• Journal of the Microelectronics and Packaging Society
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• v.2 no.2
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• pp.31-40
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• 1995

Donor dopant로 WO3, Ta2O5 및 Nb2O5를 첨가한 Zr0.8Sn0.2TiO4 세라믹스의 유전상수 $\varepsilon$r 품 질계수 Q 및 공진주파수의 온도계수 rf에 대하여 연구하였다. 139$0^{\circ}C$에서 32시간 소결시 donor dopant 첨가량에 따른 ZST의 유전상수는 소결밀도의 변화 거동과 잘 일치하였다. 5.5 GHz에서 측정 한 ZST의 품질계수 Q는 ~0.5 mol% WO3 Ta2O5 및 Nb2O5 첨가에 의해 6800에서 8500 정도로 증가 하였다. ZST의 $\tau$f는 0.3 mol%까지의 WO3 첨가량 증가에 따라 0 ppm/$^{\circ}C$에서 -4.6 ppm/$^{\circ}C$까지 음 의 값으로 직선적으로 감소하였으며 0.4 mol% 범위의 Ta2O5 및 Nb2O5 첨가에 의해 -7 ppm/$^{\circ}C$ 까지 직선적으로 감소하였다.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.81-86
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• 2003

Microwave dielectric properties have been investigated in the$(1-x)CaTiO_3-xYAlO_3$ (x=0.1~1.0) solid solution system. The mixtures of $CaTiO_3$ and $YalO_3$using solid state method were sintered at various temperatures. Their dielectric constants and related temperature coefficients were strongly depend on the composition of the solid solution. The optimum properties were recorded as for ${\varepsilon}_r=47,$ $Q{\times}f_0$=35000 and ${\tau}_f=+11ppm/^{\circ}C$ without sintering agent. Even at $1200^{\circ}C$ full densification has been achieved with addition of $CaB_2O_4$ in the $0.75CaTiO_3-0.25YalO_3$ composition. The sample of $0.3 wt%-CaB_2O_4$ added $ 0.75CaTiO_3-0.25YalO_3$ sintered at $1300^{\circ}C$ for 3 h showed optimum microwave dielectric properties of ${\varepsilon}_r=47$, $Q{\time}f_0=37000$ and ${\tau}_f=+17ppm/^{\circ}C$, which demonstrates the promising candidates for microwave dielectric materials covering 5~7 GHz range.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.201-205
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• 2007

Low temperature sintering behavior and microwave dielectric properties of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}zinc$ borosilicate glass(ZBS) systems were investigated with a view to applying the composition to LTCC technology. The addition of $10{\sim}30$ wt% ZBS in both systems ensured successful sintering below $900^{\circ}C$. For the $BiNbO_{4^-}ZBS$ system, the sintering was completed when 15 wt% ZBS was added whereas 25 wt% ZBS was necessary for the $ZnNb_2O_{6^-}zinc$ system. Secondary phase was not observed in the $BiNbO_{4^-}ZBS$ system but a small amount of $ZnNb_2O_6$ with the willemite structure as the secondary phase was observed in the $ZnNb_2O_{6^-}ZBS$ system. In terms of dielectric properties, the application of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}ZBS$ systems sintered at $900^{\circ}C$ to LTCC were shown to be appropriate; $BiNbO_{4^-}15$ wt% ZBS($\varepsilon_r=25,\;Q{\times}f\;value=3,700GHz,\;\tau_f=-32ppm/^{\circ}C$) and $ZnNb_2O_{6^-}25$ wt% ZBS($\varepsilon_r=15.8,\;Q{\times}f\;value=5,400GHz,\;\tau_f=-98ppm/^{\circ}C$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.30-36
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• 2002

