• Journal of the Korean Institute of Gas
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• v.2 no.4
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• pp.34-41
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• 1998

To oxide film, $A1_2O_3,\;Ta_2O_5$ and $ZrO_2$, coated on stainless steel (SUS410, SUS304) and pure Fe using RF magnetron sputtering method, the corrosion resistance on oxide coatings was studied using electrochemical measurement. Also, the adherence between film and substarte was studied. The adherence index ( $\chi$ ) was determined by the measure of micro hardness test. In this paper, we know that oxide film coated on SUS304 have better corrosion resistance than that coated on SUS410. In oxide film, the difference of corrosion resistance due to crystal structure have not been showed. In evaluating defect area rate of ceramic coated materials, CPCD method can be used effectively. In the micro-hardness test, with $1{\mu}m$ thickness film, it has only one the value of $\chi$. Above $2{\mu}m$ thickness film, however, get another value of $\chi$ as the cracks in film. The oxide film adhere well on the mild materials such as pure steel than high intensity materials like stainless.

• Horticulture, Environment, and Biotechnology : HEB
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• v.59 no.6
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• pp.847-856
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• 2018

This research aimed to evaluate the effectiveness of hot water ($43-53^{\circ}C{\cdot}5min^{-1}$; $47^{\circ}C{\cdot}2-6min^{-1}$), 1-methylcyclopropene (1-MCP) at $50-300nL\;L^{-1}$ and a combination of hot water ($47/49^{\circ}C{\cdot}5min^{-1}$) and phosphite $40%\;P_2O_5+20%\;K_2O$;$40%\;P_2O_5+10%\;Zn$) in anthracnose control and the effect on fruit quality [fresh weight loss (FWL-%); pH, total soluble solids ($TSS-^{\circ}Brix$), and titratable acidity (TA = % citric acid (CA)] of passion fruit ( Passiflora edulis f. flavicarpa ) at the postharvest stage. When the fruits were in the stage of 0% dehydration and fully yellow peels, they were disinfested and inoculated with Colletotrichum gloeosporioides. They were then subjected to the above mentioned treatments; this was followed by incubation for 120 h. The diameter of the disease lesions was monitored daily. After the incubation, a physico-chemical analysis was performed. Hot-water treatment resulted in disease reduction at 47 and $49^{\circ}C$ for 4 and 5 min. The combination of hot-water treatment at $47^{\circ}C$ (4 or 5 min) and application of the phosphite of K or Zn significantly reduced disease severity in fruits. The 1-MCP treatment reduced anthracnose severity in passion fruit mainly at $200nL\;L^{-1}{\cdot} 24h^{-1} $. None of the treatments significantly changed the physico-chemical characteristics of the fruit [FWL (2.6-4.1%); pH (3.2-3.5), TSS ($8.9-10.9^{\circ}Brix$), and TA (1.8-2.5% CA)].

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.575-580
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• 2000

Diamond thin films were deposited on $Si_3N_4$, SiC, TiC and $Al_2O_3$, substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower $CH_4$ concentration than 5%$CH_4$ for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10%$CH_4$. The diamond film of about $12\mu\textrm{m}$ thickness on WC substrate partly peeled off, but the film on $Si_3N_4$ substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• Corrosion Science and Technology
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• v.5 no.2
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• pp.45-51
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• 2006

Properties of the anode for cathodic protection need low overvoltage for oxygen evolution and high corrosion resistance. It is well known that DSA (Dimensionally Stable Anode) has been the best anode ever since. DSA is mainly composed of $RuO_2$, $IrO_2$, $ZrO_2$, $Co_2O_3$, and also $Ta_2O_5$, $TiO_2$, $MnO_2$ are added to DSA for better corrosion resistance. The lifetime of DSA for cathodic protection is also one of the very important factors. $RuO_2$, $IrO_2$, $RhO_2$, $ZrO_2$ are well used for life extension, and many researches are focused on life extension by lowering oxygen evolution potential and minimizing dissolution of oxide coatings. This work aims to evaluate the influence of constituents of MMO and coating cycles and $ZrO_2$ coating on the electrochemical properties and lifetime of DSA electrodes. From the results of lifetime assessment in the anodes coated with single component, $RuO_2$ coating was more effective and showed longer lifetime than $IrO_2$ coating. Also, an increased coating cycle and an electrochemically coated $ZrO_2$ could enhance the lifetime of a DSA.

• Korean Journal of Materials Research
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• v.6 no.9
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• pp.931-936
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• 1996

비휘발성 메모리 소자에의 적용을 위한 SrBi2Ta2O9(SBT)박막이 고순도의 Sr, Bi, Ti 금속타겟을 사용하여 Pt/Ti/SiO2/Si 기판 위에 reactive sputtering 법에 의해 증착되었다. 조성의 영향을 평가하기 위하여 Bi 타겟에 인가되는 전원의 변화와 열처리에 따른 C-F(capacitance-frequency), P-E(polarization-electric field), I-V(current-voltage)등의 전기적 특성이 조사되었다. Bi의 양이 증가함에 따라 Bi layer 구조를 나타내는 (105)회절 피크가 증가하였고 $700^{\circ}C$, 산소분위기에서 1시간 동안 열처리후 Sr과 Bi가 심하게 휘발되었으며 박막의 미세구조는 다공질이 되었다. 이러한 이유로 열처리된 박막의 누설 전류 밀도는 증가하였다. 열처리된 시편의 조성은 거의 화학양론비를 이루었으며 4.5$\mu$C/$\textrm{cm}^2$의 Pr값을 갖는 강유전(ferroelectric)특성을 나타내었다.

• Archives of Metallurgy and Materials
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• v.66 no.4
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• pp.935-939
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• 2021

In this study, high-purity tantalum metal powder was manufactured via self-propagating high-temperature synthesis. During the process, Ta₂O₅ and Mg were used as the raw material powder and the reducing agent, respectively, and given that combustion rate and reaction temperature are important factors that influence the success of this process, these factors were controlled by adding an excessive mass of the reducing agent (Mg) i.e., above the chemical equivalent, rather than by using a separate diluent. It was confirmed that Ta metal powder manufactured after the process was ultimately manufactured 99.98% high purity Ta metal powder with 0.5 ㎛ particle size. Thus, it was observed that adding the reducing reagent in excess favored the manufacture of high-purity Ta powder that can be applied in capacitors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.99.2-99
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• 2003