• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.15-17
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• 2006

[ $YBa_2Cu_3O_{7-{\delta}}$ ] superconductor films have been prepared on silver substrates by electrophoretic deposition. As silver does not react with $YBa_2Cu_3O_{7-{\delta}}$ compound and has little influence on its superconductivity, it is usually doped in $YBa_2Cu_3O_7$ to improve the strength of the material and eliminate micro cracks. It has been proved that Ag additive can lower the melting temperature of $YBa_2Cu_3O_{7-{\delta}}$ and act as linking bridge among $YBa_2Cu_3O_{7-{\delta}}$ particles, thus in this paper Ag doped $YBa_2Cu_3O_{7-{\delta}}$ thick films are prepared by electrophoretic co deposition. As there are only some referenced experience formula and models for co electrophoretic deposition and does not exist unified explanation, the behavior of Ag particles during co electrophoretic deposition is also studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.351-354
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• 1998

The formation of the $YBa_2Cu_30_{7_\delta}$(Y123) thick films has been investigated by a surface diffusion Imcess between $3BaCu0_2$+2CuO composite coating powder and a $Y_2BaCuO_5$(Y211). This reaction has been studied in the temperature of $930^{\circ}C$ and $940^{\circ}C$ for 2h to 10h in an oxygen atmosphere. The Y211 substrates becomes covered by co-precipitation of Y123 grains and CuO inclusions. X-ray diflractotnctn. revealed that the lager consisted of an orthorhombic crystal structure. The maximum Jc of $400A/\textrm{cm}^2$ is abtained when the specimen was heat-treated at $930^{\circ}C$ for 6h on the Y211 substrate.

• Progress in Superconductivity and Cryogenics
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• v.10 no.1
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• pp.1-5
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• 2008

The effect of $BaCeO_3$ doping on the critical current density of YBCO film by TFA-MOD method was studied. $BaCeO_3$ doping was made by two method; one is direct addition of $BaCeO_3$ nano-sized powder prepared by citrate process followed by grinding with planetary ball mill for 10 hours. Another is addition of Ba-Ce precursor solution prepared with Ba-acetate and Ce acetate dissolved in TFA to the YBCO-TFA precursor solution. The film was made by standard dip coating and heat treatment process with conversion temperature of $790^{\circ}C$ in 1000 ppm oxygen containing moisturized Ar gas atmosphere. The direct addition of $BaCeO_3$ powder resulted in YBCO film with good epitaxial growth and no evidence of second phase formation. The addition through precursor solution resulted in the increase of critical current density upto 30 at% doping and uniform dispersion of $BaCeO_3$ fine inclusion was confirmed by SEM-EDX.

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.23-23
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• 2008

• Progress in Superconductivity
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• v.2 no.2
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• pp.86-91
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• 2001

Temperature dependences of the unloaded Ｑ(Ｑ$_{0}$) and the resonant frequency ( $f_{0}$) of YB $a_2$C $u_3$ $O_{7-{\delta}}$ (YBCO) microstrip ring resonators and rutile-loaded cylindrical cavity resonators were measured at low temperatures. Dc magnetron-sputtered YBCO films grown on Ce $O_2$-buffered r-cut sapphire (CbS) substrates were used fur this purpose. The surface resistances ( $R_{s}$) of YBCO films measured by both a microstrip ring resonator and a TE $01\delta$/ mode rutile-loaded cylindrical cavity resonator are compared with each other. It turned out that the values of $R_{s}$ measured by the microstrip resonator technique are comparable to those by the rutile-loaded resonator technique at temperatures lower than ~50 K. However, above 50 K, the $R_{s}$ measured by the microstrip resonator technique appeared higher according to the temperature. Our results show that the current crowding effects near the edge of a microstrip resonator become more significant at temperatures near the critical temperature.emperature.e.e.e.e.e.e.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.51-55
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• 2003

SrTiO₃ (STO) thin fims were deposited on the biaxially textured Ni-3 wt%W alloy substrates to be used as a single buffer layer for YBa₂CU₃O/sub 7-8/(YBCO) coated conductor. Thin films of YBCO and STO were deposited using pulsed laser. The deposition condition for epitaxial growth of STO on the textured metal was identified, and YBCO coated conductor with a single STO buffer layer with critical current density of 1.2 MA㎠ at 77 K under zero magnetic field and critical temperature of 86 K, was fabricated.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.801-804
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• 2006

[ $GdAlO_3(GAO)$ ] buffer layer for $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ coated superconductor wire was fabricated by sol-gel processing. Precursor solution was prepared by dissolving 1:1 stoichiometric quantaties of gadolinium nitrate hexahydrate and aluminum nitrate nonahydrate in methanol. The solution was spin-coated on $SrTiO_3(STO)$(100) single crystal substrates and heated at $1000^{\circ}C$ for 2h in wet $N_2-5%\; H_2$, atmosphere. A SEM(scanning electron microscopy) observation of the surface morphology of the GAO layer has shown that it has a faceted morphology indicating epitaxy. It was shown from x-ray diffraction(XRB) that GAO buffer layer was highly c-axis oriented epitaxial thin film with both good out-of-plane($FWHM=0.29^{\circ}$ for the (002) reflection) and in-plane ($FWHM=1.10^{\circ}$ for the {112} reflection) alignment.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.195-201
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• 1999

C-axis oriented $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown on $Al_2O_3$ (alumina and R-plane sapphire) substrates by a pulsed laser deposition method. The crystallinity of the $CeO_2$ buffer layer on sapphire substrate exhibit a strong dependence on the deposition temperature, resulting in the growth of a-axis orientation at $800^{\circ}C$. The superconducting properties of YBCO thin films on $Al_2O_3$ substrates showed strong dependence on both thickness and crystallinity of the $CeO_2$ buffer layer. Critical temperature of YBCO film on alumina substrate was ${\sim}83\;K$. In the case of R-plane sapphire substrate,

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.57-57
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• 2006