• Journal of the Korean Society for Heat Treatment
• /
• v.8 no.1
• /
• pp.32-43
• /
• 1995

Ti-6Al-4V alloy are widely used in chemical and aircraft industries for their good corrosion resistance and high strength to weight ratio. Surface alloying of Ti alloy by $CO_2$ laser is able to produce few hundred micrometers thick TiN surface-alloyed layer with high hardness on the substrate very simplely by injecting reaction gas($N_2$) into a laser-generated melt pool and adjust the hardness to the specific requirements of the individual application by changing of laser processing parameters. This research has been investigated the effect of such parameters on TiN surface-alloying of Ti-6Al-4V alloy by $CO_2$ laser. The maximum hardness of TiN surface-alloyed zone waw obtained by injecting 100% $N_2$ gas and it was decreased as the amount of $N_2$ gas in Ar and $N_2$ gas mixture was decreased. As scanning speed was increased, the hardness and depth of TiN surface-alloyed zone was decreased at constant laser power. The surface hardness after double scanning laser treatment is higher than that of single scanning. At constant laser power, the surface roughness is increased after the surface alloying if laser scanning speed is decreased.

• Economic and Environmental Geology
• /
• v.40 no.5
• /
• pp.635-649
• /
• 2007

Geochemical composition, stable isotopes $({\delta}^{18}O,\;{\delta}D,\;{\delta}^{34}S)$ and noble gases(He, Ne and Ar) of nine hot spring water and three groundwater for five hot springs(Jukam, Hwasun, Dokog, Jirisan, Beunsan) from the Honam area were analyzed to investigate the hydrogeochemical characteristics and the hydrogeochemical evolution of the hot spring waters, and to interpret the source of sulfur, helium and argon dissolved in the hot spring waters. The hot spring waters show low water temperature ranging from 23.0 to $30.5^{\circ}C$ and alkaline characteristics of pH 7.67 to 9.98. Electrical conductivity of hot spring waters is $153{\sim}746{\mu}S/cm$. Groundwaters in this area were characterized by the acidic to neutral pH range$(5.85{\sim}7.21)$, the wide electrical conductivity range $(44{\sim}165{\mu}S/cm)$. The geochemical compositions of hot spring and groundwaters can be divided into three water types: (1) $Na-HCO_3$ water type, (2) Na-Cl water type and (3) $Ca-HCO_3$ water type. The hot spring water of $Ca-HCO_3$ water type in early stage have been evolved through $Ca(Na)-HCO_3$ water type into $Na-HCO_3$ type in final stage. In particular, Jurim alkaline(pH 9.98) hot spring water plotted at the end point of $Na-HCO_3$ type in the Piper diagram is likely to arrive into the final stage in geochemical evolution process. Hydrogen and oxygen isotopic data of the hot spring water samples indicate that the hot spring waters originated from the local meteoric water showing latitude and altitude effects. The ${\delta}^{34}S$ value for sulfate of the hot spring waters varies widely from 0.5 to $25.9%o$. The sulfur source of most hot spring waters in this area is igneous origin. However, The ${\delta}^{34}S$ also indicates the sulfur of JR1 hot water is originated from marine sulfur which might be derived ken ancient seawater sulfates. The $^3He/^4He\;and\;^4He/^{20}Ne$ ratios of the hot spring waters range from $0.0143{\times}10^{-6}\;to\;0.407{\times}10^{-6}\;and\;6.49{\sim}584{\times}10^{-6}$, respectively. The hot spring waters are plotted on the mixing line between air and crustal components. It means that the He gas in the hot spring waters was mainly originated from crustal sources. However, the JR1 hot spring water show a little mixing ratio of the helium gas of mantle source. The $^{40}Ar/^{36}Ar$ ratios of hot spring water are in the range from $292.3{\times}10^{-6}\;to\;304.1{\times}10^{-6}$, implying the atmospheric argon source.

• Analytical Science and Technology
• /
• v.19 no.1
• /
• pp.1-8
• /
• 2006

The isotope dilution method was used for the determination of Br impurity in $1000{\mu}g/g$ Cl standard solution. Since relatively pure KCl salt was used for the preparation of the Cl standard solution, the Br impurity determination suffers from both spectral and non-spectral interferences due to the presence of a large amount of K and Cl matrices. AG2-X8 anion-exchange resin was employed to separate the Br analyte from the matrices, and RF power was raised to 1500 W and nebulizer gas flow rate was lowered to 0.77 L/min to reduce background from the $ArArH^+$ molecular ions. The Br impurity in the $1000{\mu}g/g$ Cl standard solution was determined to be 43.7 ng/g with the standard addition method. The analytical result was in good agreement with 41.2 ng/g (RSD 1.6%) determined by the isotope dilution method to lower uncertainty from poor reproducibility of the anion-exchange process.

