• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.291-291
• /
• 2009

ZnS:Mn/Cu,Cl 계 나노 형광체의 특성을 살펴보았다. 실험에서는 ZnS:Mn 과 ZnS:Cu,Cl 형광체 파우더를 이용하여 밀링을 통하여 분쇄하여 EL 소자를 제작하였다. 형광체 파우더를 볼밀에 $\Phi5mm$의 지르코나이 볼과 에탄올과 함께 넣고 2, 4, 6, 8, 10일간 밀링을 하였다. 밀링한 형광체 파우더를 SEM을 통하여 파우더의 사이즈를 관찰하였다. 또 이 파우더를 이용하여 EL 소자를 제작하였다. 소자의 구조는 기판은 알루미나 기판을, 하부 전극은 Au, 유전체는 $BaTiO_3$ 유전체 페이스트를 사용하였으며, 형광체 적층 후 ITO 전극을 스퍼터를 이용하여 증착하여 제작하였다. 제작한 소자를 이용하여 소자의 휘도 등 발광 특성을 살펴보았다.

• Bulletin of the Korean Chemical Society
• /
• 제31권10호
• /
• pp.2861-2866
• /
• 2010

We studied effects of the 11-Mercaptoundecylphosphoric-acid layer formation on gold surfaces that have the interactions with the titanium dioxide surface for design of gold- titanium dioxide distribution. The atomic force microscope (AFM) was used to measure forces between the surfaces as a function of the salt concentration and pH value. The forces were analyzed with the DLVO (Derjaguin-Landau-Verwey-Overbeek) theory, to evaluate the potential and charge density of the surfaces quantitatively for each salt concentration and each pH value. The interpretation for the evaluation was performed with the law of mass action and the ionizable groups on the surface.

• Journal of the Speleological Society of Korea
• /
• 제74호
• /
• pp.23-31
• /
• 2006

(1) Kaeusetgul Cave in Kimnyong-Ri, Jeju-Do, Korea. Kaeuset-gul Cave (KC) is situated in NNE area of the Manjang-gul cave (125m a.s.l.). Kaeuset-gul Cave lies at $126^{\circ}45'22"$ E in longitude and $33^{\circ}33'09"$ N in latitude. The coast belong Kimnyeong-Ri, Kujwa-eup, Jeju-Do. Altitude of the cave-entrance is 10m and length of the cave is 90m. Lava hand-specimens of KC are studied by X-ray fluorescence analysis (XRF). Average major chemical components of specimens from KC is as follows (wt.%); $SiO_2=47.03$, $TiO_2=3.16$, $Al_2O_3=18.41$, FeO*=13.53, MnO=0.14, MgO=5.05, CaO=8.66, $Na_2O=2.81$, $K_2O=0.67$, $P_2O_5=0.55$ in KC. Polarizing microscopic studyindicates that these specimens are described of alkali-basalt. (2) Tachibori Fuketsu (Cave) in Shizuoka Prefecture, Fuji Volcano, Japan Tachibori Fuketsu lies attoward the south in skirt of the Fuji volcano, $138^{\circ}42'04"$ east longitude and $35^{\circ}18'00"$ north latitude. The location of cave entrance is 2745, Awakura, Fujinomiya-shi, Shizuoka Prefecture. The above sea level and length of Tachibori Fuketsu are 1,170m and 82m. Average major chemical components of specimens from cave areas follows (Total 100 wt.%) ; ($SiO_2$=50.52, $TiO_2$=1.69, $Al_2O_3$=15.47, FeO*=13.13, MnO=0.20, MgO=5.97, CaO=9.17, $Na_2O$=2.52, $K_2O$=0.94 and $P_2O_5=0.40).$ Polarizing microscopic study indicates that these specimens may belong to tholeiite-basalt series. According to polarizing microscopic study, Au (Augite), P1 (Plagioclase), and O1 (Olivine) are contained as phenocryst minerals. (3) Gorely Cave in Kamchatka Peninsula, Russia Gorely caldera is located at the southeastern part of Kamchatka Peninsula, about 75km southwest of Petropavlovsk-Kamchatskiy.. Gorely lava caves are situated in NHE area of Mt. Gorely volcano (1829m a.s.1.). One of lava cave (Go-9612=K-1) lies at $158^{\circ}00'22"$ east longitude and $52^{\circ}36'18"$ north latitude. The elevation of cave entrance is about 990m a.s.1. and the main cave extends in the NNW direction for about 50m by 15m wide and 5m in depth. The cave of K-3is near the K-1 cave. "@Lava hand-specimens K-1 and K-3 caves are studied by X-ray fluorescence analysis and polarizing microscopic observation. Average major chemical components of specimens from these caves are as follows (wt.%) ;($SiO_2$=55.12, $TiO_2$=1.25, $Al_2O_3$=16.07, T-FeO* =9.41, MnO=0.16, MgO=5.01, CaO=7.21, $Na_2O$=3.39, $K_2O$=1.92, $P_2O_5$=0.45) and these values indicate that the Gorely basaltic andesite belong to high alumina basalt. Polarizing microscopic study indicates that these specimens are described of Augite andesite.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.247.1-247.1
• /
• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제22권9호
• /
• pp.776-780
• /
• 2009

