• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.75-78
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• 1996

The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying $N_2$/Ar mixture gas and substrate temperature. After finding The deposition condition of TiN films, The samples with the structure of Cu/Ta$_2$O$_{5}$, TiN/Ta$_2$O$_{5}$Si, Cu/TiN/Ta$_2$O$_{5}$ Si were prepared and were measured I-V, C-V. As a results, it was found that when TiN was deposited in an $N_2$a results, it was found that when TiN was deposited in an $N_2$atmosphere its Sheet resistance is lower n than n V$_2$Ar mixtureixture

• 한국진공학회지
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• 제8권3A호
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• pp.224-230
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• 1999

$SrBi_{2x}Ta_2O_9$ (SBT) thin films were prepared on platinized silicon substrates by MOD process, and their ferroelectric and leakage current characteristics were investigated. The grain size of the MOD derived SBT films increased with increasing the BI/Ta mole ration. Although the SBT films with x of 0.8~1.2 were composed of the equiaxed grains, the elongated grains were also observed for the SBT films with x of 1.4 and 1.6. The SBT film with x of 1.2 exhibited the optimum ferroelectric properties of 2PR : 9.79 $\muC/\textrm{cm}^2$ and Ec : 24.2kV/cm at applied voltage of 5V. The leakage current density of the SBT films increased with increasing the BI/Ta mole ratio. With post annealing process, 2Pr and $E_c$of the SBT film with x of 1.2 increases 11.3 $\muC/\textrm{cm}^2$ and 39.6kV/cm, respectively. decrement of the leakage current density by post annealing process increased remarkably with increasing the Bi/ta mole ratio, and the SBT film with x=1.6 exhibited the lowest leakage current density after post annealing process.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.64-67
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• 2011

The effect of Ta substitution on the crystal structure, ferroelectric, and piezoelectric properties of $Bi_{0.5}(Na_{0.82}K_{0.18})_{0.5}Ti_{1-x}Ta_xO_3$ ceramics has been investigated. The Ta doping resulted in a transition from coexistence of ferroelectric tetragonal and rhombohedral phases to an electrostrictive pseudocubic phase, leading to degradations of the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electricfield-induced strain was significantly enhanced by the Ta substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 566 pm/V under an applied electric field 6 kV/mm when 2% Ta was substituted on Ti sites. The abnormal enhancement in strain was attributed to the pseudocubic phase with high electrostrictive constants.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1995년도 추계학술발표회논문집(2)
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• pp.668-673
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• 1995

$UO_2$-CeO$_2$ 모의혼합분말에 첨가제를 미량 첨가하여 소결체의 미세구조 변화를 $UO_2$분말의 경우와 비교, 관찰하였다. 소결 첨가제로서 Ta, Ti 및 Nb를 사용하였으며, 이들을 미세한 산화물의 형태로 $UO_2$ 및 $UO_2$-CeO$_2$에 첨가하여 환원성 및 산화성 분위기에서 각각 소결하였다. Ta, Ti 및 Nb는 환원소결에서 $UO_2$의 결정립을 성장시켰으나 산화소결에서는 첨가효과가 크게 나타나지 않았다. $UO_2$-0.lw%TiO$_2$와 $UO_2$-0.6w%Ta$_2$O$_{5}$의 환원소결체에서 eutectic phase가 관찰되었으나 산화소결체에서는 나타나지 않았다. $UO_2$-4wt%CeO$_2$의 환원소결에서는 Ti만이 결정립성장에 기여하는 것으로 나타났으며 Ta, Nb와 같이 $UO_2$에 치환형으로 고유되는 원소는 Ce 이온과 Cluster를 형성함으로 결정립성장에 거의 기여하지 못하고, Ti와 같이 UO2$_2$ 침입형으로 고용되는 원소는 일부가 인접한 Ce$_{U}$' 이온과 cluster를 형성하더라도 나머지가 V$_{U}$'의 형성에 기여하므로서 결정립을 성장시킬 수 있다.

• 상하수도학회지
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• 제32권4호
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• pp.349-355
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• 2018

