• Analytical Science and Technology
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• v.5 no.1
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• pp.115-120
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• 1992

The upper limit of solid solution of $Al_2O_3$ in $LiTaO_3$ was investigated using X-ray diffraction and Raman spectroscopy. By substituting cations in $LiTaO_3$ with $Al^{3+}$, the melting temperature was lowed and the ferroelectric properties can be improved. It is easier at lower temperature to fabricate the single crystal used for SAW filters and IR sensors. From the measured lattice constants and Raman band broadening, the solubility limit was X=0.25mol in $Li_{1-X}Al_{2X}Ta{1-X}O_3$, above which $Al_2O_3$ was obsered as a second phase. The Raman band of sintered $LiTaO_3$ was compared with that of the single crystal to see the effect of grain size on the band broadening.

• Korean Journal of Materials Research
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• v.29 no.9
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• pp.559-566
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• 2019

$Lu(Nb,Ta)O_4:Eu^{3+}$ powders are synthesized by a solid-state reaction process using LiCl and $Li_2SO_4$ fluxes. The photoluminescence (PL) excitation spectra of the synthesized powders consist of broad bands at approximately 270 nm and sharp peaks in the near ultraviolet region, which are assigned to the $Nb^{5+}-O^{2-}$ charge transfer of $[NbO_4]^{3-}$ niobates and the f-f transition of $Eu^{3+}$, respectively. The PL emission spectra exhibit red peaks assigned to the $^5D_0{\rightarrow}^7F_J$ transitions of $Eu^{3+}$. The strongest peak is obtained at 614 nm ($^5D_0{\rightarrow}^7F_2$), indicating that the $Eu^{3+}$ ions are incorporated into the $Lu^{3+}$ asymmetric sites. The addition of fluxes causes the increase in emission intensity, and $Li_2SO_4$ flux is more effective for enhancement in emission intensity than is LiCl flux. The substitution of $Ta^{5+}$ for $Nb^{5+}$ results in an increase or decrease in the emission intensity of $LuNb_{1-x}Ta_xO_4:Eu^{3+}$ powders, depending on amount and kind of flux. The findings are explained using particle morphology, modification of the $[NbO_4]^{3-}$ structure, formation of substructure of $LuTaO_4$, and change in the crystal field surrounding the $Eu^{3+}$ ions.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.129-136
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• 2006

The high velocity oxy-fuel sprayed coatings of 38Ni-23Co-20Cr-11Al-3Y-5Ta, 25Ni-34Co-20Cr-11Al-3Y-2Re and 32Ni-34.5Co-22Cr-11Al-0.5Ir (in wt%) were oxidized at 1000 and $1100^{\circ}C$ in air in order to find the alloying effect of Ta, Re and Ir on the oxidation properties of the NiCoCrAlY-base coatings. The primary phase of the coatings was $Ni_3Al$. The oxides formed on the coatings consisted primarily of ${\alpha}-Al_2O_3$, together with some $CoCr_2O_4,\;CoAl_2O_4$, and $Al_5Y_3O_{12}$. Tantalum oxidized to $Ta_2O_5$ and $Ta_2O_{22}$. However, no oxides of Re and Ir were detected by XRD owing to their thermodynamic inertness and/or their small amount.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.285-289
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• 2001

We investigated that each site was substituted by new chemical components in Langasite ($La_3Ga_5/SiO_{14}$)-type structure with superior piezoelectric characteristics than $La_3Ga_5/SiO_{14}$. In this study $Ca_3TaGa_5Si_{2}O_{14}$ was synthesized by soilid-state reaction and grown by the $\mu$-PD(micro-pilling-down)and Cz technique. Lattice parameter and chemical composition was investigated by XRD and EPMA respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1355-1356
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• 2006

The microwave dielectric properties of the $Ba_{5}Ta_{4}O_{15}$ ceramics with sintering temperature were investigated. All sample of the $Ba_{5}Ta_{4}O_{15}$ ceramics prepared by conventional mixed oxide method and sintered at $1450^{\circ}C{\sim}1575^{\circ}C$. Porosity of the $Ba_{5}Ta_{4}O_{15}$ ceramics was reduced with increasing sintering temperature. The bulk density, dielectric constant and Qualify factor increased with increasing sintering temperature. In the case of $Ba_{5}Ta_{4}O_{15}$ ceramics sintered at $1550^{\circ}C$, The bulk density, dielectric constant and quality factor were $7.31g/cm^2$ and 27.4, 30,635GHz, respectively.

