• 한국세라믹학회지
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• 제50권2호
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• pp.108-115
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• 2013

Oxide coatings were prepared on Al-1050 substrates by an environment-friendly plasma electrolytic oxidation (PEO) process using an electrolytic solution of $Na_2SiO_3$ (8 g/L) and NaOH (3 g/L). The effects of three different duty cycles (20%, 40%, and 60%) and frequencies (50 Hz, 200 Hz, and 800 Hz) on the structure and micro-hardness of the oxide coatings were investigated. XRD analysis revealed that the oxides were mainly composed of ${\alpha}-Al_2O_3$, ${\gamma}-Al_2O_3$, and mullite. The proportion of each crystalline phase depended on various electrical parameters, such as duty cycle and frequency. SEM images indicated that the oxide coatings formed at a 60% duty cycle exhibited relatively coarser surfaces with larger pore sizes and sintering particles. However, the oxides prepared at a 20% duty cycle showed relatively smooth surfaces. The PEO treatment also resulted in a strong adhesion between the oxide coating and the substrate. The oxide coatings were found to improve the micro-hardness with the increase of duty cycle. The structural and physical properties of the oxide coatings were affected by the duty cycles.

• 한국결정성장학회지
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• 제4권3호
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• pp.238-244
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• 1994

보로실리케이트 유리기판과 석영기판을 사용하여 $800^{\circ}C~520^{\circ}C$의 온도 범위에서 용액 성장법에 의한 다결정 실리콘 박막의 성장에 관해 조사 하였다. 기판상에는 용애과의 젖음성을 좋게 해주기 위해 박막의 알루미늄츠오가 실리콘층이 증착되었으며, 용매로는 알루미늄과 실리콘옥사이드와의 반응에 의해서 일어난다. 결정립 크기가 수백 마이크론까지 이르는 실리콘을 얻을 수 있었으며, 석영기 판의 경우에는 보르실리 케이트 유리기판보다 강한 (111) 우선 성장 방향을 보여주고 있다.

• 한국표면공학회지
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• 제40권4호
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• pp.159-164
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• 2007

Transparent aluminum oxide films were deposited on polycarbonate (PC) substrates by inductively coupled plasma (ICP) assisted reactive sputtering. the oxygen flow rate was regulated by controlling the target voltage with a proportional integrate derivative controller. The PC substrate was treated with plasma prior to the deposition in order to the enhance the adhesive strength of the $Al_2O_3$ film. The characteristics of hardness, structure, density, transmittance, deposition rate, surface roughness and residual stress were investigated to estimate the possibility for the hard coating.

• 한국세라믹학회지
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• 제27권7호
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• pp.841-850
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• 1990

The electrical conductivity of SrTiO3 thick films, which has been prepared by screen printing and sintering on polycrystalline Al2O3 substrates, was determined as a function of oxygen partial pressure and temperature. The data showed that electrical conductivity was proportional to the -1/4th power of the oxygen partial pressure for the oxygen partial pressure range from 10-4-10-8 to 10-20 atm and proportional to Po2+1/4 for the oxygen partial pressure range from 10-6-10-4 to 1atm. And then n-p transition region of electrical conductivity moved to lower oxygen partial pressure region as the sintering temperature of thick film specimens increased under about 140$0^{\circ}C$. These data were consistent with the presence of small amounts of acceptor impurities in SrTiO3 thick film which have been diffused from Al2O3 substrate in the range of solid solubility limit.

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.297-302
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• 2014

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrode thin films with a resistivity of ~ 1,600 ${\mu}{\Omega}cm$ were grown on c-$Al_2O_3$ (0001) substrate. $ZnSnO_3$ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-$Al_2O_3$ (0001) substrates at a substrate temperature that ranged from 550 to $750^{\circ}C$ using Pulsed Laser Deposition (PLD). The secondary phase $Zn_2SnO_4$ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 ${\mu}C/cm^2$ and 48 kV/cm, respectively, were obtained in the ZTO film grown at $700^{\circ}C$ in 200 mTorr.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.56-56
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• 2010

We report a low-temperature fabrication of organic/inorganic nanohybrid dielectrics for organic thin film transistors. The self-assembled organic layers (SAOLs) were grown by repeated sequential adsorptions of C=C-terminated alkylsilane and metal (Al or Ti) hydroxyl with ozone activation, which was called "molecular layer deposition (MLD)". The $TiO_2$ and $Al_2O_3$ inorganic layers were grown by ALD, which relies on sequential saturated surface reactions resulting in the formation of a monolayer in each sequence and is a potentially powerful method for preparing high quality multicomponent superlattices. The MLD method combined with ALD (MLD-ALD) was applied to fabricate SAOLs-$Al_2O_3$-SAOLs-$TiO_2$ nanohybrid superlattices on polymer substrates at relatively low temperature. The MLD method is an ideal fabrication technique for various flexible electronic devices.

