• 전기전자학회논문지
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• 제28권1호
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• pp.33-37
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• 2024

본 논문에서는 0.25 ㎛ 게이트 길이를 갖는 GaN HEMT 기술을 사용하여 개발한 X-대역 저잡음 증폭기 MMIC의 특성을 기술한다. 개발된 GaN 기반 X-대역 저잡음 증폭기 MMIC는 9 GHz ~ 10 GHz의 동작 주파수 대역에서 22.75 dB ~ 25.14 dB의 소신호 이득과 1.84 dB ~ 1.94 dB의 잡음지수 특성을 나타내었다. 입력 반사 손실 특성과 출력 반사 손실 특성은 각각 -11.36 dB ~ -24.49 dB, -11.11 dB ~ -17.68 dB를 얻었으며 40 dBm (10 W)의 입력 전력에 성능 열화 없이 정상적으로 동작하였다. MMIC의 크기는 3.67 mm × 1.15 mm이다. 개발된 GaN 기반 저잡음 증폭기 MMIC는 X-대역의 다양한 응용에 적용 가능하다.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.7-12
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• 2017

This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

• 한국분말재료학회지
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• 제28권3호
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• pp.259-266
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• 2021

The (Ga_1-xZn_x)(N_1-xO_x) solid solution is attracting extensive attention for photocatalytic water splitting and wastewater treatment owing to its narrow and controllable band gap. To optimize the photocatalytic performance of the solid solution, the key points are to decrease its band gap and recombination rate. In this study, (Ga_1-xZn_x)(N_1-xO_x) nanofibers with various Zn fractions are prepared by electrospinning followed by calcination and nitridation. The effect of the composition and crystallinity of electrospun oxide nanofibers on the morphology and optical properties of the obtained solid-solution nanofibers are systematically investigated. The results show that the final shape of the (Ga_1-xZn_x) (N_1-xO_x) material is greatly affected by the crystallinity of the oxide nanofibers before nitridation. The photocatalytic properties of (Ga_1-xZn_x)(N_1-xO_x) with different Ga:Zn atomic ratios are investigated by studying the degradation of rhodamine B under visible light irradiation.

• 한국전자파학회논문지
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• 제25권2호
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• pp.172-182
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• 2014

본 논문에서는 능동 위상 배열 레이더에 사용되는 X대역 반도체 송수신기의 설계와 측정 결과에 대해 기술한다. 기존의 50 W 이하의 X대역 송수신 모듈 대비, 단위 증폭 소자로 GaN 소자를 사용하여 증폭회로를 설계하여 고출력, 고효율의 성능을 구현하였다. 제작된 반도체 송수신기의 송신 출력은 200 W(53 dBm) 이상이며, 최장 펄스 폭은 20 us에서 펄스 평탄도는 0.4 dB를 만족한다. 최대 듀티 비는 20 %이다. 수신 이득은 26 dB, 잡음 지수는 4.5 dB의 수신 특성을 갖는다. 송신 출력에 의한 수신 경로 및 단위 증폭 소자의 손상을 방지하기 위한 구조를 적용하였다.

• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• 한국전자파학회논문지
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• 제28권1호
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• pp.1-9
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• 2017

본 논문에서는 한국전자통신연구원(ETRI)에서 구축한 $0.25{\mu}m$ GaN MMIC 공정 및 소자특성을 소개하고, 이를 이용한 X-대역 3 W GaN 전력증폭기 MMIC 설계 제작 결과를 논의한다. X-대역 동작에 적합한 GaN HEMT 소자를 선정하여 GaN 전력증폭기 MMIC를 1단으로 설계하고 제작하였으며, 이를 통하여 ETRI $0.25{\mu}m$ GaN MMIC 공정 및 특성을 평가하고 분석하였다. X-대역 GaN 전력증폭기 MMIC 제작 결과, 출력전력 3.5 W, 이득 10 dB 및 전력부가효율 35 % 특성을 얻었다.

• 한국자기학회지
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• 제5권5호
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• pp.408-411
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• 1995

Microstructure and magnetic properties of $Fe-Nd_{13.5}-Co_{15}-B_{6-8}Ga_{0-1}-Zr_{0.2-1}$ alloys during HDDR process were studied. $ZrB_{2}$ phase was detected and identified by X-Ray diffraction. Influence of Ga, Zr and Ga+Zr additions on phase relations at different stages of HDDR process was studied by X-ray diffraction and magnetic measurements.

• Journal of Magnetics
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• 제7권2호
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• pp.40-44
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• 2002

Crystallographic and magnetic properties of ;$LaFe_{1-x}Ga_xO_3$($\chi$= 0, 0.1, 0.3, 0.5, and 0.7) were studied using XRD and Mossbauer spectroscopy. The crystal structures were found to be orthorhombic and the lattice parameters $\alpha$, b, and c were found to decrease with increasing Ga substitution. M$\ddot{o}$ssbauer spectra were obtained at various absorber temperatures ranging from 20 K to 750 K. The M$\ddot{o}$ssbauer spectra were all sextets below $T_N$ and were all singlets above $T_N$. Asymmetric broadening of the M$\ddot{o}$ssbauer spectral lines at 20 K was explained by the multitude of possible environments for an iron nucleus. As the temperature increases to $T_N$, a systematic line broadening in M$\ddot{o}$ssbauer spectra was observed and interpreted to originate from different temperature dependencies of the magnetic hyperfine fields at various iron sites.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.168-171
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• 1988

The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.

• 한국전자파학회논문지
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• 제27권1호
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• pp.20-26
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• 2016

본 논문에서는 GaN-HEMT를 이용하여 X-대역에서 동작하는 이단으로 구성된 전력증폭기를 설계 및 제작하였다. 높은 전력 이득을 얻기 위해 간단한 구조의 중간 단 정합 네트워크를 통해 이단으로 구성하였다. 3D EM 시뮬레이션을 통하여 본드와이어 인덕턴스와 기생 캐패시턴스를 예측하였다. 본드와이어 인덕턴스를 줄임으로써 정합 네트워크의 Q(quality-factor)를 최소화하여 대역 특성을 향상시켰다. 제작된 전력증폭기는 40 V의 동작 전압을 인가하였으며, 8.1~8.5 GHz에서 16 dB 이상의 전력 이득, 42.5 dBm 이상의 출력 전력, 35 % 이상의 효율 특성을 나타냈다.