• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.28-32
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• 2005

The optical properties and intrinsic stress of $Ta_{2}O_{5}$ thin films deposited by Dual ion-Beam Sputtering: (DIBS) and Single ion-Beam Sputtering (SIBS) were studied as a function of the substrate temperature and assist ion beam voltage. The refractive index showed the maximum value (n = 2.144) at $150^{circ}C$ in the SIBS process. When the substrate temperature has above $150^{circ}C$ in the SIBS process the refractive index decreased. In the DIBS process, the increase of the substrate temperature affected the increase of the refractive index at a maximum value (n = 2.1117, at $200^{circ}C$). The low temperature process $(<100^{circ}C)$ can greatly reduce residual stress with the assist ion gun, but the high temperature process was unaffected. As the assist ion beam voltage increase from 250 to 350 V the refractive index increased to 2.185. However, the refractive index was decreased at the range of 350-650 V, As the assist ion beam voltage increased, the stress of the deposited film decreased to 0.1834 GPa at 650 V.

• Environmental Mutagens and Carcinogens
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• v.22 no.2
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• pp.106-111
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• 2002

AG6O, the complex of acriflavine and guanosine, has been shown to possess the synergistic antitumorigenic activity in the previous paper (J. Pharm. Pharmacol. 1997, 49:216). In this study, we have investigated the genotoxic properties of AG60 using in vitro and in vivo system such as Ames bacterial reversion test, chromosomal aberration assay and micronucleus assay. In Ames reverse mutation test, AG60 treatment at the dose range up to 250 $\mu\textrm{g}$/plate caused the dose-independent random induction of the mutagenic colony formation in S. typhimurium TA98, TA100, TA1537, and E. coli WP2uvrA, while any mutagenic effect of AG60 wasn't observed in S. typhimurium TA1535. Any significant chromosomal aberration wasn't observed in chinese hamster lung (CHL) fibroblast cells incubated with PBS or AG60 at the concentrations of 2.5, 5, 10 $\mu\textrm{g}$/$m\ell$ for 24 hours without but even with 59 metabolic activation system for 6 hours. In vivo ICR mice, the intramuscular injection of AG60 at the doses of 7.15, 14.3, and 28.6 mg/kg did not induce the frequency of micronucleus formation. However, mitomycin C, as one of the positive controls at the dose of 2 mg/kg caused the 8.4% induction in the frequency of micronucleus and 24% increase in the chromosomal aberration.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.87-95
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• 1992

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.41-42
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.38-38
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• 1992

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.96-97
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• 1993

• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.85-86
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.191-191
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• 2007

유효 산화막 두께가 약 2.0nm 정도의 $ZrO_2$ 절연막 위에 Ta-Mo 금속 합금과 Ru-Zr 금속 합금을 Co-sputtering 방법을 이용하여 여러 가지 일함수를 갖는 MOS capacitor를 제작하여 전기적 재료적 특성에 관하여 연구를 하였다. 그 결과 각각의 금속 합금 게이트는 4.1eV 에서 5.1eV 사이의 다양한 일함수를 나타냈으며, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$ RTA 후의 C-V특성 곡선 및 I-V 측정을 통하여 누설전류를 확인하였다. 그 결과 Ta-Mo 금속 합금의 경우 스퍼터링 파워가 100W/70W에서 NMOS에 적합한 일함수를 가졌으며, Ru-Zr 금속 합금의 경우 스퍼터링 파워가 50W/100W에서 NMOS에 적합한 일함수를 가졌다. 열처리 후의 C-V특성 곡선에서도 정전용랑 값이 거의 변하지 않았으며 평탄 전압의 변화도 거의 없었다. 누설전류 특성에서는 물리적 두께가 비슷한 기존의 $SiO_2$ 절연막에서 실험결과와 비교하여 약 100배 정도 감소되었음을 알 수 있었다. 또한 기존의 실험들에서 나타난 열처리 후의 $ZrO_2$ 절연막과 Si 기판 사이의 Interfacial layer 의 동반 두께 증가로 인한 전기적 특성 저하가 나타나지 않는 줄은 특성을 보여준다.

• Korean journal of food and cookery science
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• v.27 no.4
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• pp.17-26
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• 2011

This study was performed to analyze the antibacterial activity against food hazardous microorganisms and antimutagenic effects of Sanguisorba officinalis L. ethanol extracts on Salmonella Typhimurium TA100. The antibacterial activity was evaluated by paper disc diffusion assay, minimum inhibition concentration (MIC), and optical density of the culture with the ethanol extract for 24 hr. Antibacterial activity was tested with seven microorganisms including Escherichia coli, Escherichia coli O157:H7, Pseudomonas aeruginosa, Salmonella Typhimurium, Listeria monocytogenes, Bacillus cereus, and Staphylococcus aureus. The paper disc diffusion assay showed distinct clear inhibition zones around the discs treated with the extract for five microorganisms, except Escherichia coli and Escherichia coli O157:H7. MIC values were 0.625-2.5 mg/mL for these five strains that showed clear zones. The time-kill assay was consistent with the results from the paper disc diffusion assay and MIC test. Additionally, antimutagenicity of the extract was determined using the Ames test. The ethanol extract at 5 mg/plate inhibited 72.42% and 89.85% of mutagenicity induced by 4-nitroquinoline 1-oxide and sodium azide, respectively. These results demonstrate that the ethanol extract from S. officinalis L. has remarkable antibacterial activity and antimutagenicity.