• Title/Summary/Keyword: ${Ta_2}{O_5}$

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X-Ray Spectrometric Determination of $Ta_2O_5,\;Nb_2O_5$ and $ZrO_2$in Tin-Slag Samples by Double Dilution Technique (주석-슬랙중 $Ta_2O_5,\;Nb_2O_5$$ZrO_2$의 이중희석법을 이용한 X-선 분광분석)

  • Young-Sang Kim;Kee-Chae Park
    • Journal of the Korean Chemical Society
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    • v.28 no.5
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    • pp.302-308
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    • 1984
  • X-ray spectrometric determination of $Ta_2O_54, $Nb_2O_5$ and $ZrO_2$ in tin-slag samples using the double dilution technique was conducted. Tin-slag samples and one synthesized standard sample having similar composition to the samples were diluted with anhydrous $Li_2B_4O_7$ at the level of 1.00, 2.00 and 3.00% of the sample content, respectively. The diluted samples were fused at $1,150^{\circ}C$ for 30 minutes, and these glass beads were finely ground and pelletized. With the X-ray intensities measured, analytical results were calculated by the double dilution equation. The results agreed to the reference values obtained by the standard calibration method and the simple dilution technique within allowable error range and were reproducible.

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The Effect of Ta-substitution on the Bi-O Bonding and the Electrical Properties of $Bi_4$$Ti_3$$O_{12}$ Thin Films ($Bi_4$$Ti_3$$O_{12}$ 박막에서 Bi-O 결합과 전기 물성에 대한 Ta 치환의 영향)

  • 고태경;한규석;윤영섭
    • Journal of the Korean Ceramic Society
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    • v.38 no.6
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    • pp.558-567
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    • 2001
  • 본 연구에서는 알콕사이드를 전구물질로 하는 졸겔공정을 이용하여 Bi 과잉 12 mol%의 조성인 B $i_4$ $Ti_3$ $O_{12}$ 박막과 B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$(x=0.1, 0.2, 0.3) 박막을 제조하였다. XPS 분석에 따르면 Ta 치환 x=0.2에서 Bi 4f의 photoemission 곡선이 낮은 결합에너지로 이동하였고 피크 강도가 감소하는 현상이 관측되었다. 이는 x=0.1과 0.2 사이에서 Bi-O 결합이 길어져 인장상태 하에 있었음을 나타내었다. B $i_4$ $Ti_3$ $O_{12}$(BIT) 박막의 유전상수와 유전손실은 100 kHz에서 340, 0.05이었고, B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$ 박막에서 이들 값은 x=0.1에서 가장 높았으며, 각각 480, 0.13이었다. B $i_4$ $Ti_3$ $O_{12}$ 박막의 잔류분극과 항전계는 1.24$\mu$C/$ extrm{cm}^2$, 31.4 kV/cm 이었으나, Ta 치환 x=0.2에서 이들 값은 각각 19.7$\mu$C/$\textrm{cm}^2$, 49.5 kV/cm 에 이르렀다. 또한, B $i_4$ $Ti_3$ $O_{12}$ 박막의 누설전류 밀도는 ~$10^{-6}$ A/$\textrm{cm}^2$ 정도이었으며, Ta 치환은 누설전류를 감소시켜 Ta 치환 x=0.2 이상에서 BIT 박막에 비해 한 차수 정도 낮아졌다. Ta 치환에 따른 B $i_4$ $Ti_3$ $O_{12}$ 전기 물성에서 변화는 Bi-O 결합에서 관측된 인장상태로의 전이와 연관성이 있었으며, 덧붙여 치환에서 생성된 전자에 의한 정공보상이 이에 영향을 끼쳤다. 정공보상이 이에 영향을 끼쳤다.끼쳤다.

