• Korean Journal of Materials Research
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• v.28 no.4
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• pp.247-253
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• 2018

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below $350^{\circ}C$. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and $H_2O$ increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., $Al_2O_3$) that can sufficiently prevent the diffusion of impurities into the channel.

• Journal of the Korean institute of surface engineering
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• v.40 no.4
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• pp.159-164
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• 2007

Transparent aluminum oxide films were deposited on polycarbonate (PC) substrates by inductively coupled plasma (ICP) assisted reactive sputtering. the oxygen flow rate was regulated by controlling the target voltage with a proportional integrate derivative controller. The PC substrate was treated with plasma prior to the deposition in order to the enhance the adhesive strength of the $Al_2O_3$ film. The characteristics of hardness, structure, density, transmittance, deposition rate, surface roughness and residual stress were investigated to estimate the possibility for the hard coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.318-318
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• 2011

Etching of an ultrathin aluminum oxide film on NiAl(110) substrate by methanol is studied by home-built scanning tunneling microscopy at room-temperature. We deposited liquid methanol on thin alumina film by using a high speed solenoid valve suitable for deposition of thermally unstable molecules. It is found that only the reflection domain boundary between two domains was preferentially etched by methanol. Since the reflection domain boundary has many oxygen vacancies and irregular structures, judging from the fact, we assume that oxygen vacancies cause the chemically reactive phenomena of methanol in reflection domain boundary on an alumina film. The reactivity of the reflection domain boundary is attributed to the oxygen vacancies due to irregular structures. Similar reactivity is found on the oxygen deficient alumina produced on top of the intact alumina.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.213-220
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• 2009

The optimal condition of low temperature deposition of transparent conductive Al-doped zinc oxide (AZO) films is studied by RF magnetron sputtering method. To achieve enhanced-electrical property and good crystallites quality, we tried to deposit on glass using a two-step growth process. This process was to deposit AZO buffer layer with optimal growth condition on glass in-situ state. The AZO film grown at rf 120 W on buffer layer prepared at RF $50{\sim}60\;W$ shows the electrical resistivity $3.9{\times}10^{-4}{\Omega}cm$, Carrier concentration $1.22{\times}10^{21}/cm^3$, and mobility $9.9\;cm^2/Vs$ in these results, The crystallinity of AZO film on buffer layer was similar to that of AZO film on glass with no buffer later but the electrical properties of the AZO film were 30% improved than that of the AZO film with no buffer layer. Therefore, the cause of enhanced electrical properties was explained to be dependent on degree of crystallization and on buffer layer's compressive stress by variation of $Ar^+$ ion impinging energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.601-606
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• 1998

ZnO thin film had been deposited on the glass by sputtering method, and the electrical and structural properties were investigated. When the rf power was 180W and sputtering was 10 m Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$\times10^{-4}\Omega\cdot{cm}$) and then carrier concentration and Hall mobility were $6.27\times10^{20} cm^{-3} and 22.04 cm^2/V\cdot$s, respectively. The undoped ZnO thin film had about 10$\times10^{14}\Omega\cdot cm$ resistivity when oxygen content was 10% or more at room temperature. When the oxygen content was 50% and below and sputtering pressure was 1.0$\times$1.0 \ulcorner Torr, the surface morphology of thin film observed by SEM was overall uniform.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.107-112
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• 2015

The oxide films formed on etched aluminum foils play an important role as dielectric layers in aluminum electrolytic capacitors. $Y_2O_3$-doped $ZrO_2$ (YZ) films were coated on the etched aluminum foils by sol-gel dip coating, and the electrical properties of YZ-coated Al foils were characterized. YZ films annealed at $450^{\circ}C$ were crystallized into a cubic phase, and as the $Y_2O_3$ doping content increased, the unit cell of $ZrO_2$ expanded and the grain size decreased. The etch pits of Al foils were filled by YZ sol when it dried at atmospheric pressure after repeating for several times, but this step could essentially be avoided when being dried in a vacuum. YZ-coated foils indicated that the specific capacitance and dissipation factor were $2-2.5{\mu}F/cm^2$ and 2-4 at 1 kHz, respectively, and the leakage current and withstanding voltage of films approximately 200 nm thick were $5{\times}10^{-4}A$ at 21 V and 22 V, respectively. After being anodized at 500 V, the foils exhibited a specific capacitance and dissipation factor of $0.6-0.7{\mu}F/cm^2$ and 0.1-0.2, respectively, at 1 kHz, while the leakage current and withstanding voltage were $2{\times}10^{-4}-3{\times}10^{-5}A$ at 400 V and 420-450 V, respectively. This suggests that YZ film is a promising dielectric that can be used in high voltage Al electrolytic capacitors.

• Journal of the Korean institute of surface engineering
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• v.48 no.2
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• pp.33-37
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• 2015

High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.593-600
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• 2007

Aluminum was anodized in a $H_2SO_4$ solution, and titanium (IV) oxide ($TiO_2$) was electrodeposited into nanopores of anodic porous alumina in a mixed solution of $TiOSO_4$ and $(COOH)_2$. The photocatalytic activity of the prepared film was analyzed for photodegradation of methylene blue aqueous solution. Consequently, we found it was possible to electrodeposit $TiO_2$ onto anodic porous alumina, and synthesized it into the nanopores by hydrolysis of a titanium complex ion under AC 8-9 V when film thickness was about $15-20{\mu}m$. The photocatalytic activity of $TiO_2$-loaded anodic porous alumina ($TiO_2/Al_2O_3$) at an impressed voltage of 9 V was the highest in every condition, being about 12 times as high as sol-gel $TiO_2$ on anodic porous alumina. The results revealed that anodic porous alumina is effective as a substrate for photocatalytic film and that high-activity $TiO_2$ film can be prepared at low cost.