• Journal of Microbiology and Biotechnology
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• v.10 no.5
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• pp.643-650
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• 2000

A new aniline-utilizing microorganism, strain HY1 obtained from an orchard soil, was characterized by using the BIOLOG system, an analysis of the total cellular fatty acids, and a 16S rDNA sequence. Strain HY1 was identified as a Burkholderia species, and was designated Burkholderia sp. HY1. GC and HPLC analyses revealed that Burkholderia sp. HY1 was able to degrade aniline to produce catechol, which was subsequently converted to cis,cis-muconic acid through an ortho-ring fission pathway under aerobic conditions. Strain HY1 exhibited a drastic reduction in the rate of aniline degradation when glucose was added to the aniline media. However, the addition of peptone or nitrate to the aniline media dramatically accelerated the rate of aniline degradation. A fatty acid analysis showed that strain HY1 was able to produce lipids 16:0 2OH, and 11 methyl 18:1 ${\omega}7c$ approximately 3.7-, 2.2-, and 6-fold more, respectively, when grown on aniline media than when grown on TSA. An analysison the alignment of a 1,435 bp fragment. A phylogenetic analysis of the 16S rDNA sequence based on a 1,420 bp multi-alignment sowed of the 16s rDNA sequence revealed that strain HY1 was very closely related to Burkholderia graminis with 95% similarity based that strain HY1 was placed among three major clonal types of $\beta$-Proteobacteria, including Burkholderia graminis, Burkholderia phenazinium, and Burkholderia glathei. The sequence GAT(C or G)${\b{G}}$, which is highly conserved in several locations in the 16S rDNA gene among the major clonal type strains of $\beta$-Proteobacteria, was frequently replaced with GAT(C or G)${\b{A}}$ in the 16S rDNA sequence from strain HY1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1656-1658
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• 2003

고전압 대전류 시스템에 사용하는 스위치의 기본 요구조건은 저가, 긴 수명, 적은 지터와 대용량 그리고 seal-off 형태로 쉽게 설치하여 운전하는 것이다. 본 논문은 고전압 대전류용 Seal-off TVS (Triggered Vacuum Switch)를 개발하는 것을 목적으로 하고있다. 제작한 TVS는 양전극과 음전극이 교대로 고정된 간격으로 각각 3개의 전극으로 배열되어 있으며 전극은 사다리꼴 모양으로 되어있고 트리거 시스템과 개스를 흡수하는 게터가 내부에 설치되어 있다. 제작한 스위치 내부는 약 $10^{-7}$ torr의 진공상태를 유지하고 있으며 세라믹 챔버를 사용하여 Seal-off 상태로 설계, 제작하였다. TVS의 에너지 최고 전달량은 74 C 이며 30 kV, 100 kA, $1{\sim}2$ ms의 스위치를 제작하여 시험을 하였다. 스위치 시험 장치는 200 ${\mu}F$, 22 kV 6개를 병렬로 연결한 커패시터 뱅크와 160 ${\mu}H$의 인덕터와 0.2 ${\Omega}$의 저항을 이용하여 시험 장치를 구성하였다. 본 논문은 제작한 스위치의 전기적인 특성 시험한 결과에 대하여 논하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.501-507
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• 2017

A unimorph piezoelectric cantilever generator with an interdigitated electrode (IDE) was developed for vibration energy harvester applications driven in the longitudinal mode. Hard lead zirconate titanate (PZT) ceramic with a high $Q_m$ of 1,280 was used as the piezoelectric active material. Ten PZT sheets produced by tape casting were laminated and co-fired with an Ag/Pd IDE at $1,050^{\circ}C$ for 2 h. The approximately $280{\mu}m$-thick co-fired PZT laminate with the IDE was attached to a stainless steel substrate with an adhesive epoxy for the fabrication of an IDE unimorph cantilever. Its energy harvesting characteristics were evaluated: an output power of $1.1{\mu}W$ at 120 Hz across the resistive load of $700k{\Omega}$ was obtained, corresponding to a normalized power factor of $4.1{\mu}W/(G^2{\cdot}cm^3)$.

• Journal of Microbiology and Biotechnology
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• v.17 no.5
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• pp.705-711
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• 2007

Two novel strains of the Cytophaga-Flexibacter-Bacteroides(CFB) group, designated Gsoil $219^T$ and Gsoil $238^T$, were isolated from soil of a ginseng field of Pocheon Province in Korea. Both strains were Gram-negative, aerobic, nonmotile, nonspore-forming, and rod-shaped. Phylogenetic analysis based on 16S rRNA gene sequences indicated that both isolates belong to the genus Chitinophaga but were clearly separated from established species of this genus. The sequence similarities between strain Gsoil $219^T$ and type strains of the established species and between strain Gsoil $238^T$ and type strains of the established species ranged from 91.4 to 94.7% and 91.6 to 94.2%, respectively. Phenotypic and chemotaxonomic data(major menaquinone, MK-7; major fatty acids, $iso-C_{15:0}\;and\;C_{16:1}\omega5c$; major hydroxy fatty acid, $iso-C_{17:0}3-OH$; major polyamine, homospermidine) supported the affiliation of both strains Gsoil $219^T$ and Gsoil $238^T$ to the genus Chitinophaga. Furthermore, the results of physiological and biochemical tests allowed genotypic and phenotypic differentiation of both strains from the other validated Chitinophaga species. Therefore, the two isolates represent two novel species, for which the name Chitinophaga soli sp. nov.(type strain, Gsoil $219^T=KCTC\;12650^T=DSM\;18093^T$) and Chitinophaga terrae sp. nov.(type strain, Gsoil $238^T=KCTC\;12651^T=DSM\;18078^T$) are proposed.

