The Behavior of $BF_2$ Implanted Single Crystalline Si Substrates During the Formation of $TaSi_2$
($TaSi_2$ 형성시 단결정 실리콘 기판에 이온주입된 $BF_2$ 의 거동)
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- Journal of the Korean Institute of Telematics and Electronics A
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- v.28A no.10
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- pp.814-820
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- 1991