The effects of the sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of ZnTi $O_3$ system were investigated. Highly dense samples were obtained for ZnTi $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of <1 wt.%, respectively. The microwave dielectric properties of ZnTi $O_3$ with 0.6 wt.% B $i_2$ $O_3$ and 0.5 wt.% $V_2$ $O_{5}$ were as follows: Qx $f_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$= 22, and $\tau$$_{f}$ = -43 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the abode system. The optimum amount of Ti $O_2$was 15 mol.% when sintered at 87$0^{\circ}C$, at which Ive could obtain following results: Qx $f_{O}$ = 44,700GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 PPm/$^{\circ}C$.>.EX>.>.>.EX>.>.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.677-680
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• 2003

The effect of $B_2O_3$ addition on the sintering behavior and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ ceramic system were investigated. Highly dense samples were obtained at the sintering temperatures below $900^{\circ}C$. Temperature coefficient of resonance frequency(${\tau}_f$) changes to a positive value with increasing the amount of $B_2O_3$ because of the increased amount of rutile phase. The $Q{\times}f_o$ values were determined by the microstructures and sintering shrinkages which are affected by the rutile or second phase. When 6.19 mol.% of $B_2O_3$ added and sintered at $900^{\circ}C$ for 5h, it exhibits ${\epsilon}_r$ =23.5, $Q{\times}f_o$= 67,500 GHz, and ${\tau}f=-1.42ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.313-314
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• 2006

$BiNbO_4$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 5~20 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability and temperature coefficient of resonant frequency(${\tau}_f$), but it decreased the dielectric constant(${\varepsilon}_r$) and quality factor($Q{\times}f_0$) significantly due to the formation of an excessive liquid. The sintered $BiNbO_4$ ceramics at $900^{\circ}C$ with 15 wt% ZBS glass demonstrated 25 in dielectric constant(${\varepsilon}_r$), 3,700 in quality factor($Q{\times}f_0$), and -32 $ppm/{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.78-85
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• 1998

The design method of a temperature stable bandpass filter using dielectric coaxial resonators of with two dielectric ceramics with opposite signs of temperature coefficient of dielectric constant (${\tau}_{\epsilon}$) to compensate for each other in this method. $MgTiO_3$(${\tau}_{\epsilon}$=+99 ppm/${\circ}C$) as a positive ${\tau}_{\epsilon}$ material and Ba($Zn_{1/3}Nb_{2/3}$)$O_3$(${\tau}_{\epsilon}$=-77ppm/${\circ}C$) as a negative material were selected. The length of a SIR for the temperature stability was calculated according to the design method and the susceptance slope parameter of the SIR was obtained. A temperature stable bandpass filter using dielectric SIR's was designed, simulated and fabricated. The center frequency of this filter was 915 MHz and the pass bandwidth was 20 MHz. Temperature properties of this bandpass filter by simulations were compared with the measured results of the bandpass filter fabricated.

• ETRI Journal
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• v.14 no.4
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• pp.217-227
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• 1992

최근 이동통신 및 위성통신 등 마이크로웨이브를 이용하는 통신분야의 시장이 급속히 신장됨에 따라 RF(Radio Frequency) 부품의 산업적 중요성이 부각되고 있다. RF 부품은 크게 능동부품과 필터로 대표되는 수동부품으로 대별되는데, duplexer나 필터는 현재 대부분 마이크로웨이브 세라믹유전체를 사용 제조하고 있다. 본 연구에서는 이들 부품들에 사용가능한 세라믹유전체를 개발하기 위한 연구의 일환으로 BaO-$Sm_2$$O_3$-$TiO_2$계 세라믹의 마이크로웨이브 유전특성과 여기에$La_2\$$O_3$를 첨가한 계인 BaO-($Sm_1$$-_X$$La_X$$)_2$$O_3$-$TiO_2$ 세라믹유전체를 제조하여 마이크로웨이브 유전특성을 살펴보았다. RF 부품에 사용되는 세라믹유전체는 높은 유전율$\varepsilon_r$높은 품질계수 (Q) 및 안정된 온도특성 $\tau_f$ 등의 조건을 충족시켜야한다. 본 연구에서는 유전체의 $\varepsilon_r$ 및 Q의 측정에 디스크형 유전체공진기와 두개의 도체평행판을 사용한 Hakki-Coleman법을 사용하였으며, $\tau_f$는 fixture를 항온조에 넣어서 측정하였다. BaO-$Sm_2O_3-TiO_2$계의 경우 소결온도 $1350^{\circ}C$까지는 $\varepsilon_r$및 Q가 증가하나 그 이상의 소결온도에서는 감소한다. 그리고 $\tau_f$는 $-35_{ppm}/^{\circ}C$에서 소결온도에는 거의 의존하지 않았다. $La_2O_3$를 첨가한BaO-($Sm_1$$-_X$$La_X$$)_2$$O_3$-$TiO_2$ 세라믹의 마이크로웨이브 유전특성은 $La_2O_3$의 첨가량이 많을수록 $\tau_f$값이 음에서 양으로 이동함이 관찰되었으며, x=0.15에서 $\tau_f$가 0이 되어 마이크로웨이브 부품용 마이크로웨이브 세라믹유전체를 얻을 수 있음이 확인되었다.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.872-876
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• 1997

