• Journal of Surface Science and Engineering
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• v.34 no.2
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• pp.97-104
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• 2001

($Ti_{ 1-x}$$Al_{ x}$)N has been deposited on high speed steel (HSS) substrate using PECVD from the gas mixture of $TiC1_4$, $AlC1_4$, $NH_3$, $H_2$, and Ar. The correlation between the microstructure and the mechanical properties was investigated. ($Ti_{1-x}$$Al_{ x}$)N showed single phase NaCl-structure up to X=0.87, while a mixed phase of NaCl Type (Ti, Al) N and wurtzite structure AlN was observed for 0.87$Ti_{1-x}$ $Al_{x}$ )N became by degrees as increasing X, which made the hardness of the coating higher by Al addition. When the coating was composed of a mixed phase, however, the hardness decreased abruptly due to the effect of soft AlN phase. The wear volume of the coatings could be obtained as the concentration of the coating was varied, and the relation between the wear volume and hardness or the adhesion strength was discussed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.1
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• pp.278-283
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• 2019

3 kinds of fine powder, Fe-2%Ni alloy powder(N Ltd.) and Fe+2%Ni mixed powder(B Ltd. and S Ltd.), were fabricated into sintered compacts of bending strength specimens and ring type specimens by metal injection molding, debinding and controlling sintering conditions (reduction and sintering atmospheres, sintering temperature, sintering time and cooling rates). Density and magnetic properties of the sintered compacts were evaluated with the following conclusions. (1) When each compact was hold at 1123K for 3.6ks in H2 and sintered at 1623K for 14.4ks in Ar, the density of N, B and S Ltd.'s sintered compacts were measured as 96, 99 and 99%, and oxygen/carbon contents were measured as 0.0041%O/0.0006%C, 0.0027%O/0.0022%C, and 0.160%O/0.0026%C, respectively. (2) Magnetic characteristics of B Ltd. compact in Ar with the best results showed $B_{25}=14.3KG$, $B_r=7.75KG$, and $H_c=2.1Oe$, but not enough as those made by melting process. (3) Magnetic properties of B Ltd. compact which were sintered at 1673K for 14.4ks in Ar gas, and cooled at $0.83Ks^{-1}$ to 1123K and then cooled at $0.083Ks^{-1}$ down to room temperature were measured as $B_{25}=14.8KG$, $B_r=8.3KG$, and $H_c=1.3Oe$, almost similar to those made by melting process. Objected soft magnetic materials properties were obtained through sintering process by controlling sintering conditions (reduction condition, sintering atmosphere, sintering temperature and sintering time) and cooling rates.

• Membrane Journal
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• v.34 no.2
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• pp.146-153
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• 2024

In this experiment, a Ti-based flat hydrogen separation membrane was designed and manufactured. In order to find a Ti-based hydrogen separation membrane of a new composition, the correlation between the physical-chemical properties and hydrogen permeability of various alloys was investigated. Based on this, two types of new alloy films (Ti_14.2Zr_66.4Ni_12.6Cu_6.8 (70 ㎛), Ti_17.3Zr_62.7Ni₂₀ (80 ㎛)) was designed and manufactured. The manufactured flat hydrogen separation membrane was tested for hydrogen permeation using mixed gas (H₂, N₂) and sweep gas (Ar) at 300~500℃ and 1~4 bar. The Ti_14.2Zr_66.4Ni_12.6Cu_6.8 alloy film has a maximum flux of 16.35 mL/cm² min at 500℃ and 4 bar, and the Ti_17.3Zr_62.7Ni₂₀ alloy film has a maximum flux of 10.28 mL/cm² min at 450℃ and 4 bar.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.48-56
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• 1989

Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

• Transactions of Materials Processing
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• v.31 no.4
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• pp.240-245
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• 2022

In this study, to achieve good electrical conductivity of a charging terminal component in electric vehicles, we investigated the microstructure evolution of pure-Cu subjected to metal injection molding by controlling the sintering variables, such as temperature and time. Thus, three samples were sintered at temperatures ranging from 1000 ℃ to 1050 ℃ near to the melting temperature of 1085 ℃ for 1 and 10 h after thermal evaporation of binder at 730 ℃. Both procedures were made using a unified furnace under Ar+H₂ gas with high purity. The structural observation displayed that the grain size as well as the compactness (a reciprocal of porosity) increased simultaneously as temperature and time increased. This gave rise to high thermal conductivity of 90% IACS together with high density, which was mainly attributed to decrease in fractions of grain boundaries and micro-pores working as effective scattering center for electron movement.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.644-644
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• 2013

Graphene is a two-dimensional sp2 layer material. Despite the short history in the empirical synthesis of the graphene layers, the academic/industrial unique features have brought highly significant interest in research and development related to graphene-related materials. In particular, the electrical and optical performances have been targeted towards pre-existing microelectronicand emerging nanoelectronic applications. The graphene synthesis relies on a variety of processing factors, such as temperature, pressure, and gas ratios involving H2, CH4, and Ar, in addition to the inherent selection of copper substrates. The current work places its emphasis on the role of experimental factors in growing graphene thin films. The thermally-grown graphene layers are characterized using physical/chemical analyses, i.e., four point resistance measurements, Raman spectroscopy, and UV-Visible spectrophotometry. Ultimately, an optimization strategy is proposed in growing high-quality graphene layers well-controlled through empirical factors.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.179-182
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• 2007

Polycrystaline (poly) 3C-SiC thin film on n-type and p-type Si were deposited by APCVD using HMDS, $H_2$, and Ar gas at $1180^{\circ}C$ for 3 hour. And then the schottky diode with Au/poly 3C-Sic/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) value were measured as 0.84 V, over 140 V, 61nm, and $2.7{\times}10^{19}\;cm^3$, respectively. The p-n junction diode fabricated by poly 3C-SiC was obtained like characteristics of single 3C-SiC p-n junction diode. Therefore, its poly 3C-SiC thin films are suitable MEMS applications in conjuction with Si fabrication technology.

• Progress in Superconductivity
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• v.7 no.2
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.661-668
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• 2010

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.