• 한국표면공학회지
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• 제42권5호
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• pp.220-226
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• 2009

Cr-O-N coatings having different oxygen contents were deposited on Si wafer and SUS 304 substrates by an arc ion plating technique using Cr target in $Ar/O_2/N_2$ gaseous atmosphere. As increasing oxygen content in the coating, the microstructure of Cr-O-N coating changed from polycrystalline having NaCl structure to amorphous structure. Further increase of oxygen content resulted in phase transformation from amorphous to rhombohedral structure. From the variations of d value and average grain size, it was revealed that the maximum solubility of oxygen in Cr-O-N coating was about 21 at.%. And the maximum micro-hardness of 2751HK was obtained in this composition. The lowest friction coefficient was measured in the coating having 34.8 at.% of oxygen. However, more narrow width of wear track was found in the coating having 30.1 at.% of oxygen.

• 한국연소학회지
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• 제23권1호
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• pp.1-7
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• 2018

The effect of LII interference on the measurement of LIF signals from PAH in a diffusion flame has been investigated. Argon-ion laser at 488 nm was vertically or horizontally polarized, and irradiated to the centerline of the flame at varying flame height. Signals from PAH-rich regions measured at 515 nm were mostly LIF signals, however, signals from soot-rich regions were determined to be mixed with Mie scattering signals and/or LII signals. Signals measured 1 mm above the excitation height were mostly LII signals from soot particles. The results show that a quantitative determination of the LIF's contribution to the measured signals would be difficult as long as the experimental setup described here is used for the regions where PAHs and soot particles exist together.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.229-232
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• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

• 전자공학회논문지A
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• 제30A권8호
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• pp.42-48
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• 1993

Ar ions were implanted at 1 MeV into (100)Cz Si wafers with dose of 1 * 10$^{15}$ ions/cm$^{2}$. Damage induced by high energy implantation and its annealing behavior during rapid thermal annealing for 10sec at temperatures from 550 to 1100${\circ}C$ were investigated by crosssection transmission electron microscopy study. It can be clearly seen from the observation that the SPE(Solid Phase Epitaxy) regrowth of the buried amorphous layer induced by ion implantation proceeds from both upper and lower amorphous/crystalline (a/c) interfaces, and the activation energy for SPE from interfaces were both 1.43eV. Misfit dislocation where two interfaces met was formed and it coalesced into the hair pin dislocation in the upper regrown region. At the higher temperature after annealing out of the misfit dislocation, hair pin dislocations showed considerable drop in its bandwidth. However, they were not disappeared even at the temperature 1100${\circ}C$ with the end of range dislocation loops which were formed at the original lower a/c interface.

• 한국광학회지
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• 제7권2호
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• pp.174-180
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• 1996

광학박막의 미세구조가 그것이 증착된 유리기판의 열확산도에 미치는 영향을 조사하기 위하여 Ar-ion레이저를 광원으로 하는 교류열량계를 직접 제작하여 광학박막으로 널리 쓰이는 ZnS박막의 증착속도를 각각 5.angs./s, 10.angs./s, 20.angs./s, 40.angs./s으로 하여 유리기판 위에 제작한 후 시편의 면에 평행한 방향의 열확산도를 측정한 결과 시편의 온도가 증가할수록 열확산도는 감소하였고 증착속도가 20.angs./s일 때 열확산도가 가장 크며 증착속도에 따라 최대 약 27%의 차이를 나타내었다.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.701-705
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• 2007

The incorporation of N in a-C film is able to improve the friction coefficient and the adhesion to various substrates. In this study, a-C:N films were deposited on Si and steel substrates by closed-field unbalanced magnetron (CFUBM) sputtering system in $Ar/N_2$ plasma. The lubricant characteristics was investigated for a-C:N deposited with total working pressure from 4 to 7 mTorr. We obtained high hardness up to 24GPa, friction coefficient lower than 0.1 and the smooth surface of having the extremely low roughness (0.16 nm). The physcial properties of a-C:N thin film are related to the increase of cross-linked $sp^2$ bonding clusters in the film. However, the decrease of hardness, elastic modulus and the increase of surface roughness, friction coefficient with the increase of $N_2$ partial pressrue might be due to the effect of energetic ions as a result of the increase of ion bombardment with the increase of ion density in the plasma.

