• Title/Summary/Keyword: ${\beta}$-phase crystal

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Electrical Conductivity Properties of the $a-In_{2}Se_{3}$ Single Crystal ($a-In_{2}Se_{3}$ 단결정의 전기전도도 특성 연구)

  • 김형곤;김남오;이우선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.8
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    • pp.629-633
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    • 2001
  • Electrical properties of the $\alpha$-In$_2$Se$_3$ single crystals grown by use of the Bridgman technique were examined in the transition temperature range between $\alpha$-phase and $\beta$-phase. $\alpha$-In$_2$Se$_3$ single crystal has ' the rhombohedral structure and lattice constants are a=4.025 $\AA$, c=28.771 $\AA$ in c-axis. The transition temperatures of the stoichiometric $\alpha$-In$_2$Se$_3$ single crystal is 198.8$^{\circ}C$ according to the specimens. The temperature of $\alpha$longrightarrow$\beta$ phase transition decreased but the temperature of $\beta$longrightarrow$\alpha$ phase transition increased as the number of heating-cooling cycle increased.

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Synthesis of iron disilicide single crystal by chemical vapour transport (기상성장법(CVT)에 의한 Iron disilicide단결정의 합성)

  • 이충효;홍대석;이상진;최종건;김판채
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.2
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    • pp.68-72
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    • 2002
  • The $\beta$-$FeSi_2$ and $\alpha$-$FeSi_2$ single crystals were synthesized by chemical vapour transport (CVT) using iodine as a transporting agent from the commercially available $FeSi_2$ powder. The $FeSi_2$ powder together with iodine were sealed in an evacuated quartz ampoule and the ampoule then being placed in two-zone electrical furnace for growing crystal. The CVT of $FeSi_2$ with iodine yielded $\beta$-$FeSi_2$ and $\alpha$-FeSi$_2$ single crystals at deposition temperature of 750 and $950^{\circ}C$ respectively. The source temperature was $1050^{\circ}C$ in both cases. The crystals of the $\alpha$-FeSi$_2$ phase were typically plate shaped with dimensions of about $10\times 10 \textrm{mm}^2$, whereas the crystals of orthorhombic $\beta$-$FeSi_2$ phase grew predominantly in the fonts of thin needle of about 10 mm in length. The composition of$\alpha$-FeSicrystal determined by electron probe microanalysis (EPMA) resulted in Si-rich $FeSi_{2.58}$ . 57. Furthermore, the CVT $\beta$-$FeSi_2$ crystal was found to be transformed to the high temperature $\alpha$-$FeSi_2$phase above $930^{\circ}C$.

Texture in hot-pressed silicon carbide (고온가압소결한 탄화규소의 집합조직)

  • 김영욱;김원중
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.4
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    • pp.343-350
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    • 1995
  • A Abstract Systematic studies of the effects of crystalline forms of starting powders and p processing variables on the texture of hot - pressed silicon carbide are described. The results I indicate that hot - pressing of $\beta$ - SiC can produce strong textures and composite type duplex microstructure due to the ${\beta} {\rightarrow} {\alpha}$ phase transformation of SiC. The texture variations d during post - annealing have been observed. In the case of using a - SiC as starting pow¬d ders, the degree of preferred orientation by hot - pressing is relatively weak.

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Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon (단결정 실리콘 제조용 석영유리도가니의 결정화에 대한 연구)

  • Lim, Jong Won;Kim, Tae Huei;Park, Kyung Bong
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.3
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    • pp.99-105
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    • 2018
  • In order to avoid un-uniform crystallization on the surface of a quartz glass crucible that is known to affect the production yield of the single crystal silicon, Ba (barium) was selected as a crystallization promotor and the inner surface of the crucible was coated using Ba (barium hydroxide octahydrate)-solution by the spray pyrolysis method. For un-coated crucible, it was found that the crystallization of its surface started at $1350^{\circ}C$, and at $1450^{\circ}C$ the surface was uniformly crystallized with ${\beta}$-cristobalite phase. It was found that the crucible coated with Ba began to be crystallized from $1000^{\circ}C$ and was uniformly crystallized on the crucible surface at $1300^{\circ}C$. In this case, ${\alpha}$-cristobalite and needle-shaped $BaSi_2O_5$ phase were created and disappeared as a crystal phase, and the ${\beta}$-cristobalite phase was eventually evenly distributed over the Ba-coated crucible surface.

