• 대한금속재료학회지
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• 제49권9호
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• pp.678-685
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• 2011

The aim of this study was to determine the effect of applied pressure and sintering temperature on the microstructure and mechanical properties for spark plasma sintering (SPS) from commercial pure titanium (CP-Ti) powders. Spark plasma sintering is a relatively new sintering technique in powder metallurgy which is capable of sintering metal and ceramic powers quickly to full density at a fairly low temperature due to its unique features. SPS of -200 mesh or -400 mesh CP-Ti powders was carried out in an $Ar+H_2$ mixed gas flowing atmosphere between $650^{\circ}C$ and $750^{\circ}C$ under 10 to 80 MPa pressure. When SPS was carried out at relatively low temperatures ($650^{\circ}C$ to $750^{\circ}C$), the high (>60 MPa) pressure had a marked effect on densification and grain growth suppression. The full density of titanium was achieved at temperatures and pressures above $700^{\circ}C$ and 60 MPa by spark plasma sintering. The crystalline phase and microstructure of titanium sintered up to $700^{\circ}C$ consisted of ${\alpha}$-Ti and equiaxed grains. Vickers hardness ranging from 293 to 362 Hv and strength ranging from 304 to 410 MPa were achieved for spark plasma sintered titanium.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.264-264
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• 2010

Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Bulletin of the Korean Chemical Society
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• 제35권9호
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• pp.2615-2620
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• 2014

Ni/$La_2O_3$ with a high dispersion was prepared by reduction of $La_2O_3$ perovskite oxide to examine the catalytic activity for the $CO_2-CH_4$ reaction. The Ni/$La_2O_3$ catalyst was found to be highly active for the reaction. The ratios of $H_2$/CO were measured in a flow of the reaction mixture containing $CO_2/CH_4$/Ar using an on-line gas chromatography system operated at 1 atm and found to be varied with temperature between 0.66 and 1 in the temperature range of $500-800^{\circ}C$. A kinetic study of the catalytic reaction was performed in a static reactor at 40 Torr total pressure of $CO_2/CH_4/N_2$ by using a photoacoustic spectroscopy technique. The $CO_2$ photoacoustic signal varying with the concentration of $CO_2$ during the catalytic reaction was recorded as a function of time. Rates of $CO_2$ disappearance in the temperature range of $550-700^{\circ}C$ were obtained from the changes in the $CO_2$ photoacoustic signal at early reaction stage. The plot of ln rate vs. 1/T showed linear lines below and above $610^{\circ}C$. Apparent activation energies were determined to be 10.4 kcal/mol in the temperature range of $550-610^{\circ}C$ and 14.6 kcal/mol in the temperature range of $610-700^{\circ}C$. From the initial rates measured at $640^{\circ}C$ under various partial pressures of $CO_2$ and $CH_4$, the reaction orders were determined to be 0.43 with respect to $CO_2$ and 0.33 with respect to $CH_4$. The kinetic results were compared with those reported previously and used to infer a reaction mechanism for the Ni/$La_2O_3$-catalyzed $CO_2-CH_4$ reaction.

• 한국표면공학회지
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• 제34권2호
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• pp.105-114
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• 2001

$Al_2$$O_3$ coatings were deposited on M2 high speed steels by the plasma enhanced chemical vapor deposition (PECVD) process, using a gas mixture of AlC1$_3$, $H_2$, $CO_2$ and Ar $Al_2$$O_3$ coatings had interference color and showed amorphous phase. $A1_2$X$A1_3$/($Ti_{0.5}$ /$Al_{0.5}$ )N double layer coatings were produced in the sequence of substrate $NH_3$ plasma pretreatment, ($Ti_{0.5}$$Al_{0.5}$)N depoition process, $Al_2$$O_3$ deposition process. $Al_2$ $O_3$/( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings showed NaCl structure in ( $Ti_{0.5}$A $l_{0.5}$)N layer and amorphous phase in A1$_2$ $O_3$ layer. It was shown that $Al_2$ $O_3$ columns continuously grew onto ( $Ti_{0.5}$A $l_{0.5}$)N columns. ( $Ti_{0.5}$A $l_{0.5}$)N single coating and $Al_2$ $O_3$/( $Ti_{0.5}$A $l_{0.5}$)N double layer coating were oxidized at $700^{\circ}C$, 80$0^{\circ}C$, 90$0^{\circ}C$ for 1hr, 3hr in atmosphere. At 80$0^{\circ}C$, single layer coatings were oxidized, which were examined substrate oxide particle. But $Al_2$ $O_3$/ ( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings maintained the asdeposited state. Therefore, $Al_2$ $O_3$/ ( $Ti_{0.5}$A $l_{0.5}$)N double layer coatings have moreexcellent oxidation resistance than ( $Ti_{0.5}$A $l_{0.5}$)N single layer coatings.X> 0.5/)N single layer coatings.s.