• Current Optics and Photonics
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• v.8 no.3
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• pp.230-238
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• 2024

The refractive index is a key material-design parameter, especially for high-refractive-index glasses, which are used for precision optics and devices. Increased demand for high-precision optical lenses produced by the glass-mold-press (GMP) process has spurred extensive studies of proper glass materials. B₂O₃, SiO₂, and multiple heavy-metal oxides such as Ta₂O₅, Nb₂O₅, La₂O₃, and Gd₂O₃ mostly compose the high-refractive-index glasses for GMP. However, due to many oxides including up to 10 components, it is hard to predict the refractivity solely from the composition of the glass. In this study, the refractive index of optical glasses based on the B₂O₃-La₂O₃-Ta₂O₅-SiO₂ system is predicted using machine learning (ML) and compared to experimental data. A dataset comprising up to 271 glasses with 10 components is collected and used for training. Various ML algorithms (linear-regression, Bayesian-ridge-regression, nearest-neighbor, and random-forest models) are employed to train the data. Along with composition, the polarizability and density of the glasses are also considered independent parameters to predict the refractive index. After obtaining the best-fitting model by R² value, the trained model is examined alongside the experimentally obtained refractive indices of B₂O₃-La₂O₃-Ta₂O₅-SiO₂ quaternary glasses.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.18-19
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• 2006

In this study, dielectric properties of the ${Mg_5}{B_4}{O_{15}}$ (B=Ta, Nb) cation-deficient perovskite ceramics and its oscillator application are investigated. The cation-deficient perovskite ceramics are prepared through the solid-state route. According to the XRD pattern, ${Mg_4}{Ta_2}{O_9}$ and $Mg{Ta_2}{O_6}$ phase existed in calcined and sintered ${Mg_5}{Ta_4}{O_15}$ powder. Also ${Mg_5}{Ta_4}{O_{15}}$ phase added with increasing sintering temperature. In the case of calcined and sintered ${Mg_5}{Nb_4}{O_{15}}$ powder, single phase of ${Mg_5}{Nb_4}{O_{15}}$ is appeared. In the case of the ${Mg_5}{Ta_4}{O_{15}}$ and ${Mg_5}{Nb_4}{O_{15}}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, $-10.91ppm/^{\circ}C$ and 14, 37,350 GHz, $-52.3\;ppm/^{\circ}C$, respectively. Simulated DR with ${Mg_5}{Ta_4}{O_{15}}$ ceramics had the operating frequency of 10.99 GHz and S(2,1) of -29.795 dB. Size of manufactured oscillator was $56{\times}48{\times}34\;mm^3 and operated at 11.93 GHz. Power output and second harmonic of oscillator were +13.61 dBm and -23.81 dBc at 23.85 GHz, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.2 no.2
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• pp.31-40
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• 1995

Donor dopant로 WO3, Ta2O5 및 Nb2O5를 첨가한 Zr0.8Sn0.2TiO4 세라믹스의 유전상수 $\varepsilon$r 품 질계수 Q 및 공진주파수의 온도계수 rf에 대하여 연구하였다. 139$0^{\circ}C$에서 32시간 소결시 donor dopant 첨가량에 따른 ZST의 유전상수는 소결밀도의 변화 거동과 잘 일치하였다. 5.5 GHz에서 측정 한 ZST의 품질계수 Q는 ~0.5 mol% WO3 Ta2O5 및 Nb2O5 첨가에 의해 6800에서 8500 정도로 증가 하였다. ZST의 $\tau$f는 0.3 mol%까지의 WO3 첨가량 증가에 따라 0 ppm/$^{\circ}C$에서 -4.6 ppm/$^{\circ}C$까지 음 의 값으로 직선적으로 감소하였으며 0.4 mol% 범위의 Ta2O5 및 Nb2O5 첨가에 의해 -7 ppm/$^{\circ}C$ 까지 직선적으로 감소하였다.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.310-315
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• 1993

The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.74-74
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• 1996