• 해양환경안전학회지
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• 제17권2호
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• pp.155-160
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• 2011

현재 지구온난화 등의 환경문제로 인해 각종 산업분야에서 정량화에 대한 요구가 증대되어 해양산업에도 그 수요가 증가하고 있는 실정이다. 따라서 본 연구에서는 차세대 경량화 재료인 마그네슘이 활용되기 위해서 반드시 극복해야할 가장 중요한 특성인 내식특성에 대하여 고찰하고, 그 내식특성 향상을 위한 마그네슘 박막의 Morphology나 결정배향성의 영향을 해명하고자 하였다. 실험결과로부터 제작한 Mg 박막의 전기화학적 내식특성은 Ar 가스압이 높은 조건에서 제작한 막일수록 내식특성이 우수하였다. 이러한 경향은 표면 및 단면의 Morphology와 결정배향성과의 상관관계를 통하여 설명 가능하였다.

• 한국표면공학회지
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• 제29권5호
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• pp.415-423
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• 1996

Thin film technologies for fabricating SQUIDs involve etching and deposition procedures with the proper substrate materials and $YBa_2Cu_3O_{7-d}$ (YBCO) as the high $T_c$ superconductor. YBCO were prepared on various substrates of MgO, $SrTiO_3$, and $LaAlO_3$ by using off-axis magnetron sputtering methods and annealing in-situ. The parameters of film fabrication processes had been optimized to yield good quality films in terms of the critical temperature $T_c$ and the critical current density $J_c$. The optimized processes yielded $T_C$>90K along with $J_c$>$10_6A$$extrm{cm}^2$ at 77K and>$2\times10_7A/Cm^2$ at 5K. We fabricated step-edge type dc-SQUIDs and directly coupled magnetometers, producing step edges on MgO(100) substrates by etching with Ar-ion beam, depositing YBCO material on them, then patterning them by using ion-milling technique. Circuitizing washer-shape SQUIDs to possess a pair of step-edge junctions of 2-5$\mu$ line width with a high angle>$50^{\circ}C$ , we examined their I-V characteristics thoroughly and Shapiro steps clearly as we irradiate microwaves of 8-20 GHz frequency.

• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• 분석과학
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• 제6권3호
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• pp.289-296
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• 1993

자연수 중 극미량 몰리브덴[Mo(VI)]을 분리 정량하기 위하여 Mo(VI)의 킬레이트이온을 이온쌍으로 만들어 유기용매로 상승 용매추출시키는 방법에 대해 검토하였다. 자연수 시료 100mL를 분별 깔때기에 취하였다. pH 4.0인 시료에 0.01M alizarin red S 용액 0.5mL를 가하여 Mo(VI)-ARS의 킬레이트이온을 형성시킨 다음, aliquat-336을 0.2% 되게 녹인 chloroform 10mL를 가해 30초 정도 격렬하게 흔들어 모든 킬레이트이온이 이온쌍을 형성하여 용매층으로 분배되도록 하였다. 90분간 방치하여 두 쌍이 완전히 분리되면 chloroform층을 받아서 520nm에서 흡광도를 측정하여 검정곡선법으로 Mo(VI)을 정량하였다. 이상의 과정에서 용액의 pH, alizarin red S와 aliquat-336의 가해 주는 양, 흔들어 주고 방치하는 시간 등과 같은 추출조건에 대해서 검토하였다. 실제 시료인 강물과 수돗물의 분석에 응용하였다. 이들 시료에 Mo(VI)을 일정량 가하여 분석한 회수율은 모두 99% 이상으로 본 방법이 정량적임을 확인하였다.