• Korean Journal of Materials Research
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• v.33 no.8
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• pp.330-336
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• 2023

The effects of Ni²⁺ substitution for Mg²⁺-sites on the microwave dielectric properties of (Mg_1-xNi_x)(Ti_0.95(Mg_1/3Ta_2/3)_0.05)O₃ (0.01 ≤ x ≤ 0.05) (MNTMT) ceramics were investigated. MNTMT ceramics were prepared by conventional solid-state reaction. When the MgO / TiO₂ ratio was changed from 1.00 to 1.02, MgTi₂O₅ was detected as a secondary phase along with the MgTiO₃ main phase in the MNTMT specimens sintered at 1,400 ℃ for 4h. For the MNTMT specimens with MgO / TiO₂ = 1.07 sintered at 1,400 ℃ for 4h, a single phase of MgTiO₃ with an ilmenite structure was obtained from the entire range of compositions. The relative density of all the specimens sintered at 1,400 ℃ for 4h was higher than 95 %. The quality factor (Qf) of the sintered specimens depended strongly on the degree of covalency of the specimens, and the sintered specimens with x = 0.01 showed the maximum Qf value of 489,400 GHz. The dielectric constant (K) decreased with increasing Ni²⁺ content because Ni²⁺ had a lower dielectric polarizability (1.23ų) than Mg²⁺ (1.32ų). As Ni²⁺ content increased, the temperature coefficient of resonant frequency (TCF) improved, from -55.56 to -21.85 ppm/℃, due to the increase in tolerance factor (t) and the lower dielectric constant (K).

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.13-18
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• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.35-41
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• 2000

The frequency dependence of the pyroelectric characteristics of $LiTaO_3$ have been investigated by using the dynamic method. In the frequency range between 2 and 1000 Hz, they are measured in both the regimes of pyroelectric current ($R_L=1M{\Omega}$) and pyrelectric voltage ($R_L=17.3G{\Omega}$), which can be selected by adjusting the value of the load resistance. Pyroelectric coefficient depending on the voltage response in the regime of pyroelectric current shows the maximum value of $1.56{\times}10^{-8}C/cm^2{\cdot}K$ at 40 Hz. The maximum values of figures of merits for the voltage response and for the detectivity are measured as $10.8{\times}10^{-11}C{\cdot}cm/J$ and $13{\times}10^{-7}C{\cdot}cm/J$, respectively. The voltage responsivity depending on the voltage response in the regime of pyroelectrci voltage shows the maximum value of 488 V/W at 2 Hz. Noise equivalent power and detectivity shows the minimum value of $3.95{\times}10^{-10}W/{\sqrt}Hz$ and maximum value of $5.6{\times}10^8cm{\cdot}{\sqrt}Hz/W$ at 40 Hz, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.219-219
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• 2003

HVOF(High Velocity Oxygen Fuel)법을 사용한 MCrAlY(M=Ni, Co, Fe)계 열차폐 코팅(thermal barrier coating)은 열기관 내부의 극심한 환경 부하에 대해 구조물 표면에 열적, 화학적 장벽을 형성함으로써 구조물의 내구성을 향상시킨다 이와 동시에 열차폐 효과는 구조물의 온도상승 없이 내부 가동 온도를 높일 수 있게 함으로써 열효율을 상승시키고 연료 효율을 높여 가동비용 절감을 이룰 수 있는 동시에 고 연소를 통한 오염원의 배출을 감소시킬 수 있다. 본 연구에서는 $H_2O$$_2$=5:1 분위기 하에서 HVOF법을 사용하여 Hastelloy-X 기판위에 125$\mu\textrm{m}$의 두께로 다음 5종류의 (Ni, Co, Cr)계 MCrAlY 코팅을 용사시켰다. 준비된 (Ni, Co)-Cr-Al-(Y, Ta, Re), (Ni, Co)-Cr-Al-(Y, Re), (Ni, Co)-Cr-Al-(Y, Ta), (Ni, Co)-Cr-Al-Y, (Ni,Co)-Cr-Al-Ir 코팅시편에 대한 산화성질을 조사하기 위해 대기 중 1000, 1100, 120$0^{\circ}C$에서 50, 100, 150, 200시간 등온실험(Isothermal oxidation)을 실시하였고, XRD, SEM/EDS, EPMA를 이용하여 생성된 산화막과 코팅 시편의 조직 변화를 조사하였다. 산화온도와 산화시간이 증가할수록 산화막의 박리가 많이 발생하였으며, 분석 결과 미세하게 분포된 a-Al$_2$O$_3$ 입자, NiCr$_2$O$_4$스피넬 상, 미세한 Cr$_2$O$_3$가 관찰되었고, 코팅 조성 변화에 따라 형성되는 이들 산화물의 존재비가 달라졌으며, 산화온도가 높아질수록 산화속도가 가속화되었다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.136-140
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.447-447
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• 2012