Characterization of PVDF/PU fibers prepared by electrospinning

  • Rho, Jeongwon;Lee, Deuk Yong;Lee, Myung-Hyun;Kim, Bae-Yeon;Jeong, Heeseok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.1
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    • pp.1-8
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    • 2018
  • The 23 wt% polyvinylidene fluoride (PVDF)/15 wt% polyurethane (PU) fibers were electrospun using the conjugated nozzle at a flow rate of 1.0 mL/h and an electric field of 1 kV/cm. The formation of ${\beta}$ crystal phase in the PVDF and the PVDF/PU fibers was confirmed by Fourier transform infrared spectroscopy. After electrospinning, the asspun fibers were immersed in a boiling water and then dried at $100^{\circ}C$ in a convection oven to make a crimp phenomenon. The crimps with a diameter of $2.0{\pm}0.08{\mu}m$ were observed for the PVDF/PU fibers after hydrothermal treatment without sacrificing the extent of ${\beta}$ crystal phase. All the PU, PVDF and PVDF/PU fibers exhibited average cell viability of more than 98 %. The cell proliferation results suggested that L-929 cells adhered well to the PU, PVDF and PVDF/PU fibers and proliferated continuously with increasing time, indicating that the PVDF/PU fibers are highly applicable to the biomedical applications.

A Study of the Single Crystal Growth of $Ag_2S$ Mixed Conductor and it$s Characteristics (혼합 반도체 $Ag_2S$의 단결정 성장 및 특성에 관한 연구)

  • 김병국;신명균;윤종규
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.2 no.1
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    • pp.76-85
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    • 1992
  • ${\beta}-$Ag_2S$(high temperature phase) was grown by solid/vapour reaction growth based on solid -state electrochemisty. In S/V growth, one of the reactants, silver ion, is supplied to the growth surface through the solid $Ag_2S$ from one side and the other reactants, surfur, is transported in the phase of vapour from the other side. With the sufficient supply of S vapour, the growth rate increased as increasing $T_d$(decomposition temperature of $Ag_2S$) and ${\Delta}T$ between $T_d$ and $T_g$(temperature of growth surface). At low S vapour pressure, growth rate decreased with decreased vapour pressure and ${\beta}-$Ag_2S$ was grown in the form of whisker, when Ag+ion is sufficiently supplied. The measured values of electronic conductivity of ${\beta}-$Ag_2S$ showed that electronic conductivity of the poly crystal was larger than that of single crystal.

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Characteristic Change of PVDF-$SiO_2$ Composite Nanofibers with Different Thermal Treatment Temperature (열처리 온도에 따른 PVDF-$SiO_2$ 복합나노섬유의 특성 변화)

  • Kim, Young-Jin
    • Polymer(Korea)
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    • v.35 no.6
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    • pp.605-609
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    • 2011
  • Composite nanofibers were prepared by electrospinning and thermal treatment from poly (vinylidene fluoride) (PVDF)-$SiO_2$ blend solution. The nanofibers were stacked on layers to produce fully interconnected pores. TEM micrographs and EDX spectra confirmed the presence of $SiO_2$ in the composite nanofibers. The porosity of nanofibers was effectively enhanced by the introduction of electrospinning technique. ATR-FTIR and XRD results revealed that PVDF in the composite nanofibers exhibited the mixture crystal structure of ${\alpha}$-phase and ${\beta}$-phase. The crystal structure of ${\alpha}$-phase and crystallinity increased by the thermal treatment. In addition, the mechanical properties, thermal stability and hydrophobicity were markedly amplified by the thermal treatment.