This study interrogated multi-layer heterojunction anodes were interrogated for potential applications to water treatment. The multi-layer anodes with outer layers of $SnO_2/Bi_2O_3$ and/or $TiO_2/Bi_2O_3$ onto $IrO_2/Ta_2O_5$ electrodes were prepared by thermal decomposition and characterized in terms of reactive chlorine species (RCS) generation in 50 mM NaCl solutions. The $IrO_2/Ta_2O_5$ layer on Ti substrate (Anode 1) primarily served as an electron shuttle. The current efficiency (CE) and energy efficiency (EE) for RCS generation were significantly enhanced by the further coating of $SnO_2/Bi_2O_3$ (Anode 2) and $TiO_2/Bi_2O_3$ (Anode 3) layers onto the Anode 1, despite moderate losses in electrical conductivity and active surface area. The CE of the Anode 3 was found to show the highest RCS generation rate, whereas the multi-junction architecture (Anode 4, sequential coating of $IrO_2/Ta_2O_5$, $SnO_2/Bi_2O_3$, and $TiO_2/Bi_2O_3$) showed marginal improvement. The microscopic observations indicated that the outer $TiO_2/Bi_2O_3$ could form a crack-free layer by an incorporation of anatase $TiO_2$ particles, potentially increasing the service life of the anode. The results of this study are expected to broaden the usage of dimensionally stable anodes in water treatment with an enhanced RCS generation and lifetime.

• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1615-1617
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• 2004

5 mol% $BaWO_4$를 첨가시켜 합성한 Ba$(Mg_{1/3}Ta_{2/3})O_3$를 이용하여 비방사유전세선로에 삽입되는 세라믹스 공진기를 제자하고 기존의 $MgTiO_3-CaTiO_3$계 세라믹스 공진기와 공진특성을 비교하여 그 특성을 고찰하였다. 그 결과 BMT 세라믹스는 기존의 $MgTiO_3-CaTiO_3$계 세라믹스보다 품질계수가 2배 이상 크게 높게 측정되었고, 측정 사진의 관찰 결과 전파차단성도 우수할 것으로 예상되기 때문에 BMT가 비방사유 전체선로에 삽입되는 유전체 공진기 재료로서 적용될 경우 우수한 공진특성을 발휘할 것으로 판단된다.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.197-201
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• 2001

The microwave dielectric properties of (1-x)Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3)O$_3$(x=0.25~0.5) ceramics depending on the Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BCN] contents and the possibility of application as a microwave dielectric resonator were investigated. The specimens were prepared by he conventional mixed oxide method using there sintering temperature of 1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As the mole fraction of BCN increased, dielectric constant increased while temperature coefficient of resonant frequency decreased. The highest value of quality factor, Qxf$_{0}$=138,205GHz, obtained in the sample of 0.9BMT-0.1BCN ceramics. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Qxf$_{0}$=75,325GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.EX>.

• 한국자기학회지
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• 제15권4호
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• pp.226-230
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• 2005

본 연구에서는 스핀밸브 구조에서 하지층으로 많이 사용되고 있는 Ta 층에 질소를 첨가하여 질소량에 따른 자기적 특성과 열처리 결과를 비교 검토하였다. 또한 하지층에 질소를 첨가하여 확산 방지막으로서 역할과 기판과 하지층과의 접착력을 측정하여 비교하였다. 사용된 스핀밸브는 Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta 구조이다. Ta 박막에 비해 TaN 박막의 질소량이 증가할수록 증착률은 감소하였고, 비저항과 표면 거칠기는 증가하였다. 고온에서 열처리 후 측정한 XRD 결과를 보면 Si/Ta 박막에서는 규소화합물이 생성된 반면 Si/TaN 박막에서는 규소화합물을 발견할 수 없었다. 자기저항비(MR)와 교환결합자장($H_{ex}$)은 질소량이 4.0 sccm 이상에서는 감소하였다. 열처리 결과 자기저항비는 하지층이 Ta인 시편과 질소량이 4.0 sccm까지 혼합된 TaN 시편은 $200^{\circ}C$까지는 약 $0.5\%$ 정도 증가하다가 감소하였다. 기판과 하지층과의 접착력을 측정한 결과 Ta 박막보다 질소량이 8.0 sccm인 TaN 박막인 경우 약 2배 강한 접착력을 보였다. 본 연구 결과에 의하면 하지층 증착 시 아르곤 가스에 3.0 sccm 정도의 질소 가스를 혼합하여 사용하면 자기적 특성에 크게 영향을 주지 않으면서 확산 방지막, 접착력 향상등의 이점을 얻을 수 있으리라 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.129-132
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• 1992

Rutile was among the first dielectric materials used. However, rutile exhibits a very high temperature coefficient of capacitance (about -750[ppm/$^{\circ}C$]) which resticts its practical application. Since this first use of titania, other materials have also been studied with the object of decreasing the temperature dependence whilst retaining favorable dielectric loss, Q, and relative permittivity. The temperature coefficient of temperature compensation capacitor is +100~750[ppm/$^{\circ}C$], dielectric constant 10~150. Low loss ceramics with dielectric constants in the 10～150 range also found application. Recently, their applications are extended in EMI filter and dielectric materials for microwave. There temperature coefficient of dielectric materials approaches 0[ppm/$^{\circ}C$]. The dielectric preperties of zirconia titanate ceramics prepared by addition of $Ta_2O_{5}$ were investigated.