• Journal of the Korean Magnetics Society
• /
• v.15 no.4
• /
• pp.226-230
• /
• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1585-1587
• /
• 2001

ac PDP 동작에 있어 미량 불순물 가스는 panel 내의 휘도 및 방전 특성에 많은 영향을 미칠것으로 생각된다. $O_2$, O, C 및 $H_2$와 같은 불순물 가스는 ac PDP의 제조 공정 중에 발생하거나, 충전된 방전가스에 혼합되어 발생하는 등 여러 가지 원인으로 나타난다. 이 논문에서는, ac PDP의 동작 가스 중에 미량의 불순물 가스(Ar, $N_2$, $O_2$, $H_2$, $CO_2$)를 주입하여, 이 미량의 불순물 가스로 인한 ac PDP의 휘도 및 방전의 특성변화에 대한 관계를 조사하였다. 그 결과, $O_2$ 가스의 분압이 $2{\times}10^{-3}$/He+Ne+Xe(4%)일 경우, 방전전압은 12% 증가하였고, 휘도는 60% 감소하였다. 또한, $CO_2$ 가스의 경우는 방전전압은 14% 증가하였고, 휘도는 44% 감소하였다.

• Journal of the Korean Vacuum Society
• /
• v.15 no.4
• /
• pp.380-386
• /
• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of the Korean Ceramic Society
• /
• v.28 no.4
• /
• pp.315-323
• /
• 1991

The preparation of zirconium carbide powders by the halogenide process of ZrCl4-C-Mg system (1:1:2, molar ratio) was studied between 300。 and 120$0^{\circ}C$ under Ar gas flow (200 mι/min). The formation mechanism and kinetics of zirconium carbide and characteristics of the synthesized powder were examined by TG-DTA, XRD, SEM and PSA. 1) The formation mechanism of zirconium carbide were as follows, above 30$0^{\circ}C$ ZrCl4(S)+Mg(s)longrightarrowZrCl2(s)+MgCl2(s) above 40$0^{\circ}C$ ZrCl2(S)+Mg(s)longrightarrowZr(s)+MgCl2(s) above 50$0^{\circ}C$ Zr(s)+C(s)longrightarrowZrC(s) 2) The apparent activation energy of the reduction-carbonization at temperature of 800$^{\circ}$to 100$0^{\circ}C$ was 11.9 kcal/mol. 3) The lattice parameter and the crystallite size of ZrC which was produced from the mixture powder of ZrCl4, C and Mg (1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were 4.700A and 180A, respectively. 4) The powders obtained from the mixture powder of ZrCl4, C and Mg(1:1:2, molar ratio) at 100$0^{\circ}C$ for 1 h were agglomerate with the average size of about 13${\mu}{\textrm}{m}$ in SEM micrograph.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.250-251
• /
• 2014

This study introduces a simple deposition of $Cu_2O$ thin films with surface morphologies composed of columns, submicron-rods and submicron-branches on glass substrate from metallic Cu targets by tailoring the $Ar/O_2$ ratios during the sputtering. The obtained samples were used to fabricate gas sensor. The $H_2S$ sensing properties of the sensors at working temperatures from $100^{\circ}C$ to $300^{\circ}C$ were studied, in which $Cu_2O$ submicron-branches performed the best sensing property comparing with the rest morphologies. A transformation of $Cu_2O$ to $Cu_2S$ and CuS was consider as a main factor to the sensing mechanism of the sensors.

• Korean Journal of Materials Research
• /
• v.19 no.2
• /
• pp.90-94
• /
• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.179-179
• /
• 2016

A radio-frequency (RF) Inductively Coupled Plasma (ICP) torch system was used for boron-nitride nano-tube (BNNT) synthesis. Because of electrodeless plasma generation, no electrode pollution and effective heating transfer during nano-material synthesis can be realized. For stable plasma generation, argon and nitrogen gases were injected with 60 kW grid power in the difference pressure from 200 Torr to 630 Torr. Varying hydrogen gas flow rate from 0 to 20 slpm, the electrical and optical plasma properties were investigated. Through the spectroscopic analysis of atomic argon line, hydrogen line and nitrogen molecular band, we investigated the plasma electron excitation temperature, gas temperature and electron density. Based on the plasma characterization, we performed the synthesis of BNNT by inserting 0.5~1 um hexagonal-boron nitride (h-BN) powder into the plasma. We analysis the structure characterization of BNNT by SEM (Scanning Electron Microscopy) and TEM (Transmission Electron Microscopy), also grasp the ingredient of BNNT by EELS (Electron Energy Loss Spectroscopy) and Raman spectroscopy. We treated bundles of BNNT with the atmospheric pressure plasma, so that we grow the surface morphology in the water attachment of BNNT. We reduce the advancing contact angle to purity bundles of BNNT.