• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1137-1143
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• 2001

In this study, glass-ceramics containing cordierite(2MgO$.$2Al$_2$O$_3$5SiO$_2$) as a major crystalline phase was prepared from MAS (MgO-Al$_2$O$_3$-SiO$_2$) glass system for the application to reflector. Glasses prepared with addition of TiO$_2$as a nucleating agent were crystallized by two-step heat treatment of nucleation and crystal growth. Then nucleation and crystal growth behavior were investigated and the influence of heat treatment schedule on the nature of crystal phases and the diffuse reflectance spectrum was investigated. As a result, cordierite and rutile were precipitated as a major crystalline phases for the glass-ceramics with the nucleation at 750$^{\circ}C$ for 3 hours and then crystallization at 1100$^{\circ}C$ for 5 hours, and this glass-ceramics showed the reflectance over 90% in 570∼2500nm specturm region.

• Journal of the Korean Ceramic Society
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• v.13 no.1
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• pp.30-34
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• 1976

In general the chemical composition of glass ceramics in Li2O-Al2O3-SiO2 system is similar to the composition of $\beta$-spodumene (Li2O-Al2O3-4SiO2). With the object to manufacture the glass ceramics which can be produced in the domestic pot the composition of glass was so settled at 1.0 Li2O.0.9Al2O3.6.0SiO2 in order to reduce the contents of Li2O, to prevent the corrosion of the pot and to decrease the cost of raw materials. 0.2 mole and 0.1 mole of the mixture of TiO2 and ZrO2 as nucleants were added to the basic composition of 1.0 Li2O-0.9Al2O3-6.0SiO2. Each sample was divided into two kinds with a TiO2/ZrO2 ratio of 2 to 1 and the other with a TiO2/ZrO2 ratio fo 1 to 1. Thermal expansion coefficient, the most important property of glass ceramics, was tested. The softening point and the melting point of the samples were observed by the use of a heating microscope. The results obtained were as follows. The manufacturing of glass ceramics seems to be possible in the industrial plant using the domestic pot. 1) The composition of the glass which can be melted in the domestic pot process was near 1.0 Li2O.0.9Al2O3.6.0SiO2. 2) The temperature range of crystal creation and crystal growth was between 850-94$0^{\circ}C$, and 5 hours holding the samples at the temperature range was enough to crystallize them. The major crystal was $\beta$-spdumene and there existed petalite partialy. 3) The thermal expansion coefficient fo the crystallized glass was negative. 4) The deforming point of the crystallized glass was 1435$^{\circ}C$.

• Electrical & Electronic Materials
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• v.5 no.2
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• pp.207-215
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• 1992

본 연구에서 xPb(A $l_{0.5}$N $b_{0.5}$) $O_{3}$-(1-x)Pb(Z $r_{0.52}$ $Ti_{o.48}$) $O_{3}$계의 조성변화에 따른 유전 및 압전특성에 관해 실험한 결과 다음과 같은 결론을 얻었다. PAN의 첨가량이 증가함에 따라 c축은 수축되고 a축은 팽창하여 tetragonality는 감소하였고 grain의 크기와 Curie온도 또한 PAN의 첨가량에 따라 감소하였으나 밀도와 유전상수는 PAN의 양이 5mol%까지 증가하다가 그 이상에서는 감소하는 경향을 보였다. PAN의 첨가량이 증가함에 따라 시편의 비저항은 증가하였고 Kp는 PAN의 양이 5mol%첨가시 60%로 최대치를 보였으나 Qm은 최소치를 나타내었다.다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.123-129
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• 2001

The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.160-160
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• 2010

