• 자원리싸이클링
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• 제25권3호
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• pp.49-54
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• 2016

본 연구에서는, 아크 플라즈마 정련을 이용하여 지르콘샌드($ZrSiO_4$)를 지르코니아($ZrO_2$)와 실리카($SiO_2$)로 분리하였다. 실리카를 마이크로웨이브 침출을 통해 제거하고 고순도의 지르코니아를 얻었다. 플라즈마 퓨전은 두 가지 공정을 순차적으로 진행하였다. Ar 100% 분위기에서 환원 공정을 거친 후, Ar-$H_2$ 혼합 가스를 통해 정련과정을 거쳤다. 진공 챔버 내에서 냉각 후 지르코니아와 실리카로 이루어진 고상을 얻었다. 마이크로웨이브 침출을 위해 $240^{\circ}C$, 20% 황산용액을 사용하였다. 분석 결과 고순도(98.6%)의 지르코니아를 얻을 수 있었다.

• 반도체디스플레이기술학회지
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• 제11권4호
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

• 한국진공학회지
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• 제13권4호
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• pp.139-144
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• 2004

최근에는 진공공정에서 용기내의 청정도와 잔류기체의 부분압에 대한 관심이 높아지고 있다. 본 연구에서는 청정진공 발생에 많이 사용되고 있는 크라이오 펌프의 냉각판 온도에 따른 $H_2$, He, C, N, $O_2$, $H_2O$, Ar/2, $N_2$(CO), Ar, $CO_2$의 부분압을 잔류기체분석기로 측정하여 비교하였다. 크라이오 펌프를 켜고 약 72분이 지났을 때 펌프의 냉각판 온도가 12K에 도달하였으며, 25시간이 경과하여 온도가 충분하게 낮아졌을 때 부분압은 $H_2$, He, C, N, $O_2$, $H_2O$, Ar/2, $N_2$, Ar, $CO_2$순으로 24.9%, 6.6%, 5.5%, 2.2%, 3.8%, 30.7%, 6.5%, 6.1%, 5.5 %, 8.2%로 $H_2$와 $H_2O $압력이 상대적으로 높은 것을 알 수 있었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권8호
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• 전기학회논문지P
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• 제59권4호
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• pp.417-422
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• 2010

Atmosphere Plasma of Gas Discharge (APGD) has been used in plasma sources for material processing such as etching, deposition, surface modification and so on due to having no thermal damages. The APGD researches on AC source with high frequency have been mainly processed. However, DC APGD studies have been not. In order to understand APGD further, it is necessary to study on fundamental properties of DC APGD. In this paper, we developed a one-dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). Nine kinds of Ar discharge particles such as electron (e), positive ions ($Ar^+$, $Ar_2^+$) and neutral particles ($Ar_m^*$, $Ar_r^*$, $Ar_h^*$, $Ar_2^*$(1), $Ar_2^*$(3) and Ar gas) are considered in the computation. The simulation was worked at the current range of 1~15 [mA]. The characteristics of voltage-current were calculated and the structure of Joule heating were discussed. The spatial distributions of Ar DC APGD and the mechanism of power consumption were also investigated.

• 자원리싸이클링
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• 제20권4호
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• pp.71-77
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• 2011

$MoO_3$ 분말을 723 K ~ 873 K에서 Ar+$H_2$ 혼합기체를 이용히여 수평관상로에서 $MoO_2$로 훤원하였으며, 반용속도를 배가스 중의 상대습도를 측정하여 계산하였다. 반응속도는 수소가스 분압과 반응속도에 따라 현저하게 증가하였다. 환원 반응초기에 $H_2O$의 발생속도가 급격하게 증가하였으며, 시간의 경과에 따라 배가스 중의 $H_2O$ 분압은 급격하게 감소하였다. 이 시기에 환원 반응율은 직선적으로 증가하였다. 환원반응 초기의 $MoO_3$에서 $MoO_2$로의 환원반응의 활성화 에너지는 73.56 kJ/mol로 계산되었다.

