• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.6-7
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• 2008

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450V power MOSFET devices by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}cm^{-3}$, size of $600{\mu}m^2$ with 4.5 $\Omega$, and off-state leakage current below 50 ${\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods is meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.81-81
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• 2008

Applications of CdS films in this study are to exhibit a high conductivity when they are exposed at light with visible wavelength and sequentially to show a low conductivity in dark state. For this purpose, CdS films should have a high photosensitivity, still maintaining a high conductivity at a visible light. In this study, CdS films were prepared at room temperature on glass substrates by rf magnetron sputtering. In order to increase the photo-conductivity in visible light, various defect levels should be located within the CdS band gap. In order to nucleate the defect sites within the CdS band gap, CdS films were deposited on glass substrates at room temperature using various $H_2$/(Ar+$H_2$) flow ratios by an rf magnetron sputtering. Through the investigation of the structural and photoconductive properties of CdS films by an addition of hydrogen, the relationship between photo- and dark-resistance in CdS films was investigated in detail. 200-nm-thick CdS films for photoconductive sensor applications were prepared at various $H_2$/(Ar+$H_2$) flow ratios on glass substrates at room temperature by rf magnetron sputtering. Sulfur concentration in CdS films crystallized at room temperature with (002) preferred orientation depends directly on the hydrogen atmosphere and the surface roughness of the films gradually increases with increasing hydrogen atmosphere. Films deposited at 8% of $H_2$/(Ar+$H_2$) exhibit an abrupt decrease of dark- and photo-resistance, showing a low photo-sensitivity ($R_{dark}/R_{photo}$). Onthe other hand, films deposited at a hydrogen atmosphere of 42% exhibit a photo-sensitivity of $5\times10^3$, maintaining a photo-resistance of an approximately $2\times10^4\Omega$/square. The dark- and photo-resistance values of CdS films were related with a composition, surface roughness, and defect sites within the band gap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.27-27
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• 2008

The different concentration Indium doped ZnO:Al films were grown on glass substrates (Corning 1737) at $200^{\circ}C$ by pulsed laser deposition. The indium doping in AZO films shows the critical effect on the crystallinity, resistivity, and optical properties of the films. The AZO films doped with 0.3 atom % indium content exhibit the highest crystallinity, the lowest resistivity of $4.5\times10^{-4}\Omega$-cm, and the maximum transmittance of 93%. The resistivity of the indium doped-AZO films is strongly related with the crystallinity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In an optical transmittance, the shift of the optical absorption edge to shorter wavelength strongly depends on the electronic carrier concentration in the films.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.769-775
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• 2016

Characteristics of a wireless sensor powered by the IDE (interdigitated electrode) embedded piezoelectric cantilever generator were analyzed in order to evaluate its potential for use in wireless sensor applications. The IDE embedded piezoelectric cantilever was designed and fabricated to have a self-resonance frequency of 126 Hz and acceleration of 1.57 G, respectively, for the mechanical resonance with a practical conveyor system in a thermal-power plant. It produced maximum output power of 2.81 mW under the resistive load of $160{\Omega}$ at 126 Hz. The wireless sensor module is electrically connected to a rectifier capacitor with capacity of 0.68 farad and 3.8 V for power supply by the piezoelectric cantilever generator. The unloaded capacitor could be charged as a rate of approximately $365{\mu}V/s$ while the capacitor exhibited that of 0.997 mV/min. during communication under low duty cycle of 0.2%. Therefore, it is considered that the fabricated IDE embedded piezoelectric cantilever generator can be used for wireless sensor applications.

• 대한조선학회논문집
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• 제29권3호
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• pp.53-58
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• 1992

파랑중(波浪中)에서 조종운동(操縱運動)을 하는 선박(船舶)에 있어, 실용적으로 선형(線形) 계산(計算)의 경우 파랑력(波浪力)을 단순한 정상(定常) 변동(變動) 외력(外力)으로 취급하는 수가 많다. 본 논문은 이와같은 경우에 있어서 파랑력에 의한 조종(操縱) 운동(運動)에 있어서의 Memory Effect를 조사하여, 이러한 실용 계산법(計算法)의 타당성(妥當性)을 논하였다. 그 결과를 요약하면 (1) $\omega_e$의 주파수(周波數)로 선체에 작용하는 정상(定常) 파랑력에 의한 Memory Effect도 거의 무시(無視)할 수 있다. (2) 따라서, 파랑중(波浪中)에서 조종 운동을 취급하는 경우, 간이 계산법으로서, 정수(靜水)중에서의 조타(操舵) 응답과 규칙파(規則波)중에서의 선체응답(船體應答)을 계산하여 이 둘을 합(合)하여도 무방하다. 그러나, 이상의 결론(結論)은 선형 운동에 국한(局限)된 것으로서, 실제의 조종 운동은 비선형성(非線形性)이 중요시(重要視)되므로 정상(定常) 파랑(波浪) 외력(外力)에 의한 Memory Effect를 좀더 엄밀(嚴密)하게 고찰(考察)하기 위해서는 비선형(非線形) Impulse Response Function을 구(求)하고 이를 이용하여 파랑력(波浪力)에 의한 Memory Effect를 평가(評價)하여야 할 것이다.

