• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.414-414
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• 2007

In this study, Liquid Crystal (LC) alignment and tilt angle generation in Nematic Liquid Crystal (NLC) with negative dielectric anisotropy on the homeotropic PI surface with new ion beam exposure are reported. Also. high density of ion beam energy (DuoPIGatron type Ar ion gun) is used in this study. The tilt angle of NLC on the homeotropic Polyimide (PI) surface for all incident angles is measured about 38 degree and this has a stabilization trend. And the good LC alignment of NLC on the PI surface with ion beam exposure of $45^{\circ}$ incident angle was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of $45^{\circ}$ had a tendency to decrease as ion beam energy density increase. The tilt angle could be controlled from verticality to horizontality. Also, the LC aligning capabilities of NLC on the homeotropic PI surface according to ion beam energy has the goodness in case of more than 1500 eV. Finally. the superior LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved. For OCB(Optically Compensated Bend) mode driving, we can need pretilt angles control for fast response time. In this study, We success pretilt angles control. Consequently, this result can be applied for OCB mode.

• Journal of Information Display
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• 제3권1호
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• pp.17-21
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• 2002

Measurement of the ion-induced secondary electron emission coefficient (${\gamma}_i$) for insulating films is hampered by an unavoidable charging problem. Here, we demonstrate that a pulsed ion beam technique is a viable solution to the problem, allowing for accurate measurement of ${\gamma}_i$ for insulating materials. To test the feasibility of the pulsed ion beam method, the secondary electron emission coefficient from n-Si(100) is measured and compared with the result from the conventional continuous beam method. It is found that the ${\gamma}_i$ from n-Si(100) by the ion pulsed beam measured to be 0.34, which is the same as that obtained by continuous ion beam. However, for the 1000 A $SiO_2$ films thermally deposited on Si substrate, the measurement of ${\gamma}_i$ could be carred out by the pulsed ion method, even though the continuous beam method faced charging problem. Thus, the pulsed ion beam is regarded to be one of the most suitable methods for measuring secondary electron coefficient for the surface of insulator materials without experiencing charging problem. In this report, the dependence of ${\gamma}_i$ on the kinetic energy of $He^+$ is presented for 1000 ${\AA}$ $SiO_2$ films. And the secondary electron emission coefficient of 1000 ${\AA}$ MgO e-beam-evaporated on $SiO_2/Si$ is obtained using the pulsing method for $He^+$ and $Ar^+$ with energy ranging from 50 to 200 eV, and then compared with those from the conventional continuous method.

• 한국진공학회지
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• 제12권1호
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• pp.16-19
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• 2003

실온에서 p-InP (100) 위에 이온빔 증착법으로 Ni 박막을 성장하였다. Ni 박막의 이차전자방출계수(${\gamma}$)와 일함수를 결정하기 위하여 Ne, Ar, $N_2$, Xe 이온원을 사용하여 가속전압에 따른 $\gamma$를 측정하였다. 여러 가지 기체와 집속이온빔장치의 가속전압에 따른 $\gamma$결과로부터 Ni 박막의 일함 수를 결정하였다. p-InP (100) 위에 성장한 Ni 박막의 일함수는 5.8 eV ~ 5.85 eV 이었다. 실험을 통하여 얻어진 결과들은 실온에서 p-InP (100) 위에 성장한 Ni 박막의 전자적 성질에 관한 중요한 정보를 제공하고 있다.

• 전자공학회논문지A
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• 제32A권1호
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• pp.152-158
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• 1995

Eteching characteristics of the Indium Tin Oxide (ITO), which is transparent conductor, was investigated with CH4/H2 and Ar as etching gases for the Reactive Ion Etching (RIE). With CH4/H2 for the etching gas, the highly selective etching characteristics for the ITO on GaAs was obtained. It was examined that the dominant etching parameter for the selective etchning of ITO on GaAs structure was the chamber pressure. But, the etching selectivity for ITO on InP was poor eventhough we tried systematic etching. RIE etching conditins using CH4/H2 gas was limited due to the formation of polymer on the substrates. In the case of Ar gas for the reactive gas, the selectivity of ITO on BaTiO3 was above 10. The etch rete of ITO was more sensitive to the etching parameters than that of BaTiO3, which was almost constant with different etching parameters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.132-132
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• 1998

Ion bombardment in the keV range is known to induce drastic chemical modifications in organic and inoranic molecular comppounds. A degrading effects in orgainc materials such as the release of ppolymer compponents and the chemistry of the iradiation pprocess have been observed. The work to be described was carried out in order to understand the irradiation effect better. The sampple(ppolyimide : Kappton ) Were irradiated by Ar+, Ne+, H+ ions and electrons (3 keV) to fluence ranging from ~1$\times$1015 to ~1$\times$1017 ions/$cm^2$ at room tempperature. The impplant was usually rastered over an area of a few $cm^2$ . These ion impplantation were carried out in an electron sppectrometer ESCA 5700 (ppHI Ltd) at a residual gas ppressure of ~5$\times$10-10 Torr. X-ray pphotoelectron sppectroscoppy(XppS) measurements were made using a monochromatized Al Kａ(1486.6 eV) excitation source. The pphotoemitted electrons were detected by hemisppherical analyser with a ppass energy of 23.5 eV. Core-level binding energies were referenced to the Fermi level. To avoid the charging effect it was used the neutralizer. We studied the irradiation effects on ppolyimide with Ar+, Ne+, He+ ions and electrons by XppS which 추 pprovide detailed information concerning the bonding-induced changes.

