• Korean Journal of Materials Research
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• v.23 no.9
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• pp.517-524
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• 2013

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.238-243
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• 2014

This paper dealt with the measurement and analysis of partial discharge (PD) under high voltage direct current (HVDC) in SF6 gas. Electrode systems such as a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack on epoxy plate and a free particle (FP) were fabricated to simulate the insulation defects. The analysis system was designed with a Time-Frequency (T-F) map algorithm programed based on LabVIEW. This can arrange the acquired PD pulses into frequency and time domain. A HVDC power source is composed of a transformer (220 V/50 kV), a diode (100 kV) and a capacitor (50 kV, 0.5 ${\mu}F$). The gap between the electrodes is 3 mm, and the $SF_6$ gas was set at 5 bar. PD pulses were detected by a 50 ${\Omega}$ non-inductive resistor. In the analysis, PD pulses were distributed below 0.5 MHz and 20 ns ~ 35 ns for the POC, 0.7 MHz ~ 1.7 MHz, below 0.6 MHz and 10 ns ~ 40 ns and 60 ns ~125 ns for the POE, below 0.1 MHz and 135 ns ~ 215 ns for the crack, and below 1.6 MHz and 250 ns for the FP.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.472-477
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• 2013

This paper carried out the comparative analysis on ground impedance of a carbon block and a copper rod. Two types of grounding electrode were compared ; a carbon block (L : 1 m, ${\Phi}$ : 245 mm) buried at a depth of 0.8 m and a three-linked copper rod (L : 1 m, ${\Phi}$ : 10 mm) of equilateral triangles with 1 m spacing. Ground impedance depending on applied current source was evaluated by the application of a sine wave current with 60 Hz ~ 3.5 MHz, a fast-rise pulse with rising time of 200 ns, a standard lightning impulse of $8/20{\mu}s$ and a 600 Hz square wave. Ground impedance for both electrodes were almost the same value below 100 kHz, and increased rapidly afterwards. The maximum ground impedance appeared $400{\Omega}$ at around 1.5 MHz. Ground impedance of the carbon block was lower at the square wave and was higher at fast-rise pulse than that of the copper rod. Also, ground impedance as ages showed no difference for the last 8 months. From the results, it is likely that ground performance for both electrodes shows no difference against commercial frequency and lightning impulse current, while the copper rod shows better performance against a fast-rise pulse with rise-time of a few hundred ns.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1425_1426
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• 2009

In this study, commercially available polyethylene terephthalate(PET), which is widely used as a substrate of flexible electronic devices, was modified by dielectric barrier discharge(DBD) method in an air condition at atmospheric pressure, and aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET substrate by r. f. magnetron sputtering method. Surface analysis and characterization of the plasma-treated PET substrate was carried out using contact angle measurements, X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscopy (AFM). Especially the effect of surface state of PET substrate on some important properties of ZnO:Al transparent conducting film such as electrical and morphological properties and deposition rate of the film, was studied experimentally. The results showed that the contact angle of water on PET film was reduced significantly from $62^{\circ}$ to $43^{\circ}$ by DBD surface treatment at 20 min. of treatment time. The plasma treatment also improved the deposition rate and electrical properties. The deposition rate was increased almost linearly with surface treatment time. The lowest electrical resistivity as low as $4.97{\times}10^{-3}[\Omega-cm]$ and the highest deposition rate of 234[${\AA}m$/min] were obtained in ZnO:Al film with surface treatment time of 5min. and 20min., respectively.

• Biomolecules & Therapeutics
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• v.15 no.1
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• pp.65-72
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• 2007

Flax seed(Linseed, Linum usitatissimum L.) and its oil, a richest source of alpha-linolenic acid(ALA)(${\omega}-3$), contain saturated fatty acids, neurotoxic cyanogen glycosides and immuno-suppressive cyclic-nonapeptides. Present paper describes the development of two chemical processes, Process-A and -B, to remove saturated fatty acids and to destroy cyclic nonapeptides and cyanogen glycosides from flax seed oil. Process-A consists of three major steps, i.e., extraction of fatty acid mixture by alkaline saponification, removal of saturated fatty acid by urea-complexation, and triglyceride reconstruction of unsaturated fatty acid via fatty acyl-chloride activation using oxalyl chloride. Process-B consists of preparation of fatty acid ethyl ester by transesterification, elimination of saturated fatty acid ester by urea-complexation, and reconstruction of triglyceride by interesterification with glycerol-triacetate (triacetin). The destruction of lipophilic cyclic nonapeptide during saponification or transesterification processes could be demonstrated indirectly by the disappearance of antibacterial activity of bacitracin, an analogous cyclic-decapeptide. The cyanogen glycosides were found only in the dregs after hexane extraction, but not in the flax seed oil. The reconstructed triglyceride of flax seed oil, obtained by these two different pathways after elimination of saturated fatty acid and toxic components, showed agreeable properties as edible oil in terms of taste, acid value, iodine and peroxide value, glycerine content, and antioxidant activity.