Effect of powder phase during SiC single crystal growth (탄화규소 단결정 성장시 원료분말 상(Phase)의 영향)

  • Kim, Kwan-Mo;Seo, Soo-Hyung;Song, Joon-Suk;Oh, Myung-Hwan;Wang, Yen-Zen
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.214-217
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    • 2004
  • 숭화법을 이용한 탄화규소(Silicon carbide) 단결정 성장시 사용되는 원료의 상(phase)이 단결정 성장에 미치는 영향을 알아보기 위해 알파형 탄화규소 분말(${\alpha}-SiC$ powder)과 베타형 탄화규소 분말(${\beta}-SiC$ powder)을 각각 사용하였다. 알파형 탄화규소 분말을 사용한 경우에 단결정(single-crystal)을 성장할 수 있었으나, 베타형 탄화규소 분말을 사용하였을 때에는 다결정(poly-crystal)이 성장되었다. 다결정 형성요인에 관한 EPMA 분석결과, 베타형 탄화규소 분말의 탄소에 대한 실리콘의 원소조성비$(N_{Si}/N_C\;=\;1.57)$가 알파형 탄화규소 분말의 경우보다$(N_{Si}/N_C\;=\;0.81)$ 높음을 확인하였다. 따라서 흑연도가니(crucible) 내부의 실리콘 원자가 알파형 탄화규소 분말을 사용하는 경우보다 높은 과포화상태가 되어 종자정 표면에 미세한 실리콘 액적(droplet)이 중착되고 이것으로부터 일정하지 않은 방향성(random orientation)을 갖는 탄화규소 다결정(다양한 방향성을 갖는 다형 포함)이 성장한 것으로 실리콘과 탄소 원소에 대한 EPMA 지도(map) 결과를 통해 확인할 수 있었다.

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Preparation and Properties of Poly(vinylidene fluoride) Multilayer Films (Poly(vinylidene fluoride) 다층 필름의 제조 및 특성)

  • Son, Tae-Won;Kim, Jong-Hwan;Choi, Won-Mi;Han, Fei-Fei;Kwon, Oh-Kyeong
    • Polymer(Korea)
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    • v.35 no.2
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    • pp.130-135
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    • 2011
  • Along with the fast development of electronics, the demands of portable electronics and wireless sensors are growing rapidly. The need for self-powering materials capable of powering the electrical devices attached to them is increasing, The piezoelectric effect of polyvinylidene fluoride (PVDF) can be used for this purpose. PVDF has a special crystal structure consisting of a ${\beta}$-phase that can produce piezoelectricity. In this paper, multilayer PVDF films were fabricated to increase the ${\beta}$-phase content. A solution of 10% concentration N;N-dimethylacetamide (DMAc) in PVDF (PVDF/DMAc) was used to fabricate the films via spin coating technique with the following optimum process parameters: a spin rate of 850 rpm, spin time of 60 s, drying temperature of $60^{\circ}C$, and drying time of 30 min, Compared with single-layer PVDF films, the multilayer films exhibited higher ${\beta}$-phase content. The ${\beta}$-phase content of the films increased gradually with increasing number of layers until 4, Maximum ratio of ${\beta}$-phase content was 7.72.

Effect of SiC volume fraction on mechanical properties and microstructure of $Si_{3}N_{4}/SiC$ nanocomposites (SiC 부피분율이 $Si_{3}N_{4}/SiC$ 초미립복합재료의 기계적 특성과 미세구조에 미치는 영향)

  • 황광택;김창삼;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.3
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    • pp.386-391
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    • 1996
  • SiC particles (average size is 270 nm) of 0, 10, 20, 30, 40 vol% were dispersed in $Si_{3}N_{4}$, and $Si_{3}N_{4}/SiC$ nanocomposites were fabricated by hot press. After sintering, matrix phase, ${\alpha}-Si_{3}N_{4}$ was transformed to ${\beta}-Si_{3}N_{4}$, and second phase, ${\beta}-SiC$ was not changed. No grain boundary crystalline phase by adding of sintering additives was detected. Grain growth of $Si_{3}N_{4}$ was supressed with increasing of SiC contents, and then fine grain was occurred. The highest fracture strength was obtained at 10 vol% SiC, and fracture toughness was decreased, but hardness was linearly increased with SiC content.

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