• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.525-528
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• 2004

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.518-521
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• 2004

The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.145-147
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• 2000

The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

• Journal of Astronomy and Space Sciences
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• 제33권2호
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• pp.109-117
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• 2016

We explain the results of Yu et al. (2015b) of the novel sharpness angle measurement to a large number of spectra obtained from the Fermi gamma-ray burst monitor. The sharpness angle is compared to the values obtained from various representative emission models: blackbody, single-electron synchrotron, synchrotron emission from a Maxwellian or power-law electron distribution. It is found that more than 91% of the high temporally and spectrally resolved spectra are inconsistent with any kind of optically thin synchrotron emission model alone. It is also found that the limiting case, a single temperature Maxwellian synchrotron function, can only contribute up to 58⁺²³₋₁₈% of the peak flux. These results show that even the sharpest but non-realistic case, the single-electron synchrotron function, cannot explain a large fraction of the observed spectra. Since any combination of physically possible synchrotron spectra added together will always further broaden the spectrum, emission mechanisms other than optically thin synchrotron radiation are likely required in a full explanation of the spectral peaks or breaks of the GRB prompt emission phase.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.806-809
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• 2003

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

• 한국재료학회지
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• 제12권1호
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• pp.44-47
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• 2002

DV(Discrete Variation)-X${\alpha}$ cluster calculation was employed to calculate the electronic states of ${\gamma}'- Fe_4N$ which was one of iron nitride phases synthesized from plasma ion nitriding to improve surface hardness and wear resistance. The result of calculated electron density of states for Fe was similar to the result of band calculation. The cluster used for calculation of electronic states of ${\gamma}'-Fe_4N$ was based on $Fe_{14}N$ cluster which comprises 15 atoms. Finally the electronic states of ${\gamma}'- Fe_4N$ such as net-charge, band order, energy level, electron wave-function, and contour map for electron density were derived by the calculation.

• Journal of Photoscience
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• 제10권1호
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• pp.9-20
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• 2003

Recent studies on the photoreactivity of l,4-unsaturated systems have changed some ideas that were firmly established in this area of research for many years. Thus, we have described the first examples of 2-aza-di-$\pi$-methane (2-ADPM) rearrangements promoted by triplet-sensitization and by single electron transfer (SET) using electron-acceptor sensitizers. These reactions afford N-vinylaziridine and cyclopropylimine photoproducts in the first examples of di-$\pi$-methane processes that yield three-membered ring heterocycles. l-Aza-1,4-dienes also undergo SET-promoted l-aza-di-$\pi$-methane (l-ADPM) rearrangements via radical-cation intermediates using electron acceptor sensitizers. In some cases, alternative cyclizations yielding different carbocycles and heterocycles have been observed. The l-ADPM and di-$\pi$-methane (DPM) reactions also occur via radical-anion intermediates on irradiation using electron donor sensitizers. On the other hand, the photoreactivity reported for $\beta$,${\gamma}$-unsaturated aldehydes for many years was decarbonylation to the corresponding alkenes. However, our studies demonstrate that these compounds undergo the oxa-di-$\pi$-methane (ODPM) rearrangement with high chemical and quantum efficiency. A comparison of the photochemical reactivity of $\beta$,${\gamma}$-unsaturated aldehydes and corresponding methyl ketones has shown that the ketones do not undergo the ODPM rearrangement while the corresponding aldehydes are reactive by this pathway. Monosubstituted $\beta$,${\gamma}$-unsaturated aldehydes at C-2 undergo the ODPM rearrangement yielding the corresponding cyclopropane carbaldehydes diastereoselectively. Finally, we have described the first examples of reactions, similar to the well know Norrish Type I process, which take place in the triplet excited state of $\beta$,${\gamma}$-unsaturated carbonyl compounds by excitation of the C-C double bond instead of the carbonyl group.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• Journal of Radiation Protection and Research
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• 제39권2호
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• pp.81-88
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• 2014

최근, 인체 내 양성자 빔의 선량 분포를 검증하기 위해 새로운 개념의 영상기법인 감마 꼭지점 영상(gamma vertex imaging, GVI)이 제안되었다. GVI는 양성자 빔과 매질과의 핵반응으로 인해 발생하는 즉발감마선의 발생 위치를 결정하기 위해 입사한 감마선을 전자 변환기에서 전자로 변환한 후 전자의 궤적을 추적하는 방법을 사용한다. GVI 영상장치는 감마선을 전자로 변환하기 위한 전자 변환기, 전자 궤적을 추적하기 위한 2대의 양면 실리콘 스트립 검출기(double-sided silicon strip detector, DSSD)와 전자의 에너지 결정을 위한 섬광체 흡수부 검출기로 이루어진다. 본 연구에서는 GVI 영상 장치를 구성하는 DSSD 전용의 신호처리 장치를 구성하는 핵심 장치인 전하 민감형 전치증폭기(charge sensitive preamplifier, CSP) 모듈과 성형 증폭기 모듈을 개발하였으며, 상용 제품과 성능을 비교해 보았다. 감마선원의 에너지 스펙트럼 측정 결과, 자체제작 CSP 모듈이 상용 제품보다 에너지 분해능이 약간 낮은 것을 확인하였으며, 성형 증폭기의 경우 거의 동일한 성능을 보여주는 것을 확인할 수 있었다. 개발된 신호처리 장치의 노이즈의 크기를 나타내는 $V_{rms}$ 값은 6.48 keV으로 평가되었으며, 이는 145 ${\mu}m$의 DSSD에 전달되는 전자의 에너지( > ~51 keV)를 고려할 때 본 장치를 이용하여 전자의 궤적을 충분히 정확하게 결정할 수 있음을 확인할 수 있음을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.330-331
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• 2006

Recently, plasma display panels (PDPs) are highlighted for the flat type display device. Therefore, much attention has been paid to secondary electron emission coefficient of the electrode protective material of PDPs. As PDPs is developing, the concern about secondary electron emission coefficient ($\gamma$) which is related with PDPs electrode protection material is increasing continually. So the concern about the way to how to measure secondary electron emission coefficient is on the rise. At present, the way to how to measure secondary electron emission coefficient is developed by some research groups, which is giving some research part's advance help. In this research, we have studied how to measure secondary electron emission coefficient which is related with various thin films more conveniently than previous measurement method. We studied the method of measurement of secondary electron emission coefficient (${\gamma}$) of amorphous silicon films by using Paschen's curve.