• Bulletin of the Korean Chemical Society
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• 제25권1호
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• pp.73-78
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• 2004

A highly sensitive detecting method has been developed for determining part per billion of sulfur in $H_2S$/Ar plasma. The method is based on the excitation of Ar/$H_2S\;or\;Ar/H_2S/O_2$ mixture in hollow cathode glow discharge sustained by radiofrequency (RF) or 60 Hz AC power and the spectroscopic measurement of the intensity of emission lines from electronically excited $S_2^*\;or\;SO_2^*$ species, respectively. The RF or AC power needed for the excitation did not exceed 30 W at a gas pressure maintained at several mbar. The emission intensity from the $SO_2^*$ species showed excellent linear response to the sulfur concentration ranging from 5 ppbv, which correspond to S/N = 5, to 500 ppbv. But the intensity from the $S_2^*$ species showed a linear response to the $H_2S$ only at low flow rate under 20 sccm (mL/min) of the sample gas. Separate experiments using $SO_2$ gas as the source of sulfur demonstrated that the presence of $O_2$ in the argon plasma is essential for obtaining prominent $SO_2^*$ emission lines.

• 한국분말재료학회지
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• 제19권2호
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• pp.110-116
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• 2012

This study investigated the effects of annealing environment for the densification and purification properties of pure titanium coating layer manufactured by cold spraying. The annealing was conducted at $600^{\circ}C$/1 h and three kinds of environments of vacuum, Ar gas, and $5%H_2+Ar$ mixture gas were controlled. Cold sprayed Ti coating layer (as sprayed) represented 6.7% of porosity and 228 HV of hardness, showing elongated particle shapes (severe plastic deformation) perpendicular to injection direction. Regardless of gas environments, all thermally heat treated coating layers consisted of pure ${\alpha}$-Ti and minimal oxide. Vacuum environment during heat treatment represented superior densification properties (3.8% porosity, 156.7 HV) to those of Ar gas (5.3%, 144.5 HV) and $5%H_2+Ar$ mixture gas (5.5%, 153.1 HV). From the results of phase analysis (XRD, EPMA, SEM, EDS), it was found that the vacuum environment during heat treatment could be effective for reducing oxide contents (purification) in the Ti coating layer. The characteristic of microstructural evolution with heat treatment was found to be different at three different gas environments. The controlling method for improving densification and purification in the cold sprayed Ti coating material was also discussed.

• Elastomers and Composites
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• 제34권2호
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• pp.128-134
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• 1999

타이어 코드용 강철선을 RF 플라즈마를 이용한 acetylene 및 butadiene 가스의 플라즈마 중합으로 코팅하였으며, 타이어용 고무와의 접착력을 TCAT 또는 T-test로 측정하였다. 강철선의 접착력은 사용된 gas, plasma power, 코팅시간 및 가스 압력에 따라 측정하였으며, 플라즈마 중합에 앞서 Ar 플라즈마 에칭으로 타이어 코드를 세척하였다. 또한 $80^{\circ}C$의 증류수에서 7일간 노화시켜 접착력 저하를 고찰하였으며, 접착력 시험 후 타이어 코드 표면을 SEM으로 분석하여 파괴거동을 규명하고자 하였다. 가장 우수한 접착력은 acetylene의 경우 20W, 2분, 25mtorr에서, 그리고 butadiene의 경우는 l0W, 4분, 25mtorr에서 얻을 수 있었으며, Ar 에칭에 의한 접착력 변화는 없었다. 노화에 의한 접착력 저하는 없었으며, 도리어 증가하는 현상을 보였다. SEM 분석에서 강철선의 높은 거칠기와 플라즈마 코팅의 얇은 두께로 인하여 파괴거동 규명에는 한계가 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.362-362
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• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.