• 제목/요약/키워드: $Ar^+$ Ion

검색결과 635건 처리시간 0.028초

$LiNbO_3$:MgO 결정에서 광굴절 격자의 회절 특성 (Diffractive characteristics of the photorefractive gratings in $LiNbO_3$:MgO)

  • 이재철;장지웅;김준태;신승호
    • 한국광학회지
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    • 제10권5호
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    • pp.391-395
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    • 1999
  • 4% 물의 MgO가 도핑된 광굴절 $LiNbO_3$ 결정에 기록된 광굴절 격자의 회절 효율과 응답시간을 측정하였다. 이 실험에는 고출력 펄스 Nd:YAG 레이저(Q-switch mode,$\lambda$=532nm)와 연속 발진 아르곤 이온 레이저($\lambda$=514.5nm)가 사용되었다. 두 종류의 레이저 광속에 대한 실험에서 광학계의 배열을 동일하게 하고 2광파 혼합 조건에서 레이저 광속의 세기를 1.6~100W/$\textrm{cm}^2$까지 변화시켜가며 최대 회절 효율과 기록 및 소거시의 응답시간을 측정하였다. 두 실험에서 얻은 결과를 비교하고 분석 하였다.

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Resistance Distribution in Thin Film Type SFCL Elements with Shunt Layers of Different Thicknes

  • Kim, Hye-Rim;Hyun, Ok-Bae;Lee, Seung-Yup;Yu, Kwon-Kyu;Kim, In-Seon
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권2호
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    • pp.41-45
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    • 2003
  • Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

IBASD법으로 제조된 BNN 박막의 결정화 및 전기적 특성 (Crystallization Behavior and Electrical Properties of BNN Thin Films prepared by IBASD Methods)

  • 우동찬;정성원;이희영;조상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.489-493
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    • 2004
  • [ $Ba_2NaNb_5O_{15}$ ]은 orthorhombic tungsten bronze 결정구조를 갖는 강유전체로서, 단결정의 경우 $LiNbO_3$에 비해 우수한 비선형 전광계수 값을 나타내는 것으로 알려져 있으며, 또한 주목할만한 초전, 압전, 강유전특성을 나타내고 있다. 본 연구에서는 다른 강유전체박막에 비하여 상대적으로 연구가 덜 이루어진 BNN 박막을 세라믹 타겟을 사용하여 이온빔 보조 증착법을 사용하여 제조하였으며, $Ar/O_2$ 분위기에서 증착된 BNN 박막에 대한 결정화 및 배향 특성을 고찰하였고, 이에 따른 전기적 특성의 변화를 살펴보았다. 연구에 사용된 기판은 $Pt(100)/TiO_2/SiO_2/Si(100)$이었으며, 이온빔 보조 증착법에서 보조 이온빔의 에너지를 $0{\sim}400eV$로 변화 시키며 BNN 박막을 증착한 후, 열처리하였다. BNN 박막의 전기적 특성은 MFM 박막 커패시터의 형태로 제조하여 강유전 특성에 대해 살펴보았다.

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광열변위의 위상곡선을 이용한 금속재료의 열확산계수 측정 (Thermal Diffusivity Measurement for Metal Using Phase Curve of Photothermal Displacement)

  • 이은호;이광재;유재석
    • 대한기계학회논문집B
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    • 제25권1호
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    • pp.47-53
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    • 2001
  • As the technology has developed and new materials have been produced, it is important to measure the thermal diffusivity of material and to predict the heat transfer in the solid subject to thermal processes. This measurement can be done in a non-contact way using photothermal displacenent spectroscopy. In this study, photothermal displacement method was used to measure the thermal diffusivity quantitatively. The specimens used in this study were the pure materials. The Ar-ion laser was used as an energy source and the periodical deformation induced by this pump laser was detected by the He-Ne laser. The magnitude and the phase angle of deformation gradient were measured. The thermal diffusivity was obtained by analyzing the phase angle of deformation gradient. As the result, comparing with the literature value, the thermal diffusivities of materials measured were showed about 2% error.

생체 다공성 매질에서 분자 확산 측정을 위한 영상 기반 형광 광표백 기법 개발 (Development of Image-based Fluorescence Photobleaching Technique for Measuring Macromolecule Diffusion in Biological Porous Medium)

  • 이동희;이정훈;박춘호;김중경
    • 한국가시화정보학회지
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    • 제7권1호
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    • pp.9-13
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    • 2009
  • Fluorescence recovery after photobleaching (FRAP) has been widely used for the measurement of molecular diffusion in living cells and tissues. We developed an image-based FRAP (iFRAP) technique using a modified real-time microscope and a 488 nm Ar-ion laser. A fractional intensity curve was obtained from the time-lapse images of fluorescence recovery in the bleached spot to determine the diffusion coefficient of fluorescently labeled macromolecules in porous medium. We validated iFRAP through experiments with agar gels (0.5% and 1.5% w/v) containing FITC-Dextrans (10, 70 and 500 kDa MW). Further validation was performed by a Monte Carlo approach, where we simulated the three-dimensional random walk of macromolecules in agar gel model. Diffusion coefficients were deduced from the mean square displacement curves and showed good agreements with those measured by iFRAP.

