• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.66-69
• /
• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.21 no.4
• /
• pp.596-601
• /
• 2020

Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO₂ in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

• Journal of the Mineralogical Society of Korea
• /
• v.19 no.1 s.47
• /
• pp.7-14
• /
• 2006

Melting slag generated from the lots of municipal incineration ash, which causes the one of big urban problems in modern industrial society, was used as starting material for the hydrothermal synthesis of zeolite. P-type zeolite has been successfully synthesized by the combined process of both 'hydrogelation' and 'clay conversion' method. Commercial sodium silicate was used as Si source, and $NaAlO_2$ was prepared by the reaction in a $Na_{2}O/Al_{2}O_{3}$ molar ratio of 1.2. The optimum conditions for zeolite synthesis was found to be the $SiO_{2}/Al_{2}O_{3}$ ratio in the 3.2 and 4.2 range, the $H_{2}O/Na_{2}O$ ratio in the 70.7 and 80.0 range, and more than 15-hour reaction time at $80^{\circ}C$, In the synthesized zeolite, inhomogeneous melting slag particles were disappeared and homogeneous P-type zeolite crystal was grown. The cation exchange capacity of the synthesized zeolite was determined to be approx. 240 cmol/kg.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.354-357
• /
• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• Journal of the Korean Ceramic Society
• /
• v.31 no.11
• /
• pp.1330-1336
• /
• 1994

Ta2O5 films were deposited on the p-Si(100) substrates by ECR-PECVD and annealed in O2 atmosphere. The thicknesses of Ta2O5/SiO2 layers were measured by an ellipsometer and a cross-sectional TEM. Annealing in O2 atmosphere enhanced the stoichiometry of the Ta2O5 film and reduced the impurity carbon content. Ta2O5 films were crystallized at the annealing temperatures above 75$0^{\circ}C$. The best leakage current characteristics and the maximum dielectric constant of Ta2O5/SiO2 film capacitor were observed in the specimen annealed at $700^{\circ}C$ and 75$0^{\circ}C$, respectively. The flat band voltage of the Al/Ta2O5/SiO2/p-Si MOS capacitor was varied in the range of -0.6~-1.6 V with the annealing temperature. The conduction mechanism in the Ta2O5 film, the variation of the effective oxide charge density with the annealing temperature, and the effective electric field distribution in the Ta2O5/SiO2 double layer were also discussed.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.3
• /
• pp.87-95
• /
• 1992

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.2
• /
• pp.67-72
• /
• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Korean Journal of Metals and Materials
• /
• v.49 no.11
• /
• pp.853-859
• /
• 2011

Compressive deformation behavior of Al-10Si-5Fe-1Zr (wt%) alloy preform fabricated by SPS(spark plasma sintering) of gas atomized powder was investigated in the temperature range from 380 to $480^{\circ}C$ and at strain rates from $1.0{\times}10^{-3}$ to $1.0{\times}10^{0}s^{-1}$. Stress-strain curves showed a peak stress (${\sigma}_p$) during initial stage of deformation, followed by a steady state flow at all temperatures and strain rates tested. The (${\sigma}_p$) decreased with both increase in temperature and decrease in strain rate. Nearly full densification was found to occur in the compressively deformed specimens irrespective of test condition. TEM observation revealed a restricted grain growth during steady state flow.

• Economic and Environmental Geology
• /
• v.21 no.1
• /
• pp.29-44
• /
• 1988

Equilibrium relations between garnet and orthopyroxene have been investigated by reversal experiments in the range of 20-45Kb and $975-1400^{\circ}C$ in the $FeO-MgO-Al_2O_3-SiO_2$(FMAS) system. A mixture of PbO with about 55 mol per cent $PbF_2$ was used as a flux and proved very effective. The Fe-Mg exchange reaction seems to have little or no compositional dependence at these conditions. Combination of the experimental results with the garnet mixing model of Ganguly and Saxena(1984) yields the following geothermometric expression for the common natural assemblages that can be represented essentially within the system $FeO-MgO-CaO-MnO-Al_2O_3-SiO_2$. $$T^{\circ}C=(1971+11.91P(Kb)+1510(X_{Ca}+X_{Mn})^{Gt}/(lnK_D+0.96)-273$$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.387-390
• /
• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.