• Korean Journal of Materials Research
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• v.7 no.2
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• pp.157-161
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• 1997

The crystallographic site dependent substitution of $^{18}O$ for $^{16}O$ in $Bi_{2}Sr_{2}Ca_{0.8}Y_{0.2}Cu_{2}^{16}O_{8+\delta}$ has heen investigated. In the Kaman spectra of $Bi_{2}Sr_{2}Ca_{0.8}Y_{0.2}Cu_{2}^{16}O_{8+\delta}$ three prominent Raman bands are observed at 297. 464, and $623cm^{-1}$. As the $^{16}O$ arc replaced hy $^{18}O$, all the three bands shift to lower wavewnumbers. The rate of this isotopic shift is similar for the hands at 397 and $464cm^{-1}$. whereas it is quite slower for the hand at $623cm^{-1}$ '['his implys that the $^{16}O-^{18}O$ exchange reaction is crystallographic sites dependent. .Assuming a tetragonal symmetry, we assign the bands at 623. 464, and $297cm^{-1}$ to the vibrations of $O_{pl}(A_{g}),\;O_{ap}\;and\;O_{Bi}$ respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.170-175
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• 2001

It was possible to grow the $Al_{2}O_{3}$ based $Y_{3}A_{5}O_{12}(YAG),ZrO_{2}$ binary and ternary eutectic fibers using micro-pulling down method with a growing rate of 0.1~15 mm/min. While $Al_{2}O_{3}/ZrO_{2}$ showed cellular-lamellar structure, $Al_{2}O_{3}$/YAG and $Al_{2}O_{3}$/YAG/$ZrO_{2}$ternary eutectic fibers showed homogeneous Chinese script lamellar structures. The microstructures of $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers changed with solidification rate from lamellar pattern to cellular structure. The interlamellar spacing agreed with the inverse-square-root dependance on pulling rate according to $\lambda$=$kv_p\;{-1/2}$. $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers recorded the highest tensile strength of about 1560MPa at room temperature. $Al_2O_3/YAG/ZrO_2$ternary eutectic fiber showed excellent thermal stability to $1200^{\circ}C$ without significant decrease. The maximum strength of ternary eutectic fibers recorded were 1100MPa at $25^{\circ}C$ and 970MPa at $1200^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.731-739
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• 1993

R-curve measurements were performed on Al2O3(matrix)-ZrO2-SiC whisker composite and Al2O3-ZrO2, Al2O3-SiC whisker composites in the favor of comparing the effect of ZrO2 and SiC whisker, as a second phase, to Al2O3 matrix. Al2O3-SiC whisker and Al2O3-ZrO2-SiC whisker were fabricated by hot pressing at 1$700^{\circ}C$, 15MPa and Al2O3-ZrO2 by pressureless sintering at 1$600^{\circ}C$. A controlled flaw/strength technique was utilized to determine fracture resistance as a function of crack extension and R-curve behaviour was determined from the relationship which is KR=K0(Δa)m. R-curveresults were KR=6.173$\times$Δa0.031 for Al2O3-ZrO2, KR=18.796$\times$Δa0.172 for Al2O3-SiC whisker and KR=11.96$\times$Δa0.110 for Al2O3-ZrO2-SiC whisker composite. From the analysis of R-curve and expeirmental data above three composites, it is found that R-curve behaviour of Al2O3-ZrO2-SiC whisker composite was dominated initially by the strengthening effect of ZrO2 and after, some extended crack were influenced by the effect of SiC whisker. Analysis of SEM and X-ray data revealed that whisker bridging in the crack wake and whisker pull-out mechanisms were the main mechanism for the R-curve behaviour.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.15 no.1
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• pp.83-90
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• 2017