• Journal of Microbiology and Biotechnology
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• v.22 no.12
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• pp.1621-1628
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• 2012

The agar-degrading bacterium GNUM-1 was isolated from the brown algal species Sargassum serratifolium, which was obtained from the West Sea of Korea, by using the selective artificial seawater agar plate. The cells were Gram-negative, $0.5-0.6{\mu}m$ wide and $2.0-2.5{\mu}m$ long curved rods with a single polar flagellum, forming nonpigmented, circular, smooth colonies. Cells grew at $20^{\circ}C-37^{\circ}C$, between pH 5.0 and 9.0, and at 1-10% (w/v) NaCl. The DNA G+C content of the GNUM-1 strain was 45.5 mol%. The 16S rRNA sequence of the GNUM-1 was very similar to those of Alteromonas stellipolaris LMG 21861 (99.86% sequence homology) and Alteromonas addita $R10SW13^T$(99.64% sequence homology), which led us to assign it to the genus Alteromonas. It showed positive activities for agarase, amylase, gelatinase, alkaline phosphatase, esterase (C8), lipase (C14), leucine arylamidase, valine arylamidase, ${\alpha}$-chymotrypsin, acid phosphatase, naphthol-AS-BI-phosphohydrolase, ${\alpha}$-galactosidase, ${\beta}$-galactosidase, ${\beta}$-glucosidase, catalase, and urease. It can utilize citrate, malic acid, and trisodium citrate. The major fatty acids were summed feature 3 (21.5%, comprising $C_{16:1}{\omega}7c/iso-C_{15:0}$ 2-OH) and C16:0 (15.04%). On the basis of the variations in many biochemical characteristics, GNUM-1 was considered as unique and thus was named Alteromonas sp. GNUM-1. It produced the highest agarase activity in modified ASW medium containing 0.4% sucrose, but lower activity in rich media despite superior growth, implying that agarase production is tightly regulated and repressed in a rich nutrient condition. The 30 kDa protein with agarase activity was identified by zymography, and this report serves as the very first account of such a protein in the genus Alteromonas.

• Journal of the Korean institute of surface engineering
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• v.49 no.2
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• pp.152-158
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• 2016

We investigated the effect of capacitively coupled Ar plasma treatment on contact resistance ($R_c$) and channel sheet resistance ($R_{sh}$) of graphene field effect transistors (FETs), by varying their channel length in the wide range from 200 nm to $50{\mu}m$ which formed the transfer length method (TLM) patterns. When the Ar plasma treatment was performed on the long channel ($10{\sim}50{\mu}m$) graphene FETs for 20 s, $R_c$ decreased from 2.4 to $1.15k{\Omega}{\cdot}{\mu}m$. It is understood that this improvement in $R_c$ is attributed to the formation of $sp^3$ bonds and dangling bonds by the plasma. However, when the channel length of the FETs decreased down to 200 nm, the drain current ($I_d$) decreased upon the plasma treatment because of the significant increase of channel $R_{sh}$ which was attributed to the atomic structural disorder induced by the plasma across the transfer length at the edge of the channel region. This study suggests a practical guideline to reduce $R_c$ using various plasma treatments for the $R_c$ sensitive graphene and other 2D material devices, where $R_c$ is traded off with $R_{sh}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.548-551
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• 2000

Spinel phase LiF $e_{y}$M $n_{2-y}$ $O_4$samples are synthesized by calcining a LiOH.$H_2O$, Mn $O_2$and F $e_2$ $O_3$mixture at 80$0^{\circ}C$ for 36h in air. Preparing LiF $e_{y}$M $n_{2-y}$ $O_4$showed spinel phase with cubic phase. The ununiform distortion of the crystallite of the spinel LiF $e_{y}$M $n_{2-y}$ $O_4$was more stable than that of the pure. The discharge capacity of the cathode for the Li/LiF $e_{0.1}$M $n_{1.9}$ $O_4$cell at the first than that of the pure. The discharge capacity of the cathode for the Li/LiF $e_{0.1}$M $n_{1.9}$ $O_4$cell at the first cycle and at the 70th cycle was about 113 and 90mAh/g, respectively. This cell capacity was retained about 82% of the first cycle after 70th cycle. Impedance profile of this cell was more stable than that pure. The resistance, the capacitance and chemical diffusion coefficients of lithium ion showed approximately 80$\Omega$, 36133.87$\mu$F ; 1.4$\times$10$^{-8}$ c $m^2$ $s^{-1}$ , respectively. , respectively.ely.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.379-380
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• 2005

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.