그라비아 인쇄물의 망점 형성을 위한 포토레지스터 코팅층의 레이저 직접 페터닝 (Laser Direct Patterning of Photoresist Layer for Halftone Dots of Gravure Printing Roll)

  • 서정;이제훈;한유희
    • 한국레이저가공학회지
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    • 제3권2호
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    • pp.35-43
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    • 2000
  • Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

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Gravure Halftone Dots by Laser Direct Patterning

  • Jeong Suh;Lee, Jae-Hoon
    • International Journal of Precision Engineering and Manufacturing
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    • 제3권1호
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    • pp.26-32
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    • 2002
  • Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

유기막 위에 증착된 저온 ITO(Indium Tin Oxide) 박막의 식각특성

  • 김정식;김형종;박준용;배정운;이내응;염근영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.99-99
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    • 1999
  • 투명전도막인 Ito(Indium Tin Oxide)는 flat panel display 와 solar cell 같은 optoelectronic 이나 microelectronic device에서 널리 이용되어 지고 있다. 현재 상용화되고 있는 거의 대부분의 ITO 박막은 sputtering법에 의해 제조되고 있으나 공정상의 이유로 15$0^{\circ}C$이상의 기판온도가 요구되어진다. 그런, 실제 display device 제조공정에서는 비정질 실리콘 박막이나 유기막 위에 ITO박막을 제작할 필요성이 증대되어 지고 있고, 또한 다른 전자소자에 있어서도 상온 ITO 박막 형성 공정에 대한 필요성이 증대되고 있다. 이러한 이유로 본 실험에서는 IBAE(Ion Beam Assisted Evsporation)을 이용하여 저온 ITO박막을 유기막 위에 증착하는 공정에 대한 연구를 수행하였다. 이렇게 증착된 ITO 박막의 결정성은 비정질이었다. 또한, 모든 display device 제작에는 식각공정이 필수인데 기존에 사용되고 있는 wet etching 법은 등방성 식각특성 때문에 미세 pattern 형성에 부적합?, 따라서 비등방성 식각에 용이한 plasma etching법을 사용하여 저온 증착된 ITO 박막의 식각특성을 알아보았다. 실험에 사용된 식각장비는 자장 강화된 유도결합형 플라즈마 식각장비(MEICP)를 사용하였으며, 13.56MHz의 RF power를 사용하였다. 식각조건으로 source power는 600W~1000W, 기판 bias boltage는 -100V~-250V를 가하였으며, Ar, CH4, O2, H2, BCl3의 식각 gases, 5mTorr~30mTorr의 working pressure 변화 그리고 기판 온도에 따른 식각특성을 관찰하였다. ITO 가 증착된 기판으로는 유기물 중 투명전도성 박막에 기판으로서 사용가능성이 클 것으로 기대되어지는 PET(polyethylene-terephtalate), PC(polycarbonate), 아크릴을 사용하여 기판 변화가 식각특성에 미치는 영향에 대해서 각각 관찰하였다. 식각속도의 측정은 stylus profiler를 이용하여 측정하였으며 식각후에 표면상태는 scanning electron spectroscopy(SEM)을 이용하여 관찰하였다.

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Pool 화재에서의 표면 냉각에 의한 소화 (Extingushiment by the Colling Effect of the Fuel Surface with Pool Fires)

  • 한용식;김명배;신현동
    • 한국화재소방학회논문지
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    • 제11권4호
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    • pp.15-23
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    • 1997
  • A series of measurements and visualization to investigate the extingushiment of water sprays with pool fires is presented. Fire source is a small-scale pool burner with methanol, ethanol and gasoline. Measurements of temperature, O2, CO2, and CO concentrations along the plume centerline are carried out to observe pool structures without water sprays. Visualization by the Ar-ion laser sheet flow pattern of droplets of the sprays above the pool fires. It is observed than in the case of methanol and ethanol, water sprays continuously penetrate into the center of fuel surfaces. The gasoline pool fire allows intermittent penetration of water sprays because of pulsating characteristics of the gasoline flame. To evaluate the cooling effect of the fuel surface by the sprays, the temperature was measured at the fuel surface. As soon as the mists reach the fuel surface of methanol and ethanol, the temperatures of the fuel surface decrease rapidly below the boiling point, and then the fires are extinguished. Due to the application of mist upon the gasoline fire, though the fuel temperature decrease abruptly at the time of the injection, such a repid decrease do not continue till the extinction point.

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고밀도 플라즈마에서 규소산화막을 마스크로 이용한 백금박막의 페터닝 (Patterning of Pt thin films using SiO$_2$mask in a high density plasma)

  • 이희섭;이종근;박세근;정양희
    • 전자공학회논문지D
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    • 제34D권3호
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    • pp.87-92
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    • 1997
  • Inductively coupled Cl$_{2}$ plasma has been studied to etch Pt thin films, which hardly form volatile compound with any reactive gas at normal process temperature. Low etch rate and residue problems are frequently observed. For higher etch rate, high density plasma and higher process temperature is adopted observed. For higher etch rate, high density plasma and higher process temperature is adopted and thus SiO$_{2}$ is used as for patterning mask instead of photoresist. The effect of O$_{2}$ or Ar addition to Cl$_{2}$ was investigated, and the chamber pressure, gas flow rate, surce RF power and bias RF power are also varied to check their effects on etch rate and selectivity. The major etching mechanism is the physical sputtering, but the ion assisted chemical raction is also found to be a big factor. The proposs can be optimized to obtain the etch rate of Pt up to 200nm/min and selectivity to SiO$_{2}$ at 2.0 or more. Patterning of submicron Pt lines are successfully demonstrated.

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