• 한국수소및신에너지학회논문집
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• 제28권1호
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• pp.9-16
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• 2017

Hydrogen forms metal hydrides with some metals and alloys leading to solid-state storage under moderate temperature and pressure that gives them the safety advantage over the gas and liquid storage methods. However, it has disadvantages of slow hydrogen adsorption-desorption time and low thermal conductivity. To improve characteristics of metal hydrides, it is important that activation and thermal conductivity of metal hydrides are improved. In this study, we have been investigated hydrogen storage properties of Hydralloy C among Ti-Mn alloys. Also, the characteristics of activation and thermal conductivity of Hydralloy C were enhanced to improve kinetics of hydrogen adsorption-desorption. As physical activation method, PHEM (planetary high energy mill) was performed in Ar or $H_2$ atmosphere. Hydralloy C was also activated by $TiCl_3$ catalyst. To improve thermal conductivity, various types of ENG (expanded natural graphite) were used. The prepared samples were compacted at pressure of 500 bar. As a result, the activation properties of $H_2$ PHEM treated Hydralloy C was better than the other activation methods. Also, the amounts of hydrogen storage showed up to 1.6 wt%. When flake type ENG was added to Hydralloy C, thermal conductivity and hydrogen storage properties were improved.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2001년도 추계학술강연 및 발표대회
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• pp.28-28
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• 2001

$Bi_2Te_3$계 열전반도체 재료는 200 ~ 400K 정도의 저온에서 에너지 변환 효율이 가장 높은 재료로서 열전냉각 및 발전재료로 제조볍 및 특성에 관한 많은 연구가 진행되어 왔다. 전자냉각 모듈의 제조에는 P형 및 N형 $Bi_2Te_3$계 단결정이 주로 사용되고 있으나. $Bi_2Te_3$ 단결정은 C축에 수직한 벽개면을 따라 균열이 쉽게 전파하기 때문에 소자 가공사 수윤 저하가 가장 큰 문제점으로 지적되고 있다. 이에 따라 최근 열전재료의 가공방법에 따른 회수율 증가 및 열전특성 향상에 관한 열간압출, 단조와 같은 연구가 활발히 이루어지고 있다. 본 연구는 가스분사법(gas atomizer)을 이용하여 용질원자 편석의 감소, 고용도의 증가,균일고용체 형성, 결정립미세화 둥 급속응고의 장점을 이용하여 화학적으로 균질한$Bi_2Te_3$계 열전재료 분말을 제조하고, 제조된 분발을 압출가공하여 기계적성질, 소자의 가공성 및 열전 성능 지수율 향상시키는데 연구 목적이 있다. 본 설험에서는 99.9%이상의 고순도 Bi. Te. Se. Sb를 이용하여, 고주파 유도로에서 Ar 분위기로 용융하고, 가스분사법를 이용하여 균질한 $Bi_2Te_3$계 열전재료 분만을 제조하였다. 분말표면의 산화막을 제거하기 위하여 수소분위기에서 환원처리를 행하였고, 된 분말을 Al 캔 주입하여 냉간성형 한 후 진공중에서 압출온도를 변화시켜 열간압출 가공을 행하였다. 압출 온도변화에 따른 압출재의 미세조직 및 열전특성에 중요한 영향을 미치는 C면 배향에 대한 결정방위 해석, 압출재의 압축강도 등을 분석하였으며, 압출온도에 따삼 미세조직 변화와 결정방위의 변화에 따른 열전특성의 관계를 해석하였다성시켰고 이들이 산인 HNO3에서 녹았기 때문이다. 본 연구에서 개발된 새로운 에칭 용액인 90H2O2 - 10HNO3 (vol%)의 에칭 원리가 똑같이 적용 가능한 다른 종류의 초경 합금에서도 사용이 가능할 것으로 판단된다.로 판단된다.멸과정은 다음과 같다. 출발물질인 123 분말이 211과 액상으로 분해될 때 산소가스가 배출되며, 이로 인해 액상에서 구형의 기공이 생성된다. 이들 중 일부는 액상으로 채워져 소멸되나, 나머지는 그대로 남는다. 특히, 시편 중앙에 서는 수십-수백 마이크론 크기의 커다란 기공이 다수 관찰된는데, 이는 기공의 합체로 만들어진 것이다. 포정반응 열처리 시 기공 소멸로 만들어진 액상포켓들은 주변 211 입자와 반응하여 123 영역으로 변한다. 이곳은 다른 지역과 비교하여 211 밀도 가 낮기 때문에, 미반응 액상이 남거나 211 밀도가 낮은 123 영역이 된다. 액상으로 채워지지 못한 구형의 기공들 중 다수가 123 결정 내로 포획되며, 그 형상은 액상/ 기공/고상 계면에너지에 의해 결정된다.단의 경우, 파단면이 매끄럽고 파변상의 결정립도 매우 미세하였으며, 산확물 의 용집도 찾아보기 어려웠 나, 접합부 파단의 경우에는 파변의 굴곡이 비교척 심하고 연성 입계파괴의 형태를 보였￡며, 결정립도 모채부 파단의 경우에 비해 조대하였다. 조대하였다. 셋째, 주상기간 중 총 에너지 유입률 지수와 $Dst_{min}$ 사이에 높은 상관관계가 확인되었다. 특히 환전류를 구성하는 주요 입자의 에너지 영역(75~l13keV)에서 가장 높은(0.80) 상관계수를 기록했다. 넷째, 회복기 중에 일어나는 입자들의 유입은 자기폭풍의 지속시간을 연장시키는 경향을 보이며 큰 자기폭풍일수록 현저했다. 주상에서 관측된 이러한 특성은 서브스톰 확장기 활동이 자기폭풍의