In this study, the opto-electric properties of EL devices with PMN dielectric layer with variation of firing tempereature were investigated. For the PMN dielectric layer process, the paste was prepared by optimization of quantitative mixing of PMN powder, $BaTiO_3$, Glass Frit, $\alpha$-Terpineol and ethyl cellulose. The EL device stack consists of Alumina substrate ($Al_2O_3$), metallic electrode (Au), insulating layer (manufactured PMN paste), phosphor layer (ELPP- 030, ELK) and transparent electrode (ITO), which is well structure as a thick film EL device. The phase transformation properties of PMN dielectric with various firing temperatures of $150^{\circ}C$ to $850^{\circ}C$ was characterized by XRD. Also the opto-electric properties of EL devices with different firing temperature were investigated by LCR meter and spectrometer. We found the best opto-electric property was obtained at the condition of $550^{\circ}C$ firing which is 3432.96 $cd/m^2$ at 1948.3 pF Capacitance, 40 kHz Frequency, 40% Duty, Vth+330 V voltage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.176.2-176.2
• /
• 2014

In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제34권1호
• /
• pp.73-77
• /
• 2021

Inorganic-organic hybrid perovskite solar cells have demonstrated considerable improvements, reaching 25.5% of certified power conversion efficiency in 2020 from 3.8% in 2009. In normal structured perovskite solar cells, TiO2 electron-transporting materials require heat treatment process at a high temperature over 450℃ to induce crystallinity. Inverted perovskite solar cells have also been studied to exclude the additional thermal process by using [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as a non-oxide electron-transporting layer. However, the drawback of the PCBM layer is a charge accumulation at the interface between PCBM and a metal electrode. The impact of bathocuproin (BCP) buffer layer on photovoltaic performance has been investigated herein to solve the problem of PCBM. 2-mM BCP-modified perovskite solar cells were observed to exhibit a maximum efficiency of 12.03% compared with BCP-free counterparts (5.82%) due to the suppression of the charge accumulation at the PCBM-Au interface and the resulting reduction of the charge recombination between perovskite and the PCBM layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
• /
• pp.24-24
• /
• 1998

반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 한국정밀공학회 2004년도 추계학술대회 논문집
• /
• pp.881-885
• /
• 2004

We report a method for making a device on which semi-conducting single-walled carbon nanotubes are attached selectively between two metal electrodes. This method is divided two processes. First we can connect a rope of single-walled carbon nanotubes(SWNTs) between two electrodes using the electric field. But a SWNTs' rope obtained by the first process was composed of a few of metallic and semi-conducting SWNTs together. The second process is to burn the metallic and semi-conducting nanotubes through applying a voltage. As a result, we can obtain a semi-conducting SWNT device. To make the patterned electrodes, we deposited $SiO_2$(150nm) on a wafer. After then, we made a patterned samples with Ti(200 $\AA$)/Au(300$\AA$). We empirically obtained a electric condition 0.66 $V_{pp}$ /${\mu}{\textrm}{m}$@5MHz. From this result, we verified that most of current go through the metallic nanotubes in this device. When we apply DC voltage between two electrodes, the metallic carbon nanotubes are burnt. Finally, we can obtain a semi-conducting nanotube device which we desire to make. We got the I-V characteristic graph which has shown the semi-conducting property. We hope to apply to the various applications using this selective semi-conducting carbon nanotube deposition method.ethod.

• Korean Journal of Metals and Materials
• /
• 제50권2호
• /
• pp.152-158
• /
• 2012

The effect of current waveform on Cu filling into TSV (through-silicon via) and the bottom-up ratio of Cu were investigated for three dimensional (3D) Si chip stacking. The TSV was prepared on an Si wafer by DRIE (deep reactive ion etching); and its diameter and depth were 30 and $60{\mu}m$, respectively. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. The current waveform was varied like a pulse, PPR (periodic pulse reverse) and 3-step PPR. As experimental results, the bottom-up ratio by the pulsed current decreased with increasing current density, and showed a value of 0.38 on average. The bottom-up ratio by the PPR current showed a value of 1.4 at a current density of $-5.85mA/cm^2$, and a value of 0.91 on average. The bottom-up ratio by the 3-step PPR current increased from 1.73 to 5.88 with time. The Cu filling by the 3-step PPR demonstrated a typical bottom-up filling, and gave a sound filling in a short time.