• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.185-185
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• 2012

최근 자연모사를 이용한 연구가 다양한 분야에 적용되고 있다. 특히 연 잎의 표면에서 나타나는 초발수 특성이 마이크로 나노 크기의 구조와 표면에너지를 제어하는 에피큐티클 왁스에 기인하다는 것이 밝혀지면서 이를 응용한 연구가 진행되고 있다. 본 연구는 알루미늄 표면처리로 마이크로와 나노 구조물을 형성하고 그 위에 발수 특성을 가진 물질을 증착하여, 발수성을 가지는 표면을 개발하였다. 알루미늄 표면에 마이크로 크기의 알루미나($Al_2O_3$) 분말을 이용한 블라스트(blast) 공정으로 표면에 마이크로 구조를 형성하고, Linear Ion Source(LIS)를 적용한 Ar 이온빔 에칭으로 나노 구조를 형성하였다. FE-SEM 분석을 통해 수~수십 마이크로 구조 위에 나노 크기의 구조가 형성 된 것을 관찰하였다. 마이크로 나노 구조가 형성된 알루미늄의 표면에너지를 낮추기 위해 trimethylsilane(TMS) 및 Ar을 이용한 플라즈마처리로 표면에 기능성 코팅막을 형성하였다. 그 결과 TMS 발수 코팅하기 전에 비해 표면에너지가 $99.75mJ/m^2$에서 $9.05mJ/m^2$으로 급격히 낮아지고 접촉각 값이 $123^{\circ}$로 향상된 것을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.271-271
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• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• Journal of the Korean institute of surface engineering
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• v.29 no.2
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• pp.93-99
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• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• 한국연소학회:학술대회논문집
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• 2005.10a
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• pp.328-336
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• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.53-59
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• 2001

Surfaces of PTFE and PVDF were modified by ion-assisted reaction (IAR) in which 1 keV $Ar^{+}$ ions were irradiated on the surface of the polymer with varying ion dose in an oxygen gas environment, and Cu, Pt, Al and Ag thin films were deposited on the modified polymers. Wettability of the modified polymers was largely improved by the formation of hydrophilic groups due to chemical reaction between polymer surface and the oxygen gas during IAR. The change in wettability in the modified polymers was also related to the change in surface morphology and roughness. Adhesion between metal films and polymers modified by IAR was significantly improved, so that no detachment was possible in the $Scotch^{TM}$ tape test. The increase of adhesion strength between the metal film and the modified PVDF was mainly attributed to the formation of hydrophilic groups, which interacted with the metal film. In the case of the modified PTFE, the enhanced adhesion to metal film could be explained by the change in surface morphology together with the formation of hydrophilic groups. The electrical properties of the metal films on the modified polymers were also investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.209-219
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• 1993

Evaporated Al/Pd thin films were irradiated with various doses to produce intermetallic compounds. In order to study the first phase formation and phase sequence, RBS and TEM studies have been used. It was found that the initial phase formed by irradiation of $5{\times}10^{15}Ar^+/cm^2$ was $Al_3Pd_2$, while $1.5{\times}10^{16}Ar^+/cm^2$ gave the subsequent phase of AlPd. This phenomenon was analysed using effective heat of formation (${\Delta}$H') model. The experimental results agree with that predicted by effective heat of formation model. This model has been extended to predict the first phase formation and phase sequence by ion beam mixing in metal/Si systems as well as metal-metal systems.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.93-98
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• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)