The pyroprocessing of spent nuclear fuel generates LiCl-KCl eutectic waste salt containing radioactive rare earth nuclides. It is necessary to develop a simple process for the treatment of LiCl-KCl eutectic waste in a hot-cell facility. In this study, capture and solidification of a rare earth nuclide (Nd) in LiCl-KCl eutectic salt using an inorganic composite with a $Li_2O-Al_2O_3-SiO_2-B_2O_3$ system was conducted to simplify the existing separation and solidification process of rare earth nuclides in LiCl-KCl eutectic waste salt from the pyroprocessing of spent nuclear fuel. More than 98wt% of Nd in LiCl-KCl eutectic salt was captured when the mass ratio of the composite was 0.67 over $NdCl_3$ in the eutectic salt. The content of $Nd_2O_3$ in the Nd captured-composite reached about 50wt%, and this composite was directly fabricated into a homogeneous and chemical resistant glass waste in a monolithic form. These results will be utilized in designing a process to simplify the existing separation and solidification process.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.389-395
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• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• Journal of the Korean Ceramic Society
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• v.23 no.2
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• pp.13-20
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• 1986

Composite polycrystals including ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystal which have needlelike regular structure are useful for the high resolution optical devices. For the purpose of obtaining the composite polycrystals described above the melts of eutectic composition in the three eutectic systems including $6Bi_2O_3$.$SiO_2$ composition were unidirectionally solidified at a rate of 0.05 and 0.25 cm/h under a thermal gradient of 10$0^{\circ}C$/m. Composite polycrystals of relatively regular structure in which needlelike ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystals were arrayed in parallel with $2Bi_2O_3$.$B_2O_3$ crystal matrix were obtained when the eutectic melt of $6Bi_2O_3$.$SiO_2 -2Bi_2O_3$.$B_2O_3$ system was solidified at a rate of 0.25 cm/h. Partial structural irregularity however was found in the obtained composite polycrystals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.797-800
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• 2002

Instead of a solution process producing amorphous $LiV_3O_8$ form, we prepared Lithium vanadate glass by melting $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ composition in pt. crucible and by quenching on the copper plate. From the crystallization of $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$, we could abtain glass-ceramics having crystal phase, LiV3O8 from glass matrix. The material heat-treated at lower-temperature, $250^{\circ}C$ had less crystalline and lower capacity, But the material heat-treadted at higher-temperature, $330^{\circ}C$ had higher capacity and $Li_2O-P_2O_5-V_2O_5$ glass-ceramics had higher capacity than $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics.

• Korean Journal of Crystallography
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• v.10 no.1
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• pp.51-55
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• 1999

Cesium titanium(III) pyrophosphate 화합물인 CsTiP2O7을 합성하고 X절 회절법을 이용하여 그 결정구조를 해석하였다. 이물질은 단사정계의 P21/a 공간군으로 결정화되었고 a=8.369(2) , b=10.208(2) , c=7.752(1) , β=104.77(2)o, V=640.4(2) 3, and Z=4이다. 이 물질의 구조는 모서리를 공유하고 있는 TiO6 팔면체와 P2O7 pyrophosphate group들로 구성된 framework로 구성되어 있으며 그 결과로 형성된 tunnel 안에는 Cs+이온이 존재한다. CsTiP2O7은 ATiP2O7(A=K, Rb)와 KAIP2O7 그리고 AMoP2O7(A=K, Rb, Cs)등 다른 +3금속 pyrophosphate들로 유사한 구조를 가지고 있다. 이 물질은 [Cs+][Ti3+][P2O74-]의 식으로 표현할 수 있다.

• Journal of Digital Contents Society
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• v.19 no.4
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• pp.661-671
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• 2018

The avoidance tendency of voice call in younger generation facilitates the growth of mobile O2O service that utilizes Messaging. This study adopted and elaborated original concepts of telephone apprehension to apply phone anxiety to O2O. We examined previous researches related to the ubiquity of service quality, communication ability and anxiety, and then conducted a survey to understand the consciousness of mobile O2O service users. The results show that users with high message intimacy and users with poor logicality are afraid of voice calls. The mobile O2O service is considered useful as a means to replace an unstable situation. In this study, we considered individual characteristics of acceptance factor of O2O mobile service technology, and it was a new attempt to expand telephone apprehension characteristic reflecting current situation. In addition, the different results of this research from prior studies that examined the relationships among apprehension, usefulness, and continuous use intentions might be helpful to expand and sophisticate the research area.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.