• 한국세라믹학회지
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• 제31권10호
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• pp.1123-1132
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• 1994

Bi-Sr-Ca-Cu-O superconductor thin films were prepared on MgO and LaAlO3 substrates by MOCVD technique. The films deposited on MgO and LaAlO3 substrates became superconducting at 64 K and 70 K respectively. The measured critical current density of thin film deposited on LaAlO3 substrate was around 104 A/$\textrm{cm}^2$. After annealing at $700^{\circ}C$ for 3 hours, the critical transition temperature(Tc) of films deposited on LaAlO3 was changed from 70 K to 74 K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.799-802
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• 2003

[ $LaNiO_3$ ](LNO) thin films were deposited on various substrates as Si and $Al_2O_3$ by sol-gel process using lanthanum nitrate and nickel acetate. The structure and orientation of the films were characterized by X-ray diffraction. The orientation factors of films on Si(100), Si(111), $SiO_2/Si(100)$ and $Al_2O_3$were 97%, 63%, 73%, and 24% respective. The conductivity was $7.6{\times}10^{-3}{\Omega}{\cdot}cm$ with 10 times coating at Si(100) substrate.

• 한국세라믹학회지
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• 제34권9호
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• pp.921-926
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• 1997

Two NbCx-C1-x/Y2O3/Ti sputter-coated Al2O3 substrates (L 5.5 cm$\times$W 0.5 cm) were diffusion bonded together using hot press method at 95$0^{\circ}C$ for 3 hours under 1 MPa of applied pressure. 4 points bending tests were used to evaluate the mechanical performance of these precracked laminate beams. Two types of mechanical responses were observed: crack penetration through the interface for x=0.75, 1 and crack deflection into an interface for x=0.25, 0.5. The Al2O3/NbCx-C1-x/Y2O3/Ti system suggested here has been proves to be effective for the thermokinetical stability and tailorability of the interfaces of Al2O3/Ti composites at 95$0^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.289-293
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• 2007

ZnO thn films are grown on five kinds of oxide substrates including $c-Al_2O_3(0001),\;r-Al_2O_3(01-12)$, MgO(100), MgO(111), $NdGaO_3(110)$ by rf magnetron sputtering and effects substrate types on properties of ZnO thin films ate investigated. In order to compare the substrate effects one growth condition is selected and all the films are grown by the same growth condition. Structural and optical properties of the ZnO films ate different depending on the substrates although the films ate not epitaxial but polycrystalline. The ZnO film grown on $NdGaO_3(100)$ substrate shows the best overall properties among the films grown on substrates investigated in this study.

• 센서학회지
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• 제8권2호
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• pp.195-201
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• 1999

$Al_2O_3$ (알루미나 및 R-면 사파이어)기판 위에 c-축 $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) 박막을 펄스레이저 증착법을 이용하여 성장하였다. 완충층으로 사용하기 위해 $Al_2O_3$ 기판 위에 증착한 $CeO_2$ 박막의 결정성은 기판온도에 많은 영향을 받았다. $CeO_2$ 박막은 $800^{\circ}C$의 기판온도에서 $\alpha$-축방향으로 잘 성장하였으며, $CeO_2$ 완충층의 두께에 따라 YBCO/$CeO_2/Al_2O_3$ 박막의 초전도 특성은 큰 변화를 나타내었다. 알루미나 기판 위에서 $CeO_2$ 완충층의 두께는 약 $1200\;{\AA}$이하, 사파이어 기판의 경우 $100{\sim}1000\;{\AA}$ 범위에서 YBCO 박막은 양호한 초전도 특성을 나타내었으나, 그 보다 두껍게 성장시킬 경우 초전도 특성이 급격하게 나빠졌다. 알루미나 기판 위에 성장된 YBCO 박막의 임계온도는 83 K였으며, R-면 사파이어 기판 위에 성장된 YBCO 박막의 임계온도는 ${\geq}89.5\;K$였고, 임계전류밀도는 77K에서 $3{\times}10^6\;A/cm^2$로 나타났다.

• Journal of Magnetics
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• 제6권3호
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• pp.90-93
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• 2001

Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

• 마이크로전자및패키징학회지
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• 제5권2호
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• pp.53-58
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• 1998

Sintering and dielectric characteristics of substrates were estimated by mixing rate of alumina and potashborosilicate glass(PBSG) powders. PBSG powders were used 7761(corning code)and alumina powders were used in extra pure rate(99.9%) and had 0.1 ${\mu}$m mean size. After ball milling with organic additives green sheets which were casted by doctor blade machine were sintered at 800$^{\circ}C$ for 1∼3hrs. Microstructure, linear shrinkage and dielectric constant of substrates were surveyed in order to fabricate low-dielectric and low tem-perature sintering substrate.

• 한국세라믹학회지
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• 제29권2호
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• pp.83-88
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• 1992

New ceramic substrates firable at low temperature (<1000$^{\circ}C$) were prepared with mixture of alumina and glass powders in CaO-Al2O3-SiO2 system. The substrate of alumina 40 wt% and glass 60 wt%, which was fired between 900∼1000$^{\circ}C$, shows low dielectric constant (5∼8 at 1 MHz), specific gravity of 3.10, relatively low thermal expansion coefficient (5.5${\times}$10-6/$^{\circ}C$ at 40∼500$^{\circ}C$) and excellent surface roughness (0.4∼0.5 ${\mu}$Ra). These properties were thought to be superior to those of conventional Al2O3 ceramic substrates.

• 한국재료학회지
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• 제16권4호
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• pp.264-271
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• 2006

RF sputtering process was applied to produce thin hydroxyapatite(HAp) films on Ti-6Al-4V alloy substrates. The effects of different heat treatment conditions on the chemical composites between HAp thin films and Ti-6Al-4V alloy substrates were studied. After deposition, the HAp thin films were heat treated for 1h at $400^{\circ}C,\;600^{\circ}C\;and\;800^{\circ}C$ under the atmosphere, and analyzed O/M, FESEM-EDX and ESCA, respectively. Experimental results represented that interface of HAp thin films and Ti-6Al-4V alloy substrates was composed Ti-OH, TiO, TiN, $Al_2O_3,\;V_2O_3,\;VO_2$. pyrophosphate and decreased carbide followed by the increase of heat treatment temperature.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.58-62
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• 1999

We fabricated a new hairpin type HTS 2-pole microstrip Bandpass filter to operate at 5.8GHz. The fabrication method was pulsed laser deposition and YBCO films were deposited on ${\alpha}$-A1$_2O_3$ substrates with a CeO$_2$ thin layer as a buffer layer. We developed a new style hairpin type filter by using interdigitide innerpole. Compared to the saute size regular hairpin type filters, our filter had a lower center frequency, bandwidth and loss by an amount of 14.5%, 29.6%, 0.5488dB, respectively. The size of the filters were 13.7${\times}$3.3mm. We did simulations on the several types of band pass filters by using HFSS and serenade. We measured growth rate and Tc of YBCO films grown on CeO$_2$/ ${\alpha}$-A1$_2O_3$ substrates which were rotated while growing films.