• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2008년도 추계 학술발표회
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• pp.1427-1439
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• 2008

The quality of track-bed fills of railways has been controlled by field measurements of density (${\gamma}_d$) and the results of plate-load tests. The control measures are compatible with the design procedures whose design parameter is $k_{30}$ for both ordinary-speed railways and high-speed railways. However, one of fatal flaws of the design procedures is that there are no simple laboratory measurement procedures for the design parameters ($k_{30}$ or, $E_{v2}$ and $E_{v2}/E_{v1}$) in design stage. A new quality control procedure, in parallel with the advent of the new design procedure, is being proposed. This procedure is based upon P-wave velocity involving consistently the evaluation of design parameters in design stage and the field measurements during construction. The key concept of the procedure is that the target value for field compaction control is the P-wave velocity determined at OMC using modified compaction test, and direct-arrival method is used for the field measurements during construction. The procedure was verified at a test site and the p-wave velocity turned out to be an excellent control measure. The specifications for the control also include field compaction water content of $OMC{\pm}2%$ as well as the p-wave velocity.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.1103-1105
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• 2015

원전이나 방사선 관련시설에서의 사고발생 또는 노후원전 해체시 누출된 방사능은 조기에 탐지 및 제거해야 대형사고를 방지할 수 있다. 본 논문에서는 방사선원의 빠르고 효율적인 제염작업을 위해 방사선원에 대한 거리, 방향 및 선량정보를 제공할 수 있는 단센서 기반의 스테레오감마선 탐지장치를 구현하였고, 탐지장치의 고속탐지를 위한 알고리즘개발을 수행하였다. 선원에 대한 거리정보를 획득하기 위한 스테레오 구조를 위해 2대의 탐지장치가 필요하지만 장치의 운용을 위하여 단센서 기반의 경량화된 탐지장치를 고안하였고, 스테레오 영상 획득시 탐지시간을 최소화 하기 위하여 관심영역을 추출한 후 해당 영역에 대한 스캔을 통해 탐지 선원에 대한 거리산출 및 영상분포출력을 나타내도록 하였다. 스테레오 획득 시 탐지시간을 기준으로 적용된 알고리즘의 탐지시간은 최대 35%의 시간단축결과를 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.1005-1008
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• 2007

In this study, an architecture for 262K-color TFT-LCD source driver. In this paper proposed the chip consumes smaller area and static current which is suitable for QVGA resolutions. In the conventional structures, all of them need large number of OPAMP buffers to drive the pixels, Therefore, highly resistive R-DACs are needed to generate gamma voltages to reduce the static current. In this study, our design only used two OPAMPs and low resistance RDACs without increasing the quiescent current. Thus, it was experted that chip would be more in consuming lower static power for longer battery lifetime. The source driver were implemented by the 3.3 V $0.35\;{\mu}m$ CMOS technology provided by TSMC. The area of the core OPAMP circuit was about $110\;{\mu}m\;{\times}\;150\;{\mu}m$ and that of the source driver was $880\;{\mu}m\;{\times}\;430\;{\mu}m$. As compared to the conventional structure, approximately 64.48 % in area was achieved.

• Journal of Magnetics
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• 제15권4호
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• pp.179-184
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• 2010

We have investigated the effects of post annealing on iron oxide nanoparticles synthesized by the novel hydrothermal synthesis method with the $FeSO_4{\cdot}7H_2O$. To investigate the post annealing effect, the as-synthesized iron oxide nanoparticles were annealed at different temperatures in a vacuum chamber. The morphological, structural and magnetic properties of the iron oxide nanoparticles were investigated with high resolution X-ray powder diffraction (XRD), high resolution transmission electron microscopy (HRTEM), Mossbauer spectroscopy, and vibrating sample magnetometer analysis. According to the XRD and HRTEM analysis results, as-synthesized iron oxide nanoparticles were only magnetite ($Fe_3O_4$) phase with face-centered cubic structure but post annealed iron oxide nanoparticles at $700^{\circ}C$ were mainly magnetite phase with trivial maghemite ($\gamma-Fe_2O_3$) phase which was induced in the post annealing treatment. The crystallinity of the iron oxide nanoparticles is enhanced by the post annealing treatment. The particle size of the as-synthesized iron oxide nanoparticles was about 5 nm and the particle shape was almost spherical. But the particle size of the post annealed iron oxide nanoparticles at $700^{\circ}C$ was around 25 nm and the particle shape was spherical and irregular. The as-synthesized iron oxide nanoparticles showed superparamagnetic behavior, but post annealed iron oxide nanoparticles at $700^{\circ}C$ did not show superparamagnetic behavior due to the increase of particle size by post annealing treatment. The saturation of magnetization of the as-synthesized nanoparticles, post annealed nanoparticles at $500^{\circ}C$, and post annealed nanoparticles at $700^{\circ}C$ was found to be 3.7 emu/g, 6.1 emu/g, and 7.5 emu/g, respectively. The much smaller saturation magnetization value than one of bulk magnetite can be attributed to spin disorder and/or spin canting, spin pinning at the nanoparticle surface.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권1호
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• pp.66-77
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• 2010

Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.