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Piezoelectric and Dielectric Properties of (Na,K,Li)(Nb,Sb,Ta)O3 Ceramics as a Function of Fe2O3 Addition (Fe2O3첨가에 따른 (Na,K,Li)(Nb,Sb,Ta)O3계 세라믹스의 압전 및 유전 특성)

  • Lee, Gwang-Min;Shin, Sang-Hoon;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.9
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    • pp.555-560
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    • 2014
  • In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

A Study on the Comparing the Structure of Bulks with Thin Films of Amorphous Ta-IPA using XRD (X-선 회절을 이용한 비정질 Ta-IPA 괴상과 박막의 구조 비교에 관한 연구)

  • Yoon, Dai-Hyun;Kim, Hwa-Min
    • Journal of the Korean Chemical Society
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    • v.35 no.6
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    • pp.653-658
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    • 1991
  • The structural variation process and relation of water of amorphous Ta-IPA bulk and thin film upon heat-treatment conditions of $25^{\circ}C$ and $340^{\circ}C$ have been studied by using the radial distribution functions$ (RDF_{obs})$ estimated from the X-ray diffraction intensities, TG-DTA and Infrared spectrophotometer. The expected Ta-IPA structure was determined by comparing the $ RDF_{obs}$ with that for $RDF_{calc}$. The structure of specimens prepared by sol-gel method is basically based on the L-$Ta_2O_5$ crystal. Thin film of samples are mainly composed of octahedral Ta$O_6$and have smaller cluster than bulk samples.

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A Study on Microstructure and Mechanical Properties of Hf, Ta Added Ti-l5Sn-4Nb system Alloys for Biomaterial (Hf, Ta가 첨가된 Ti-l5Sn-4Nb계 생체용 합금의 미세조직 및 기계적 성질에 관한 연구)

  • 김대환;이경구;박효병;이도재
    • Journal of the Korean institute of surface engineering
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    • v.33 no.4
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    • pp.251-260
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    • 2000
  • Ta and Hf added Ti-l5Sn-4Nb alloys without V and Al elements for biomaterial were melted by arc furnace in response to recent concerns about the long term safety of Ti-6Al-4V alloy. All specimens were homogenized at $1000^{\circ}C$ and solution treatment was performed at $812^{\circ}C$ and aging treatment at $500^{\circ}C$. The microstructure and mechanical properties were analysed by optical micrograph, hardness tester and instron. Ti-l5Sn-4Nb system alloys showed widmanstatten microstructure which is typical microstructure in $\alpha$$\beta$ type Ti alloys. The Ti-l5Sn-4Nb-2Hf and Ti-l5Sn-4Nb-2Ta alloys showed better hardness and tensile strength compared with Ti-6Al-4V. The result of XPS analysis, Ti-l5Sn-4Nb alloy in air atmosphere consisted of $TiO_2$, SnO and NbO.

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The Effect of the Oxygen Flow Rate on the Electronic Properties and the Local Structure of Amorphous Tantalum Oxide Thin Films

  • Denny, Yus Rama;Lee, Sunyoung;Lee, Kangil;Kang, Hee Jae;Yang, Dong-Seok;Heo, Sung;Chung, Jae Gwan;Lee, Jae Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.398-398
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    • 2013
  • The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet $Ta4f_{7/2}$ and $Ta4f_{5/2}$ with splitting of 1.9 eV. The oxygen flow rate of the film results in the appearance of new features in the Ta4f at binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV, these peaks attribute to $Ta^{1+}$, $Ta^{2+}$, $Ta^{4+}$/$Ta^{2+}$, and $Ta^{5+}$, respectively. Thus, the presence of non-stoichiometric state from tantalum oxide ($TaO_x$) thin films could be generated by the oxygen vacancies. The REELS spectra suggest the decrease of band gap for tantalum oxide thin films with increasing the oxygen flow rate. The absorption coefficient ${\mu}$ and its fine structure were extracted from the fluorescence mode of extended X-ray absorption fine structure (EXAFS) spectra. In addition, bond distances (r), coordination numbers (N) and Debye-Waller factors (${\sigma}^2$) each film were determined by a detailed of EXAFS data analysis. EXAFS spectrapresent both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the increase of oxygen flow rate.

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