• 한국항공우주학회지
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• 제37권2호
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• pp.175-180
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• 2009

이 논문은 폴리머 기반의 전기 분무 장치를 만들기 위하여 이온빔 장치를 통하여 초소수성으로 가공 된 polytetrafluoroethylene(PTFE) 노즐을 사용하였다. 초소수성 표면을 만들기 위하여, PTFE 표면은 Ar과 $O_2$를 이용한 이온빔 공정 장치를 사용하였다. 최적의 표면 공정 조건은 Ar과 $O_2$ 유량 및 에너지 단위를 변화 시켜 얻을 수 있었다. 공정된 노즐의 표면 특성을 분석하기 위하여 접촉각 측정을 수행하였고, 표면의 형태적 분석을 위해 scanning electron microscope(SEM) 그리고 atomic force microscope(AFM) 측정을 하였다. 초소수성으로 공정된 노즐을 사용함으로써 보다 안정적이고 반복적인 전기 분무가 가능함을 확인 하였으며, 공정 된 노즐의 성능을 평가하기 위하여 외팔보와 이온빔으로 표면 처리 된 노즐 그리고 레이져 변위센서를 이용하여 마이크로 스케일의 추력을 측정하였다.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.35-39
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• 2019

Effect of Ge₂Sb₂Te₅ (GST) chalcogen composition on plasma induced damage was investigated by using Ar ions and F radicals. Experiments were carried out with three different modes; the physical etching, the chemical etching, and the ion-enhanced chemical etching mode. For the physical etching by Ar ions, the sputtering yield was obtained according to ion bombarding energy and there was no change in GST composition ratio. In the plasma mode, the lowest etch rate was measured at the same applied power and there was also no plasma induced damage. In the ion-enhanced chemical etching conditions irradiated with high energy ions and F halogen radicals, the GST composition ratio was changed according to the density of F radicals, resulting in higher roughness of the etched surface. The change of GST composition ratio in halogen plasma is caused by the volatility difference of GST-halogen compounds with high energy ions over than the activation energy of surface reactions.

• 대한전자공학회논문지SD
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• 제37권11호
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• pp.18-24
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• 2000

(Ba,Sr)$TiO_3$ 박막은 ULSI-DRAM 즉 1-4 Gbit급 DRAM용 셀(cell) 커패시터의 새로운 유전물질로 각광받고 있다. 본 연구에서는 ICP 장비에서 $BCl_3/Cl_2/Ar$ 플라즈마로 (Ba,Sr)$TiO_3$ 박막을 식각하였다. 이때 RF power/dc bias voltage는 600W/-250V, 반응로의 압력은 10mTorr 이었다. $Cl_2/(Cl_2+Ar)$은 0.2로 고정하였고, $BCl_3$ 가스를 첨가하면서 (Ba,Sr)$TiO_3$ 박막을 식각하였다. $BCl_3$ 가스를 10% 첨가하였을 때, $480{\AA}/min$으로 (Ba,Sr)$TiO_3$ 박막은 가장 높은 식각 속도를 나타내었다. $Cl_2/Ar$가스에 $BCl_3$의 첨가 비에 따른 Cl, BCl 및 B의 라디칼 밀도를 optical emission spectroscopy(OES)에 의해 구하였다. $BCl_3$를 10% 첨가하였을 때 Cl의 라디칼 밀도가 가장 높았다. (Ba,Sr)$TiO_3$ 박막의 표면반응을 규명하기 위하여 XPS 분석을 수행한 결과 이온 bombardment 식각이 Ba-O 결합을 파괴하고 Ba와 Cl의 결합형태인 $BaCl_2$을 제거하기 위하여 필요하다. Sr과 Cl의 결합의 양은 많지 않고, Sr은 주로 물리적인 스퍼터링에 의하여 제거된다. Ti와 Cl은 화학적으로 반응하여 $TiCl_4$ 결합형태로 용이하게 제거된다. 식각후 단면사진을 SEM을 통해 본 결과 식각단면이 약 65~70$^{\circ}$ 정도였다.

• 한국재료학회지
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• 제15권6호
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• pp.382-387
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• 2005

Polyvinylidene fluoride (PVDF) surface was irradiated and became superhydrophilic by low energy (180 eV) and high flux $(\~10^{15}/cm{\cdot}s)$ ion beam. As an ion source, a closed electron Hall drift thruster of $\phi=70mm$ outer channel size without grid was adopted. Ar, $O_2$ and $N_2O$ were used for source gases. When $N_2O^+$ and $O_2^+$ reactive gas ion beam were irradiated with the ion fluence of $5\times10^{15}/cm^2$, the wetting angle for deionized water was drastically dropped from $61^{\circ}\;to\;4^{\circ}\;and\;2^{\circ}$, respectively. Surface energy was also increased up to from 44 mN/m to 81 mN/m. Change of chemical component in PVDF surface was analyzed by x-ray photoelectron spectroscopy. Such a great increase of the surface energy was intimately related with the increase of hydrophilic group component in reactive ion irradiated PVDF surfaces. By using an atomic force microscopy, the root-mean-square of surface roughness of ion irradiated PVDF was not much altered compared to that of pristine PVDF.

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.19-23
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• 2003

Extended unbalanced magnetron sputtering system based on the cylindrical magnetron with a rotating cathode was developed. The unbalanced configuration of magnetic field was realized by means of additional lines of permanent magnets, placed along both sides of a 89 mm outer diameter and 600 mm long cylindrical cathode. The performance of the unbalanced magnetron was assessed in terms of the ion current density and the ion-to-atom ratio incident at the substrate. Furthermore, the paper presents the comparison of the internal plasma parameters, such as the electron temperature, electron density, plasma and floating potentials, measured by a Langmuir probe in various positions from the cathode, for conventional and unbalanced constructions of the cylindrical magnetron. The plasma density and ion current density are about 3-5 times higher than those of conventional one, in the unbalanced magnetron in a 0.24 Pa Ar atmosphere with a DC cathode power of 3 kW.