(1-x)CaTi $O_{3}$-xLa(Z $n_{1}$2/ $Ti_{1}$2/) $O_{3}$의 마이크로 유전특성을 조사하였다. x가 증가함에 따라 비유전율과 공진주파수의 온도계수는 감소하였으며, Qㆍ $f_{0}$는 증가하였다. 그 결과 x=0.5인 (C $a_{0.5}$L $a_{0.5}$)( $Ti_{0.75}$Z $n_{0.25}$) $O_{3}$의 조성에서 $\varepsilon$$_{r}$=51, Qㆍ $f_{0}$=38,000 (at 7 GHz), $\tau$$_{f}$=+5ppm/$^{\circ}C$의 유전특성이 나타났다. (C $a_{0.5}$L $a_{0.5}$)( $Ti_{0.75}$Z $n_{0.25}$) $O_{3}$조성의 소결온도를 저하시키기 위하여 B $i_{2}$ $O_{3}$를 주조성으로한 소결체를 첨가하여 소결 및 유전특성을 조사하였다. 1wt% 0.76B $i_{2}$ $O_{3}$-0.24NiO가 첨가된 경우 소결온도는 15$0^{\circ}C$ 낮아졌으며, 비유전율 ($\varepsilon$$_{r}$), 공진주파수의 온도계수($\tau$$_{f}$), Qㆍ $f_{0}$가 각각 50+5ppm/$^{\circ}C$, 35,000인 마이크로파 유전특성이 얻어졌다. 또한 3wt%의 0.76B $i_{2}$ $O_{3}$-0.24NiO가 첨가된 경우 소결온도는 20$0^{\circ}C$ 저하되었고, 비유전율 ($\varepsilon$$_{r}$)과 공진주파수의 온도계수 ($\tau$$_{f}$)는 변하기 않았으나, Qㆍ $f_{0}$값이 38,000에서 25,000으로 저하되었다. 25,000으로 저하되었다.되었다.되었다.되었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.305-310
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• 2002

The microwave dielectric properties of Ba(Mg$_{1}$3/Ta$_{2}$3/O$_3$-Ba(Co$_{1}$3/Nb$_{2}$3/O$_3$[BMT-BCN] ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with the sintering temperature of 15$25^{\circ}C$~1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As increasing the mole fraction of BCN, dielectric constant increased while the temperature coefficient of resonant frequency was changed from positive to negative value. The highest value of quality factor, Q$\times$f$_{0}$=138,205GHz, obtained in the 0.9BMT-0.1BCN ceramics sintered at 1575$^{\circ}C$. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics sintered at 15$25^{\circ}C$ for 5 hours showed the microwave dielectric properties of $\varepsilon$$_{r}$=30.21, Q$\times$f$_{0}$=85,789GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.