• 한국진공학회지
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• 제8권4B호
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• pp.514-518
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• 1999

Gold (Au) is not supposed to react with sapphire(single crystalline ) under thermodynamic equillibrium, therefore, a strong adhesion between these two dissimilar materials is not expected. However, pull test showed that the gold film sputter-deposited onto annealed and pre-sputtered sapphire exhibited very strong adhesion even without post-deposition annealing. Strongly and weakly adhered samples as a result of the pull testing were selected to investigate the adhesion mechanisms with Auger electron spectroscopy. The Au/ interfaces were analyzed using a new technique that probes the interface on the film using Auger electron escape depth. It revealed that one or two monolayers of Au-Al-O compound formed at the Au/Sapphire interface when AES in the UHV chamber. It showed that metallic aluminum was detected on the surface of sapphire substrates after irradiating for 3 min. with 7keV Ar+ -ions. These results agree with TRIM calculations that yield preferential ion-beam etching. It is concluded that the formation of Au-Al-O compound, which is responsible for the strong metal-ceramic bonding, is due to ion-induced cleaning and reduction of the sapphire surface, and the kinetic energy of depositing gold atoms, molecules, and micro-particles as a driving force for the inter-facial reaction.

• 한국세라믹학회지
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• 제40권9호
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• pp.909-915
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• 2003

알루미늄 전해캐패시터에서 양극산화막은 유전체로서 중요한 역할을 하는데 높은 캐패시턴스를 얻기 위하여 알루미늄 위에 ZrO$_2$ 막을 졸-겔법으로 코팅하고 양극산화시킨 후 이들이 특성을 연구하였다. 코팅과 건조를 4～10회 반복하여 제조된 막들을 300～$600^{\circ}C$에서 열처리하였으며 ZrO$_2$/Al 막을 양극산화 시킨 후 ZrO$_2$/Al-ZrO$_{x}$ /Al$_2$O$_3$의 세층이 알루미늄 기판 위에 형성되었고, $Al_2$O$_3$ 층의 두께는 열처리 온도가 증가함에 따라 ZrO$_2$ 막의 치밀화로 인해 감소하였다. ZrO$_2$ 막은 30$0^{\circ}C$에서도 미세한 결정질 구조를 가지고 성장하였으며, 열처리와 양극산화 후 나타나는 알루미늄박의 캐패시턴스는 저온에서 열처리한 박이 큰 값을 보이는데 이는 ZrO$_2$ 막 자체의 캐패시턴스가 큰 것이 기인한다. 400V로 양극산화한 후 ZrO 막을 코팅한 알루미늄박의 캐패시턴스는 코팅하지 않은 경우 보다 약 3배 정도의 큰 값을 보여 복합산화물층을 갖는 알루미늄박은 알루미늄 전해캐패시터에의 적용가능성을 보였다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.147-151
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• 1999

YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

• 한국재료학회지
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• 제18권1호
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• pp.22-25
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• 2008

In this study, calcium titanate $(CaTiO_3)$ gel was prepared by mixing calcium nitrate and titanium isopropoxide in 2-methoxy-ethanol. $CaTiO_3$ gel was single-layer coated on Ti-6Al-4V using a sol-gel dip-coating technique. The coating was calcined at $750^{\circ}C$ in air by utilizing a very slow heating rate of $2^{\circ}C/min$. The crystalline phases of the coating were characterized by x-ray diffraction using a slow scan rate of $1^{\circ}/min$. The morphology of the coating was analyzed by scanning electron microscopy. The corrosion behavior of Ti-6Al-4V samples coated with $CaTiO_3$ films were tested in an artificial saliva solution by potentiodynamic polarization and were quantified by the Tafel extrapolation method. The electrochemical parameters showed a considerable increase in the corrosion resistance for the $CaTiO_3$-coated Ti-6Al-4V samples compared to bare substrates.