• Korean Journal of Optics and Photonics
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• v.13 no.1
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• pp.32-37
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• 2002

Passive polarization mode splitters at λ= 1.55 ${\mu}{\textrm}{m}$ were designed and fabricated based on Ti:x-cut LiNbO$_3$ single-mode optical waveguide and two-mode interference theory. The splitting ratio with waveguide width 8 ${\mu}{\textrm}{m}$, branching angle 0.55$^{\circ}$ and interfering length 470 ${\mu}{\textrm}{m}$ showed 16.18 dB, 21.25 dB for TE and TM input polarization modes, respectively. Polarization cross-talk of -16.28 dB and -21.28 dB for TE and TM modes was achieved. Total insertion losses of 2.24 dB/cm (TE) and 2.41 dB/cm (TM) were also measured. The devices operated nearly wavelength independently over a range or 30 nm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.140-152
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• 1995

Derived was the scalar wave equation of optical fibers. Based on the derived equation, the dispersion characteristics of arbitrarily profiled fibers were analyzed. We applied the 1-D FEM employing quadratic interpolation fucntions to solve the scalar wave equation. To find the optimum index distribution of a fiber that has the ultra-low total dispersion, we analyzed QC fibers as objects. Adding 2$_{nd}$ and 3$_{rd}$ clads to DC fiber, we investigated the change of dispersion characteristics. We found the QC fiber parameters for which the dispersion was ultra-low flattened, less than 0.5 ps/km.nm for ${\lambda}=1.4~1.6{\mu}m$, and the dispersion value was as low as 0.20 ps/km.nm at ${\lambda}=1.55{\mu}m$.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.34-35
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• 2001

The wavelength demultiplexer is an essential component in optical transmission systems using wavelength-division multiplexing(WDM), which can increase the number of channels and information capacity of optical fibers. For optical telecommunication, much attention has been given to demultiplexing two wavelengths in the 1.3${\mu}{\textrm}{m}$ of low dispersion band and 1.55${\mu}{\textrm}{m}$ of low loss window. Various integrated-optical devices have been proposed to perform this function, including conventional directional couplers, asymmetric Y-branching devices, asymmetric Mach-Zehnder interferometers and two-mode interference devices. (omitted)

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.9
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• pp.605-610
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• 2001

Electrostatic comb-drive microactuators with sub-micron gap were fabricated and tested. We designed and fabricated two type of electrodes which are rectangular and triangular tip. The fabricated microactuators with triangular tip resulted in the electrode gaps in the range of 0.55 ${\mu}{\textrm}{m}$~1.35 ${\mu}{\textrm}{m}$ Displacement of 1 ${\mu}{\textrm}{m}$ and electrostatic force of 2.3 $\mu$N were observed in a triangular-tip microactuator with 0.55 ${\mu}{\textrm}{m}$ gap when a DC drive voltage of 13 volts was applied. Measured 1st resonance frequency of microactuators was about 23 kHz.

• The Korean Journal of Soil Zoology
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• v.7 no.1_2
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• pp.45-49
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• 2002

Meloidogyne marylandi Jepson & Golden, 1987 is described from Zoysia grass collected in Cheonan, Korea. The nematode did not produce galls, and females were generally surrounded by a massive egg sac. Perineal patterns of female were a high to rounded arch with shoulders, wavy striae usually forming a rough. Vulva and anus were sunken. Second-stage juvenile body length was 390.3 $\mu\textrm{m}$ (290-430), tail length 55.1 $\mu\textrm{m}$ (49-59) and lateral field with 4 incisures. Male stylet length was 18.1 $\mu\textrm{m}$ (15-24), spicules length 26.2 $\mu\textrm{m}$ (23-29) and lateral field with 4-5 incisures.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.469-472
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• 1998

InGaAsP/InP ridge waveguide(RWG) distributed feedback(DFB) lasers (LD) operating at 1.55.mu.m were fabricated by a two step MOCVD process. The CW laser threshold and the slope efficiency from these lasers are 22.5mA and 0.127mW/MA perfacet at room temperature. Single longitudinal mode operation with side mode suppression of more than 30dB is obtained at 5mW. The temperature sensitivity and characteristic temperature (T$_{0}$) from DFB lasers were obtained 1.0.angs./.deg. C and 50.3K between 20.deg. C and 70.deg. C, respectively.y.

• 한국정보통신설비학회:학술대회논문집
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• 2003.08a
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• pp.35-37
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• 2003

본 논문에서는 진행파형 전계 흡수 광 변조기를 3차원 FDTD를 이용하여 도파관의 폭과 진성영역의 두께 그리고 N-도핑층의 도핑수준을 변화시키면서 최적화된 구조를 설계하였다. 제작된 소자의 구조는 진성영역의 두께는 $0.9{\mu}m$, 도파관의 폭은 $6{\mu}m$이며 전체 소자의 길이는 $700{\mu}m$ 이다. 제작된 소자의 마이크로파 특성을 측정하였으며 마이크로파 특성과 광 특성을 사용하여 주파수 응답특성을 추정하였다. 소자의 길이가 $400{\mu}m$ 일 때 17.8 GHz의 주파수 응답특성을 얻었다.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.10-11
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• 2000

광통신을 이용한 근거리 전송과 장거리 전송에서 1.3 및 1.55 $mu extrm{m}$ 파장 영역의 빛이 사용되고 있다. 향후, 각 가정마다 광선로를 연결하는 Fiber-to-the-home (FTTH)의 개념과 광CATV가 발전함에 따라 1.3 및 1.55 $\mu\textrm{m}$ 빛을 검출하는 소자와 송신하는 소자가 필요하게 된다. 본 논문에서는 이러한 다중파장을 검출할 수 있는 집적소자를 제작 및 측정하였다. 본 논문에서 사용된 epitaxial layer의 구조는 N-InP 기판 위에 1 $\mu\textrm{m}$의 n-InP buffer층, 5층의InGaAs/InGaAsP 다중양자우물과 0.2 $\mu\textrm{m}$ InGaAsP separate confinement heterostructure (SCH) 층, 0.5$\mu\textrm{m}$ InP clad층과 0.1 $\mu\textrm{m}$ InGaAs cap 층으로 구성되어있다. 모든 epi 층은 InP 기판에 격자 정합이 되어있다. 다중양자우물구조는 84 $\AA$의 InGaAs 우물층과 100 $\AA$의 InGaAsP 장벽층으로 구성되며, 상온에서 0.787 eV (1.575 $\mu\textrm{m}$)의 bandgap energy를 갖도록 설계하였다. (중략)

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.59-59
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• 2001