• 대한조선학회논문집
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• 제29권4호
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• pp.98-103
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• 1992

고정된 가이드 패널 뒤에 설치된 실제 형상의 3차원 제어판 모델이 균일유동 하에서 작동될 때, 제어판이 받는 토크의 정적 특성과 동적 특성에 대하여 풍동실험을 통해 연구하였다. 제어판이 가이드 패널에 의한 후류에서 작동되면 각도에 따른 토크의 증가는 적으며, 일정한 범위를 지나면 토크계수는 각도에 선형적으로 증가한다. 실험이 수행된 속도 범위 내에서는 토크계수는 속도에 따라서 변화가 거의 없었다. 토크계수가 영이 되는 중립각도의 크기가 영각에 따라서 증가하며, 영각의 절반 정도이다. 비정상 토크계수는 정상상태에 대하여 히스테리시스를 보이며, 풍속이 증가할수록 다소 커진다. 히스테리시스는 각속도가 증가할수록 증가하고, 각속도가 5.5rad/s 보다 적은(reduced frequency, $k={\omega}c/z\;V_0$의 값은 0.035) 경우에는 준정상 상태라고 할 수 있다.

• 대한조선학회논문집
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• 제51권1호
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• pp.1-7
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• 2014

The present study numerically investigated the effect of the advance ratio on the wake characteristics of the marine propeller in the propeller open water test. Therefore, a wide range of the advance ratio(0.2${\kappa}-{\omega}$SST Model are considered. The three-dimensional vortical structures of tip vortices are visualized by the swirl strength, resulting in fast decay of the tip vortices with increasing the advance ratio. Furthermore, to better understanding of the wake evolution, the contraction ratio of the slip stream for different advance ratios is extracted from the velocity fields. Consequently, the slip stream contraction ratio decreases with increasing the advance ratio and successively the difference of the slip stream contraction ratio between J=0.2 and J=0.8 is about 0.1R.

• 한국재료학회지
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• 제20권1호
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• 한국수소및신에너지학회논문집
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• 제26권5호
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• pp.416-422
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• 2015

Lithium Ion capacitor (LIC) is a new storage device which combines high power density and high energy density compared to conventional supercapacitors. LIC is capable of storing approximately 5.10 times more energy than conventional EDLCs and also have the benefits of high power and long cycle-life. In this study, LICs are assembled with activated carbon (AC) cathode and pre-doped graphite anode. Cathode material of natural graphite and artificial graphite kinds of MAGE-E3 was selected as the experiment proceeds. Super-P as a conductive agent and PTFE was used as binder, with the graphite: conductive agent: binder of 85: 10: 5 ratio of the negative electrode was prepared. Lithium doping condition of current density of $2mA/cm^2$ to $1mA/cm^2$, and was conducted by varying the doping. Results Analysis of Inductively Coupled Plasma Spectrometer (ICP) was used and a $1mA/cm^2$ current density, $2mA/cm^2$, when more than 1.5% of lithium ions was confirmed that contained. In addition, lithium ion doping to 0.005 V at 10, 20 and $30^{\circ}C$ temperature varying the voltage variation was confirmed, $20^{\circ}C$ cell from the low internal resistance of $4.9{\Omega}$ was confirmed.

• 한국유체기계학회 논문집
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• 제18권2호
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• pp.60-66
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• 2015

Conjugate heat transfer analysis was performed to investigate the flow and cooling performance of the high pressure turbine nozzle of gas turbine engine. The CHT code was verified by comparison between CFD results and experimental results of C3X vane. The combination of k-${\omega}$ based SST turbulence model and transition model was used to solve the flow and thermal field of the fluid zone and the material property of CMSX-4 was applied to the solid zone. The turbine nozzle has two internal cooling channels and each channel has a complex cooling configurations, such as the film cooling, jet impingement, pedestal and rib turbulator. The parabolic temperature profile was given to the inlet condition of the nozzle to simulate the combustor exit condition. The flow characteristics were analyzed by comparing with uncooled nozzle vane. The Mach number around the vane increased due to the increase of coolant mass flow flowed in the main flow passage. The maximum cooling effectiveness (91 %) at the vane surface is located in the middle of pressure side which is effected by the film cooling and the rib turbulrator. The region of the minimum cooling effectiveness (44.8 %) was positioned at the leading edge. And the results show that the TBC layer increases the average cooling effectiveness up to 18 %.