• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.3
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• pp.19-25
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• 1999

The photoreceptor films with double layer structure were prepared by the plasma polymerization and the dip-coating method. The blocking layer was coated with A1$_2$O$_3$ on the Al substrate and the charge generation layer was formed by H$_2$ phthalocyanine (H$_2$Pc). Poly 9-Vinylcarbazole was used as a charge transport layer. H$_2$Pc film prepared by the vacuum evaporation had absorption peaks on 613.6[nm] and 694.8[nm], and H$_2$Pc film prepared by the plasma polymerization had a dull peaks between 600 and 700[nm]. The surface potential of PVCz increased with increasing the applied voltage and the thickness of PVCz. The dark decay characteristic, the light decay time and the residual time increased with increasing the thickness of PVCz. The surface charge of PVCz of 15[${\mu}{\textrm}{m}$] thickness was 134[nc/$\textrm{cm}^2$] at the surface potential of -600[V] and the charge generation efficiency of H$_2$Pc was 0.034.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.166-176
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• 1994

Ni base superalloys are composed of solid sohltion hardening elements(Co, Cr. Mo. W and so on) and $\gamma '$ precipitation hardening elements(A1, Ti, Nb, Ta and so on). To Improve the mechanical properties and oxidation resistanre of superalloys, rare earth elements(%r, Hf, Y and so on) are added to the inner substrate, or are used as coating materials. Their pffects on the growth rate and adhes~on of oxide are changed according to the kinds of oxides such as $AI_2O_3$ and $Cr_2O_3$. The effect of yttrium on the oxidation rate, grain size of oxide, internal structure, and crack resistance was investigated for two kinds of Ni-base superalloys. One in AF'115 superalloy containing Hf and the other is MA6000 superalloy containing $Y_2O_3$. They werr owid~zed at high temperature after yttrium surface modification using ion coater. Yttrium coating on the AF115 and MA6000 superalloys results in a marked change in the growth of the inner oxide. For AF115 superalloy, the degree of gram boundary segregation of $Cr_2O_3$, and prefer en^ tial oxidation of Hf are decreased, and the shape of inner oxidation layer was changed from triangle to plate type. For MA6000 superalloy, $Cr_2O_3$ oxide scale was transformed as outer oxidation layer of CrZOI and inner oxidation layer of $Cr_2O_3$.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.409-416
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• 1994

A double layered photoreceptor using phthalocyanine dye was made by dip-coating method. The under cutting layer(UCL) was coated with A1$\_$2/O$\_$3/ or polyamide, and the charge generation layer(CGL) was formed by .tau.-type metal-free phthalocyanine. The oxadiazole was used as a charge transport layer(CTL) and polycarbonate and poly(vinyl butyral) was employed as a host polymer. The .tau.-H$\_$2/Pc had an absorption peak around 780nm, which coincided with the emitting wavelengths of GaAlAs diode lasers. Maximum charge acceptance of CTL that gives thickness of 12.mu.m was -900V by corona charge of -6.0kV. In photo-induced discharge measurements, residual potential was less than -20V and sufficient for ordinary use, and sample films using of poly(vinyl butyral) was showed good charge retention. In printing test, drum that was employed polycarbonate as a host polymer showed the good print quality.

• Corrosion Science and Technology
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• v.2 no.1
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• pp.53-57
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• 2003

The MarM247 based superalloy (8wt.%Cr- 9wt.%Co- 3wt.%Ta- 1.5wt.%Hf- 5.6%wt.Al- 9.5wt.%W- Bal. Ni) specimens were diffusion aluminized by for types of pack cementation methods, and their coating structure and their high temperature oxidation resistance were investigated. The coated specimens treated at 973K in high aluminum concentration pack had a coating layer containing large hafunium rich precipitates, which were originally included in substrate alloy. After the high temperature oxidation test in air containing 30 vol.% $H_2O$ at 1273K ~ 323K, the deep localized corrosion which reached to the substrate were observed along with these hafnium rich precipitates. On the other hand, the coated specimens treated at 1323K using low aluminum concentration pack showed the coating layer without the large hafunium rich precipitates, and after the high temperature oxidation test at 1273K for 1800 ksec, it did not show the deep localized corrosion. The nickel electroplating before the aluminizing forms thick hafnium free area, and its high temperature oxidation resistance were comparable to platinum modified aluminizing coatings at 1273K.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.283-289
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• 2010