• Journal of Ginseng Research
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• 제41권1호
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• pp.96-102
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• 2017

Background: Korean ginseng, Panax ginseng Meyer, has been used as a traditional oriental medicine to treat illness and promote health for several thousand years. Ginsenosides are the main constituents for the pharmacological effects of P. ginseng. Since several ginsenosides, including ginsenoside (G)-Rg3 and G-Rp1, have reported antiplatelet activity, here we investigate the ability of G-Rp4 to modulate adenosine diphosphate (ADP)-induced platelet aggregation. The ginsenoside Rp4, a similar chemical structure of G-Rp1, was prepared from G-Rg1 by chemical modification. Methods: To examine the effects of G-Rp4 on platelet activation, we performed several experiments, including antiplatelet ability, the modulation of intracellular calcium concentration, and P-selectin expression. In addition, we examined the activation of integrin ${\alpha}IIb{\beta}_3$ and the phosphorylation of signaling molecules using fibrinogen binding assay and immunoblotting in rat washed platelets. Results: G-Rp4 inhibited ADP-induced platelet aggregation in a dose-dependent manner. We found that G-Rp4 decreased calcium mobilization and P-selectin expression in ADP-activated platelets. Moreover, fibrinogen binding to integrin ${\alpha}IIb{\beta}_3$ by ADP was attenuated in G-Rp4-treated platelets. G-Rp4 significantly attenuated phosphorylation of extracellular signal-regulated protein kinases 1 and 2, p38, and c-Jun N-terminal kinase, as well as protein kinase B, phosphatidylinositol 3-kinase, and phospholipase C-${\gamma}$ phosphorylations. Conclusion: G-Rp4 significantly inhibited ADP-induced platelet aggregation and this is mediated via modulating the intracellular signaling molecules. These results indicate that G-Rp4 could be a potential candidate as a therapeutic agent against platelet-related cardiovascular diseases.

• 한국전자파학회논문지
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• 제15권1호
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• pp.44-50
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• 2004

본 논문에서는 FR4(h= 1.6 mm, $\varepsilon_{{\gamma}}$/=4.6) substrate 상에서 2 GHz 대역의 이중 평형 혼합기를 구현하였다. 일반적으로, DBM(Doubly Balanced Mixer)는 2개의 발룬과 쿼드 다이오드로 구성된다. 발룬을 위해, microstrip과 CPS(Coplanar Strip)을 이용한 새로운 발룬 회로가 제안되고, 설계되어졌다. 제안된 발룬의 측정 결과, 1.5 GHz에서 2.5 GHz내에서 위상의 불평형 정도가 180$^{\circ}$$\pm$ $1.5^{\circ}$이내였으며, 진폭의 불평형 정도가 $\pm$ 0.2 ㏈ 이내였다. 발룬을 사용한 DBM이 성공적으로 구현되었으며, 동작 대역 내에서 up/down 변환기로써 변환 손실은 약 6 ㏈ 정도를 보였다. 더 많은 연구를 통해, backside via를 포함하는 프로세스가 있는 MMIC(Monolithic Microwave Integrated Circuit) DBM에 적용 가능할 것이다.d Circuit) DBM에 적용 가능할 것이다.

• 대한의용생체공학회:의공학회지
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• 제18권3호
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• pp.307-313
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• 1997

비정질 실리콘에서의 photoconductive gain mechanism을 방사선 계측시 이용하기 위한 연구를 수행하였다. p-i-n, n-i-n, n-i-p-i-n과 같은 여러 형태의 비정질 실리콘 계측기를 제작하고 시험하였다. Photoconductive gain은 두 가지의 시간적 범위에서 측정하였다. : 하나는 고에너지의 하전입자나 감마선의 통과를 모사하기 위해서 $1{\mu }$ sec 보다 짧은 가시광선 펄스를 사용하였고, 다른 하나는 의학영상에 사용되는 x-선을 모사하기 위하여 보다 긴 1msec 정도의 가시광선 펄스를 사용하였다. 두 가지의 photoconductive gain-current gain과 charge gain-을 정의하여 실험하였으며, charge gain은 current gain을 시간에 따라 적분한 값이다. 10 mA/$cm^2$의 dark current density level에서, 짧은 펄스에 대해서는 3~9정도의 charge gain을 얻을 수 있었고 긴 펄스에 대해서는 수백의 charge gain을 얻을 수 있었다. 여러 가지의 gain에 대한 결과를 계측기의 구조, 부가전압, dark current density와의 관계를 통하여 논의하였다.

• Journal of Pharmaceutical Investigation
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• 제6권1호
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• pp.26-32
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• 1976

Dicalcium phosphate dihydrate (DCPD) is the most widely-used dentifrice abrasive in non-therapeutic tooth-paste requiring, low abrasive level, high stability and excellent compatibility with other formulation ingredients. One of the difficulties encountered in the use of this material in tooth-paste is that unless storage of the product is maintained at a relative low temperature there is a distinct tendency to lose water of crystallization. Another difficulty which has been encountered is that there is a tendency for the product to become lumpy. Various means have been proposed for increasing the stability and overcoming the lumping tendency, most of which means comprise the addition of stabilizing agent. But there is not any report about the relationships between the mechanism of dehydration, physical properties, structure and manufacturing condition. In this experiment, DCPD were manufactured by methods of Moss' patent, its two varied and J.P.VIII, these were studied by means of stability test, IR spectra, and DTA. According to the manufacturing conditions, DCPD has different physical properties and structures, i. e., monoclinic system of low drying temperature, triclinic system of high drying temperature. Dehydration of DCPD may be supposed one step debydration at about $100^{\circ}$ and it finaly converts to ${\gamma}-pyrophosphate$ at about $465^{\circ}$ and if the drying temperature is high it becomes DCP anhydrous. DCPD made by Moss' patent is thought of the best polishing agent of tooth-paste.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.