Organic electronic devices require a passivation layer to ensure sufficient lifetime. Specifically, flexible organic electronic devices need a barrier layer that transmits less than $10^{-6}\;g/m^2/day$ of water and $10^{-5}\;g/m^2/day$ of oxygen. To increase the lifetime of organic electronic device, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. In this study, the passivation layer was deposited using single-process PEALD. The passivation layer, in our case, was a bilayer system consisting of $Al_2O_3$ films and a $TiO_2$ buffer layer on a poly (ether sulfon) (PES) substrate. Because the deposition temperature and plasma power have a significant effect on the properties of the passivation layer, the characteristics of the $Al_2O_3$ films were investigated in terms of density under different deposition temperatures and plasma powers. The effect of the $TiO_2$ buffer layer also was also addressed. In addition, the water vapor transmission rate (WVTR) and organic light-emitting diode (OLEDs) lifetime were measured after forming a bilayer composed of $Al_2O_3/TiO_2$ on a PES substrate.

• Journal of Korean Ophthalmic Optics Society
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• v.8 no.2
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• pp.111-117
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• 2003

We collected the domestic and foreign half-mirror coating lens for sunglasses. Their reflectance is measured using Spectrophotometer in order to analysis their optical property and the result which is calculated using Macleod program was compared with measured reflectance. In addition, we designed the new half-mirror coating lens with gold color using TiN material and investigated the optical property of the new half-mirror coating lens. The results obtained from analysis of half-mirror coating lenses are as follow : Two-tone half-mirror coating with silver color is fabricated with [air|$SiO_2$(or $Al_2O_3$)|Cr|glass]. The role of $SiO_2$(or $Al_2O_3$) on Cr improve the hardness of the lens and the thickness of the $Al_2O_3$ with 10 nm is good to show the lens silver color. Incase of color half-mirror coating lens. Blue system is designed by [air|$SiO_2$(66.3)|$TiO_2$(129.0)|$SiO_2$(62.9)|$SiO_2$(26.0)|$TiO_2$(120.3)|$SiO_2$(9.1)|glass], gold system [air|$SiO_2$(60.6)|$TiO_2$(86.2)|$SiO_2$(13.5)|$TiO_2$(86.8)|$SiO_2$(214.38)|glass], green system[air|$SiO_2$(74.3)|$TiO_2$(75.8)|$SiO_2$(44.3)|$TiO_2$(11.6)|$SiO_2$(160.8)|$TiO_2$(12.9)|$SiO_2$(183.3)|$TiO_2$(143.8)|glass], silver system[air|$SiO_2$(21.2)|$TiO_2$(49.7)|$SiO_2$(149.3)|glass]. White half-mirror coating lens has [air|$SiO_2$(17 nm)|$TiO_2$(43 nm)(or $ZrO_2$)|$SiO_2$(87 nm)|polysiloxane($4.46{\mu}m$|glass or CR-19]. It has half-mirror coaling lens which has about 19% reflectance and about 80% transmittance in the range of visible light(400~700nm). we designed the new half-mirror coating lens with gold color, the (x, y) value of the CIE is almost similar to the CIE value of [air|$SiO_2$(170 nm)|TiN(15 nm)|glass].

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2003.04a
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• pp.197-202
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• 2003

아세틸렌 화합물의 삼중결합은 2개의 $\pi$-결합을 가지고 있는 전자풍부 화학종으로서 다양한 촉매 system에 의해서 비교적 쉽게 부가중합반응이 진행되며 이를 통하여 공액구조 고분자를 쉽게 제조할 수 있다. 가장 간단한 삼중결합 화합물인 아세틸렌은 다양한 촉매 system에 의해서 쉽게 부가중합반응이 진행되어 분말상의 폴리아세틸렌이 합성되었으며 1974년 일본의 Shirakawa 등은 Ziegler-Natta 촉매의 일종인 Ti(OC$_4$H$_{9}$)$_4$-Al(C$_2$H$_{5}$)$_3$(Al/Ti = 3-4) 촉매 system을 사용하여 실험한 결과 은빛의 필름형 폴리아세틸렌의 합성에 성공하였다. (중략)

• Journal of Technologic Dentistry
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• v.43 no.3
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• pp.99-105
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• 2021