최근 생물전자공학에서 의료 산업 환경 등 많은 분야에 응용 가능한 바이오센서의 연구가 활발해지고 있다. 그 중 의료 분야에서, 수소이온 ($H^+$)의 농도 감지는 인간의 질병을 예측하는데 중요한 지표가 되며 이러한 수소이온 ($H^+$) 농도의 변화를 실시간으로 감지하기 위해 반도체를 기반으로 한 다양한 pH 센서가 제안되었다. Ion sensitive field effect transistor (ISFET), electrolyte-insulator-semiconductor (EIS)는 대표적인 반도체 pH센서로, 작은 소자 크기, 견고한 구조, 빠른 응답속도와 CMOS 공정과의 호환성이 좋다는 장점이 있다. 특히, EIS는 제조공정이 간단하고 감지막의 감지 특성 평가가 용이하기 때문에 지속적으로 연구되고 있는 pH 센서이다. 센서의 감지 특성을 평가함에 있어 감지막의 감지감도와 안정성이 우수해야 하며 이를 위해 high-k 물질이 감지막으로 사용되고 있다. 추가적으로 high-k 물질은 기존의 $SiO_2$와 $Si_3N_4$를 대신하여 높은 유전상수로 인한 고성능, 고감도 센서제작을 가능케 한다. 본 연구에서는, high-k 물질인 $HfO_2$, $Ta_2O_5$, $ZrO_2$, $Al_2O_3$를 각각 $SiO_2$ 완충막에 적층한 이단 감지막을 제작하였고, 그 특성을 기존의 $SiO_2$, $Si_3N_4$ 감지막의 감지특성과 비교하였다. pH 감지 특성을 평가해 본 결과, 기존의 $SiO_2$, $Si_3N_4$ 감지막과 비교했을 때 high-k 물질의 감지막을 갖는 EIS pH 센서에서 감지감도와 안정성 모두 우수하게 나타났다. 특히, high-k 물질 중 $HfO_2$에서 감지감도가 다소 크게 평가되었으나, 화학적 용액에 대한 안정성은 떨어졌다. 반면에 $Al_2O_3$과 $Ta_2O_5$은 화학용액에 대한 안정성 측면에서 최적의 특성을 보임을 확인하였다. 결론적으로, high-k 물질에 대한 전반적인 평가를 통하여 높은 pH 감지감도뿐만 아니라 우수한 안정성의 EIS pH 센서를 제작 할 수 있었다.

• Journal of Korean Society on Water Environment
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• v.33 no.1
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• pp.34-39
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• 2017

Under a corrosive environment, electrodes that are applied in the water-treatment system need not only very high electrochemical activity for fast reactions, but also high durability for cost saving. Therefore, the fabrication condition of iridium electrodes was examined to produce a more durable iridium electrode in this study. Tantalum was selected as a binder to enhance the durability of the iridium electrode. Investigation of the weight ratio between the catalyst and the binder to improve electrochemical activity was performed. Also, to compare the effect of the different coating amounts of the catalyst, the results of CV (Cyclic Voltammetry) and EIS (Electrochemical Impedance Spectroscopy) were discussed. Furthermore, an ALT(Accelerated Lifetime Test) was designed and applied to the electrodes to determine the conditions for highly durable electrode fabrication.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1719-1723
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• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• Journal of Surface Science and Engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.43-46
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• 2002

Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.