• Korean Journal of Materials Research
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• v.3 no.6
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• pp.624-631
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• 1993

The composites in the system aluminium titanate-mullite were synthesized by stepwise alkoxide hydrolysis of tetraethylorthosilicate, Si(OCLH5), and titaniumtetraethoxide, $Ti(OC_{2}H_{5})_4$ in $Al_{2}O_{3}$ ethanolic colloidal solution. All particles produced by sol-gel-process were amorphous, monodispesed and had a narrow particle size distribution. Sintered bodies at $1600 ^{\circ}C$ for 2h were subjected to prolonged durability tests-on the one hand annealing at the critical decomposition temperature of $1100 ^{\circ}C$ for lOOh and on the other cyclic thermal shock between 750 and $1400 ^{\circ}C$ for 100h. The best thermal durability was achieved by a composition containing 70 and 80 vol% aluminium titanate, which showed little change in microstructure and thermal expansion cycles during the tests. The microstructural degradation of samples studied using scanning electron microscopy, X-ray diffraction, and dilatometry, was presented here. The study was conducted in order to predict the service life of aluminium titanate-mullite ceramics formed by this processing route.

• Korean Journal of Materials Research
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• v.17 no.1
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• pp.18-24
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• 2007

Mullite-PSZ composite was prepared by sol-gel method using $Al(sec-OC_4H_9)_3,\;Si(OC_2H_5)_4,\;ZrOCl_2\;8H_2O\;and\;Y_2O_3$. The sinterability ana mechanical properties of powder compacts sintered at $1,650^{\circ}C$ for 4 hrs were investigated for various PSZ contents. In result Al-Si spinel formed at $980^{\circ}C$ from amorphous dried gel, and zirconia as well as mullite crystal formed above $1,200^{\circ}C$. The sintered body was densified to $97{\sim}98%$ except the specimen containing 25vol% PSZ which showed the relative density of about 95% obtained by sintering at $1,650^{\circ}C$ for 4 h. The flexural strength of the sintered body was a maximum value of 290 MPa in 20 vol% PSZ, which was also considerably larger than the value of 200 MPa without PSZ. The value of the fracture toughness increased linearly with increase of PSZ content and showed a maximum value of $4.3MPam^{1/2}$ in 25 vol% PSZ, Namely this value was remarkably larger than the $value(2.6MPam^{1/2})$ of pure mullite without PSZ.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.619-623
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• 2000

Alumina membrane was prepared by sol-gel coating method using boehmite powder(${\Upsilon}-AlOOH$). The supported and the unsupported alumina membrane were fabricated to investigate the phase transformation and change of microstructure. It is important to control the homogeneous pore size and distribution in application of filtering process. The ${\theta}-to\;{\alpha}-AL_2O_3$ phase transformation (XRD) and the change of microstructure was investigated using scanning electron microscopy(SEM). XRD patterns showed that the supported membrane had $100^{\circ}C$ higher ${\theta}-to\;{\alpha}-AL_2O_3$ transformation temperature compared to the unsupported membrane. The similar effect was also observed for microstructural change of the membrane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.359-360
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• 2005

PZT(20/80) and PZT(80/20) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT(20/80)/PZT(80/20) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the excess PbO. In the DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $880^{\circ}C$. The average thickness of the PZT heterolayered thick films was approximately $80{\mu}m$.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.95-98
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• 2013

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons ($D^0X$), two-electron satellite (TES), free-to-neutral-acceptors (e,$A^0$), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for $D^0X$ in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for $D^0X$ transitions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.313-314
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• 2005

$PbTiO_3$ and PZT(52/48) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PT/PZT(52/40) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the PbO-$PbF_2$ flux. In the X-ray diffraction analysis, PZT(52/48) thick films showed a perovskite polycrystalline structure without a pyrochlore phase.

