• Journal of Adhesion and Interface
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• v.4 no.1
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• pp.28-34
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• 2003

Steel tire cords were subjected to plasma polymerization coating of acetylene in order to enhance the adhesion to rubber compounds. Plasma polymerization coating was varied to plasma polymerization coating of acetylene, argon plasma etching+plasma polymerization, or argon plasma. etching+plasma polymerization with Ar carrier gas. Adhesion was evaluated via TCAT samples and compared to those with brass coated tire cord. For durability study, plasma polymer cooled tire cords were aged in lab atmosphere for 1, 3, 5, 10 or 15 days, while TCAT specimens prepared with plasma polymer coated tire cords were aged in distilled water, 10% NaCl solution or $100^{\circ}C$ oven for 1, 2, 3 or 4 weeks. After testing, failure surfaces were analyzed with SEM/EDX. Among the treatments, the highest adhesion was obtained by Ar etching+acetylene plasma. polymerization coating with Ar carrier gas, providing almost same pull-out force as the brass coated tire cords. Upon the aging of the tire cords in the lab atmosphere, brass coated tire cords provided better adhesion than plasma polymer coated tire cords, while the TCAT samples with plasma polymer coated tire cords exhibited similar or slightly superior durability to those with brass coated tire cords.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.155-157
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• 1991

This paper describe a Laser CVD technology which realizes planarized interlevel dielectrics in sub-micron VLSI's. This technology comprises sub-micron gap filling with $SiO_2$ films between metal lines. Laser CVD process conditions have been investigated to improve step coverage of interlevel dielectrics. An ArF(193nm) Excimer Laser was used to excite and dissociate gas phase $SiH_4\;and\;N_2O$ molecules. The Laser CVD by $N_2O\;and \;SiH_4$. mixture gases has realized conformal deposition above the temperature of $300^{\circ}C$, as a result sub-micron gaps were buried with $SiO_2$ films.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.700-702
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• 2004

The dependence of environmental gases such as Ar, $O_2$ on the emission current from carbon nanotube emitters was examined in this study. Based on our experiments, the current density is decreased in single-wall carbon nanotubes (SWNTs), but is increased in multi-wall carbon nanotubes (MWNTs) as the vacuum level decreases from $10^{-7}$ Torr to $10^{-4}$ Torr by the inflow purging gases. The current density subsequently recovered as the vacuum level increased to $10^{-7}$ Torr when gas inflow stopped. From those results, we conclude that the MWNTs have completely different degradation characteristics in comparison to SWNTs excluding the effect of binder materials.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.02a
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• pp.238-244
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• 2004

The relationship between the leaching and gap inventory of spent fuel has been studied. When a specimen of J44H08 spent PWR fuel with 38 GWD/MTU has been leached in the synthetic granitic groundwater in Ar atmosphere, the released fraction of cesium was increased rapidly up to 0.7% at around 500 days and stayed below 0.8% until 3 years. This 0.7% of cesium might be released from the gap in this fuel. The measurement of gap inventory with C15I08 spent PWR fuel, having 35 GWD/MTU and 0.22% of fission gas release, was also determined near 0.6% for the cesium, which is a similar fraction of cesium released from the leaching experiment with J44H08 fuel. Its gap inventories of strontium and iodine were about 0.03 and less than 0.2% respectively. Respective fractions of cesium and strontium in grain boundary of C15I08 were 0.78, 0.09%.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.173-175
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• 2003

At the low temperature of $950^{\circ}C$ the $\mu\textrm{m}$-sized whisker growth during the catalytic CVD of pyrolytic carbon from methane with $H_2$- and Ar-gas on quartz substrate with NiO powder was found in this work. In the preliminary study it was observed from pure methane pyrolysis without catalyst at the high temperature $1500~1700^{\circ}C$. If the growth whisker should be stopped at initial stage, about 20 min. of the methane pyrolysis, it would be nanosized whisker growth. The screw growth mechanism and unique mechanical properties of whisker for composites were also recognized. If the pyrolysis would be continued, we could found also spiral growth of whistlers with diameter of about 1, 5 mm. The large length of whisker was about 10 cm in 20 minute.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.783-790
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• 1998

New process development of nuclear fuel fabrication for nuclear power plant was attempted by induction plasma technology with yttria-stabilized-zirconia ($\textrm{ZrO}_{2}$-$\textrm{Y}_{2}\textrm{O}_{3}$)powder, similar to $\textrm{UO}_{2}$, in the respect of melting point and physicochemical characteristics. Extent of powder melting was affected greatly by plasma plate power and particle size. Being optimized such as, sheath gas composition, probe position, particle size and spraying distance, dense deposit of 97.91% T.D. with deposition rate 20mm/min was attained at the condition of 120/20$\ell$/min of Ar/$\textrm{H}_{2}$ flow rate, 80kw of plate power, 8cm of probe position, 200Torr of chamber pressure and 18cm of spraying distance. The pellet of 96.5% of theoretical density was formed with homogeneity and nice exterior view at the best condition of deposition experiments, and the possibility of new nuclear pellet fabrication process was confirmed. The main and interrelated effects on deposit density were assessed by ANOVA(Ana1ysis of Variance).

• Journal of Surface Science and Engineering
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• v.39 no.2
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• pp.70-75
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• 2006

As technology advances, there is a demand for development of hard, solid lubricant coating. (Ti,Cr)N-$MoS_2$, films were deposited on SKD 11 tool steel substrate by co-deposition of $MoS_2$, with (Ti,Cr)N using a D.C. magnetron sputtering process. The influence of the $N_2/Ar$ gas ratio, the deposition temperature, the amount of $MoS_2$ in the films, and the bias voltage on the mechanical and the structural properties of the films were investigated. Wear tests were performed on the films deposited in various conditions.

• Progress in Superconductivity
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• v.12 no.1
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• pp.1-5
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• 2010

In this work we synthesized both MgB2 and Carbon doped MgB2 superconductor with Ag addition via high energy milling and substituent heat treatment. Heat treatments were performed at $900\;^{\circ}C$ for 30 min in flowing Ar gas. We varied amount of Ag powder. In a range of Ag powder was 0~5wt%. The effect of Ag was correlated with superconducting properties. The results show a slight decrease in critical temperature ($T_c$) and a reduction of critical current density ($J_c$) at high fields for the Ag-doped samples as compared to the un-doped samples. Reduction of $J_c$ may be due to the formation of MgAg compound.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.72-72
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• 2001

Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.131-134
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• 1998

The deposition rate and surface morphology of Al films deposited by MOCVD have been studied on the $SiO_{2}$ and TiN(60nm/Si) substrates. A1 films were deposited with the pyrolysis of dimethylethylamine alane(DMEAA). When A1 was deposited on Ti& substrate without carrier gas, Al deposition rate increased with H\ulcorner pre- treatment. The $H_2$ gas enhances the CVD reaction at the substrate surface. When Al was deposited on $SiO_{2}$ substrate, $H_2$ plasma pretreatment reduced Al incubation time and made a dense Al film compared with Ar plasma pre- treatment or no pretreatment.