwave dielectric materials of the BaO-Nd$_2$O$_3$-TiO$_2$and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system were synthesized by conventional ceramic processing and sintered 1220 to 140$0^{\circ}C$ for 2 hours respectively. Their crystallization and dielectric properties were examined. In the BaO-Nd$_2$O$_3$-TiO$_2$ and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system. Nd$_2$Ti$_2$O$_{7}$ and (Sm, Nd)$_2$Ti$_2$O$_{7}$ were observed as a second phase respectively. The maximum relative dielectric constant were 79,99 for the BaO-Nd$_2$O$_3$-TiO$_2$system and 105.07 for the BaO-(Sm,Nd)$_2$O$_3$-TiO$_2$system and their Q-value were over 2000 at 3GHz.GHz.

• 한국결정성장학회지
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• 제8권1호
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• pp.49-54
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• 1998

수열법에 의하여 $BaTiO_3$ 미립자를 합성하였다. 출발원료로는 $TiO_2$와 $Ba(OH)_2{\cdot}8H_2O$를 사용하고 과량의 $Ba(OH)_2{\cdot}8H_2O$를 투입함으로써 증류수만을 용매로 사용하여 $150^{\circ}C$의 저온에서 BaTiO3 미립자를 합성할 수 있었다. 합성된 입자의 형태는 구형에 가까운 부정형이었으며, 입자의 크기는 합성온도 및 Ba/Ti 원자비에 따라 변화되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.58-60
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• 2004

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated on alumina substrate by screening printing method. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The structural and electrical properties of $BaTiO_3/SrTiO_3$ heterolayered thick films were compared with pure $BaTiO_3$ and $SrTiO_3$ films. The (Ba,Sr)$TiO_3$ phase was appeared at the $BaTiO_3/SrTiO_3$ heterolayered thick films. The thickness of $BaTiO_3/SrTiO_3$ heterolayered thick film, obtained by one printing, was about $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ heterolayered thick films were about 1964, 5.5% at 1KHz, respectively.