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• 한국해양환경ㆍ에너지학회지
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• 제13권1호
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• pp.18-29
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• 2010

기후온난화에 대처하기 위한 방안 중, $CO_2$ 해양지중저장은 성공가능성이 높은 수단중의 하나로써 각광받고 있다. $CO_2$ 해양지중저장은 대량 발생원으로부터 $CO_2$를 포집하여 저장지로 수송한 후, 가스 저장층 이나 염대수층 등과 같은 해저 지질구조 내에 $CO_2$를 저장하는 공정 전체를 아울러 지칭한다. 우리는 2005년부터 $CO_2$ 해양지중저장 관련 기술들을 개발해왔으며, 주요 기술 개발 분야에는 $CO_2$ 저장후보지 탐색과 $CO_2$ 수송 및 저장 공정을 위한 기본 설계가 포함된다. 신뢰성 있는 $CO_2$ 해양지중저장 시스템설계를 위해, 가상시나리오를 개발하였으며 수치해석 프로그램을 이용하여 전체공정을 분석하였다. $CO_2$ 포집원으로 부터 주입저장지로 $CO_2$를 수송하는 공정은 열역학 상태방정식으로 모사 가능하다. 본격적인 설계공정에 대한 수치해석을 수행하기에 앞서 관련 열역학 상태방정식들을 비교 및 분석하였다. 분석된 상태방정식들의 정확도를 평가하기 위해 참조문헌의 실험데이터와 수치계산결과를 비교하였다. 현재까지 진행된 $CO_2$ 해양지중저장 공정설계는 주로 순수한 $CO_2$를 대상으로 하였다. 하지만 포집된 $CO_2$ 혼합물은 질소, 산소, 아르곤, 물, 황화수소 등의 불순물을 포함하고 있다. 작은 양의 불순물이 포함될 시에도 열역학적 물성치가 바뀔 뿐 만 아니라, 압축, 정제, 수송 공정 전체에 막대한 영향을 미치게 되므로 간과되어서는 안 된다. 본 논문에서는 해상 및 육상 $CO_2$ 수송에 영향을 미치는 주요 설계 인자들을 분석하였으며, 가상 시나리오의 매개변수에 관한 연구를 수행한 다음, 유량, 직경, 온도, 압력 등의 설계 인자들의 변화 범위를 제시하고자 하였다.