Physical properties of Plasma electrolytic oxidized 8 different kinds of Al alloys, A-1100, A-2024, A-5052, A-6061, A-6063, A-7075, ACD-7B and ACD-12 were investigated. The electrolyte for PEO was $Na_2SiO_3$ and NaOH and some alkali earthen metal salts system solution. $\eta$-alumina, as well as $\gamma$-alumina, was main crystal phase, which were ever reported. Also, $Al_{4.95}Si_{1.05}O_{9.52}$ was found only in this research. So we can conclude that the process conditions of PEO apparatus and composition and concentration of its electrolyte affects crystal structure and physical properties of PEO layers much more than the compositions of Al alloy.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.187-192
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• 2000

We prepared $SiO_2-Na_2O-R_mO_n$ thin films based on economics of water glass and investigated optical, mechanical properties of product thin films. Coating sol stabilized with 1 N HCl and 1 N $NH_4OH$, was fabricated by using water glass and calcium nitrate, and aluminum nitrate as starting materials. As-coated films on stainless steel, Si wafer and soda-lime-silica glass by spinning were finally annealed at 500, 750 and $900^{\circ}C$. Micro hardness and nitrogen content in film surface of annealed films were measured by Knoop hardness tester and EDX, respectively. Field Emission Scanning Electron Microscope (FE-SEM) and UV-VIS spectroscopy were adopted to analyze surface morphology and thickness and reflectance of our films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.175-182
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• 2008

This study is concerned with the evaluation of the corrosion resistance of coated semiconductor equipment parts with various processes. To select the appropriate basis for evaluation, replacement parts were observed during the semiconductor manufacturing process. This study also ran a dry corrosion test using $Al_2O_3$, which is mostly used as a coating material. This test quantitatively measured the efficiency of coated parts. Surface morphology, leakage current and breakdown voltage were also evaluated. This study showed that a dry corrosion process led to the drop of electrical properties, for example, the leakage current increase and the dielectric strength decrease. The surface morphology test displayed that surface damage is largely dependent on the exposure time to corrosive environments. By using the values that changed during the corrosion process, it may be possible to contrive a method to evaluate the efficiency of coated parts with various processes.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.546-551
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• 2021

To improve ferroelectric properties of PZT, many studies have attempted to fabricate dense PZT films. The AD process has an advantage for forming dense ceramic films at room temperature without any additional heat treatment in low vacuum. Thick films coated by AD have a higher dielectric breakdown strength due to their higher density than those coated using conventional methods. To improve the breakdown strength, glass (SiO₂-Al₂O₃-Y₂O₃, SAY) is mixed with PZT powder at various volume ratios (PZT-xSAY, x = 0, 5, 10 vol%) and coating films are produced on silicon wafers by AD method. Depending on the ratio of PZT to glass, dielectric breakdown strength and energy storage efficiency characteristics change. Mechanical impact in the AD process makes the SAY glass more viscous and fills the film densely. Compared to pure PZT film, PZT-SAY film shows an 87.5 % increase in breakdown strength and a 35.3 % increase in energy storage efficiency.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2001-2003
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• 2005

Various organic acid were used in order to prepare new metalorganic deposition solution for high quality $REBa_2Cu_3O_{7-{\delta}}$ (RE=Y, Eu, Gd) films. Prepared fluorine free MO precursor solution was coated on single crystal (001) $LaAlO_3$ (LAO) by dip coating method. Processing parameters such as oxygen partial pressure, water vapor, ramping rate and pyrolysis temperature etc havebeen controlled in order to make high $J_c$ films with a good epitaxial relationship with substrate. 0.5 micron-thick film was obtained by single coating and no crack appeared after calcination. Oxygen partial pressure was varied in the range of $100{\sim}1,000 ppm$ and conversion heat treatment was carried out at the temperature of $725{\sim}765^{\circ}C$. A critical transition temperature $(T_{c0})$ of 90K and a critical transport current density $(J_c)$ of $>0.5MA/cm^2$ (77K and self-field) were demonstrated for the YBCO film on (001) oriented LAO substrates with a thickness of 0.5 micron. $I_c$ was determined by utilizing a transport measurement. SEM and XRD investigations confirmed that films were grown epitaxially onto the LAO single crystal substrate. It is thought that fluorine free new MOD solutionis promising for high quality REBCO films.