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.631-636
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• 1989

Submicron high-purity mullite powder was prepared by a colloidal sol-gel route. Boehmite and silica were the starting materials. 2wt% $\alpha$-Al2O3 or ZrO2 was used as a seeding material. The gelled powder was calcined at 130$0^{\circ}C$ for 100min and attrition milled for 3hrs. The mullite powder obtained was composed of submicrometer and uniform particles with a narrow size distribution. It was hot-pressed at 1$600^{\circ}C$ for 1hr under 10MPa or was sintered at 1$650^{\circ}C$ for 4hrs. The bulk densities of the products made by both processes were 3.14 and 3.12g/㎤. the mechanical, thermal and electrical properties of the sintered mullite were characterized by bending strength, thermal expansion coefficient, thermal conductivity, dielectric constant and dielectric loss, etc.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1363-1364
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• 2007

The composites such as Sn-CNTs, $SnSb_{0.5}$-CNTs and $CoSb_3$-CNTs have attracted much attention in the past years owing to their good overall properties. In these samples, intermetallic compounds show high specific capacities. Recently, interest in metal oxides such as $Al_{2}O_{3}$, MgO and $TiO_2$ has been largely stimulated by the realization that they can improve the cycling stability of the Li-ion battery electrodes. The reversible capacity of the $TiO_2$/CNTs composite reaches 168 mAh $g^{-1}$ at the first cycle and remains almost constant during long-term cycling. In this study, a nanocomposite of $TiO_2$/CNTs was prepared by sol-gel method and its electrochemical properties as anode materials for Li-ion batteries were studied by galvanostatic cycling, cyclic voltammograms (CV) and electrochemical impedance spectroscopy (EIS).

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.223-223
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• 2003

광통신에는 광신호의 전송과 광신호 처리에 처리 과정에서 광 손실을 수반하므로 각 요소별로 광신호 증폭이 반드시 필요하다. 또한 광통신망의 완전 광화를 위해서는 제조 공정이 간단하여 가격이 저렴하고, 높은 신뢰성과 높은 증폭 효율을 가지면서 다른 부품과의 집적화가 가능한 광도파로형 광증폭기가 요구되고 있다 그러나 실리카는 광통신 파장대인 1.55$\mu\textrm{m}$대역의 증폭이 가능한 Er 이온에 대한 용해도가 50ppm 이하로 낮아 lmol% 이상 고농도로 Er 이온을 첨가하여 높은 증폭 효율을 얻는데 한계를 가지고 있다. 따라서 본 연구에서는 Er 이온에 대하여 높은 용해 특성을 가지고 있어 고농도 Er 이온 도핑이 가능한 알루미나에 Er을 1-2 mol% 첨가하여 광발광 특성을 조사하였다. Er이 첨가된 알루미나 나노 졸은 Al(NO$_3$)$_3$ㆍ9$H_2O$와 Er(NO$_3$)$_3$.5$H_2O$가 일정 양 용해된 수용액에 NH$_4$OH를 가하여 침전물을 얻고 여과 및 수세하여 졸 입자의 함량이 약 5wt%가 되게 이온교환수와 해교제인 초산을 소량 가하여 10$0^{\circ}C$에서 약 50시간 열처리하는 방법으로 제조하였다. Er이 첨가된 알루미나 코팅막은 Er 이 첨가된 알루미나 나노 졸에 GPS(3-glycidoxypropyltriethoxysilane)를 Al에 대하여 7 mol% 가하여 스핀 코팅법으로 제조하였다. Si 기판에 코팅하고, 상온에서 90$0^{\circ}C$까지 각 1시간 열처리한 코팅막의 광 발광 특성은 Er 이온의 첨가량과 열처리로 변화된 알루미나 코팅막의 결정상과 연계하여 논의 될 것이다. X-선 회절법으로 분석한 알루미나 코팅막의 온도에 따른 결정상은 boehmite 상에서 약 50$0^{\circ}C$이후에 ${\gamma}$-Al$_2$O$_3$로 전이하고 있다.