Purpose: This study aims to examine the stress distribution effect of tightening torques of different abutment screws in a custom-abutment implant system on the abutment-fixture connection interface stability using finite element analysis. Methods: The custom-abutment implant system structures used in this study were designed using CATIA program. It was presumed that the abutment screws with a tightening torque of 10, 20, and 30 N·cm fixed the abutment and fixture. Furthermore, two external loadings, vertical loading and oblique loading, were applied. Results: When the screw tightening torque was 10 N·cm, the maximum stress value of the abutment screw was 287.2 MPa that is equivalent to 33% of Ti-6Al-4V yield strength. When the tightening torque was 20 N·cm, the maximum stress value of the abutment screw was 573.9 MPa that is equivalent to 65% of Ti-6Al-4V yield strength. When the tightening torque was 30 N·cm, the maximum stress value of the abutment screw was 859.6 MPa that is similar to the Ti-6Al-4V yield strength. Conclusion: As the screw preload rose when applying each tightening torque to the custom-abutment implant system, the equivalent stress increased. It was found that the tightening torque of the abutment influenced the abutment-fixture connection interface stability. The analysis results indicate that a custom-abutment implant system should closely consider the optimal tightening torque according to clinical functional loads.

• Journal of Welding and Joining
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• v.35 no.2
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• pp.6-12
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• 2017

Ti-alloys have high specific strength and are widely used for the filed of space aeronautics plant. However, it is difficult to process Ti-Alloys due to its high yield strength and it cannot raise the machining speed because it has a possibility of catching fire while processing. In order to reduce the number of processes for the Ti-alloys, the researches related to Additive Manufacturing(AM) have been actively carried out at the moment. As for the initial stage of AM market related to Ti-alloys, it started to use the raw material of powder metal, and it is currently being developed based on welding. In this study, Interpass peening reduced the size of the primary ${\beta}$ grain in the z-axis direction, increased the nucleation site of ${\alpha}-colony$, and decreased the length and width of ${\alpha}$ laths as though interpass rolling. Interpass peening leads to an increase in yield/ultimate tensile strength without decrease elongation, resulting decrease in anisotropy of the material.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.288-294
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• 1999

In the flip chip interconnection using solder bump, the Under Bump Metallurgy (UBM) is required to perform multiple functions in its conversion of an aluminum bond pad to a solderable surface. In this study, various UBM systems such as $Al 1\mu\textrm{m} / Ti 0.2\mu\textrm{m} / Cu 5\mu\textrm{m}, Al 1\mu\textrm{m} / Ti 0.2\mu\textrm{m} / Cu 1\mu\textrm{m}, al 1\mu\textrm{m}/Ni 0.2\mu\textrm{m} / Cu 1\mu\textrm{m} and Al 1\mu\textrm{m}/Pd 0.2\mu\textrm{m} / Cu 1\mu\textrm{m}$ for flip chip interconnection using the low melting point eutectic 63Sn-37Pb solder were investigated and compared to their metallurgical properties. $100\mu\textrm{m}$ size bumps were prepared for using an electroplating process. The effects of the number of reflows and aging time on the growth of intermetallic compounds(IMC) were investigated. $Cu_6Sn_5$ and $Cu_3Sn$ IMC were abserved after aging treatment in the UBM system with thick coper $(Al 1\mu\textrm{m}/Ti 0.2\mu\textrm{m}/Cu 5\mu\textrm{m})$. However only the $Cu_6Sn_5$ was detected in the UBM system with $1\mu\textrm{m}$ thick copper even after 2 reflow and 7 day aging at $150^{\circ}C$. Complete Cu consumption by Cu-Sn IMC growth gives rise to a direct contact between solder inner layer such as Ti, Ni and Pd, and hence to possibly cause reactions between two of them. In this study, however, only for the Pd case, IMC of PdSn. was observed by Cu consumption. UBM interfacial reactions with s이der affected the adhesion strength ot s이der balls after s이der reflow and annealing treatment.